BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon
MPN: BSP295H6327XTSA1 ✓ Hoạt độngBSP295H6327XTSA1 Tóm tắt
What is a small-signal N-channel MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device that uses an insulated gate to modulate current flow between drain and source. Small-signal/small-power MOSFETs sit in the discrete semiconductor hierarchy between digital transistors (used for logic-level switching) and high-power MOSFETs (used in motor drives and converters). The N-channel variant conducts when the gate is pulled above the source by the threshold voltage, offering low on-resistance and fast switching for loads up to a few amps.
Key features of the BSP295 include a maximum drain-source on-resistance RDS(on) of 300 mΩ, a logic-compatible gate threshold suitable for 4 V drive, and a single N-channel construction optimized for low-side switching. The SOT-223 package provides a drain-tab thermal pad that, when soldered to sufficient copper area, yields a junction-to-ambient thermal resistance suitable for the 1.8 W dissipation class.
The device is built on Infineon's planar cell process and qualified to AEC-Q101, making it suitable for load switching, level shifting, and DC-DC conversion in 12 V and 24 V automotive environments. Compared to bipolar transistors, it requires only a small gate charge for switching, reducing driver losses in PWM applications.
Typical applications include automotive relay replacement, LED driver low-side switches, high-side/Low-side buck converter switches in DC-DC modules, and general-purpose power management. The 60 V rating provides margin above 12 V and 24 V automotive transients.
When designing with this part, observe the SOA curve at high drain currents, since the 300 mΩ RDS(on) produces roughly 1 W at 1.8 A. Provide at least 6 cm² of copper on the drain tab for the rated 1.8 W dissipation, and add a gate-series resistor of 10-100 Ω to damp ringing.
This page synthesizes distributor pricing, drop-in equivalents in the same SOT-223 footprint, and practical design notes not assembled on any single distributor page.
Bộ thay thế dễ dàng lắp đặt cho BSP295H6327XTSA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSP295H6327XTSA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, FET Type, Operating Temperature Range, RoHS Status.
BSP297H6327XTSA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSL606SNH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSR315PH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSS214NWH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFL4315TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →VBJ1695
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSP295H6327XTSA1 Tỷ lệ tối đa & tính chất điện
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | 60 V |
| Continuous Drain Current (ID) at Ta=25 °C | 1.8 A |
| Power Dissipation (PD) at Ta=25 °C | 1.8 W |
| Drain-Source On-Resistance RDS(on) max | 300 mΩ |
| Hộp | PG-SOT223-4 (3 leads + tab) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55 °C to +150 °C |
| Qualification | AEC-Q101 (Automotive) |
| Trạng thái RoHS | Compliant |
| Tape and Reel Packing Code | H6327 (7-inch reel) |
| Channel Mode | Enhancement |
| Technology | Planar N-channel MOSFET |
| Drain Tab Connection | Pin 4 (tab) |
Cấu hình chân BSP295H6327XTSA1
| Chân 1 | Gate — Gate control input |
| Chân 2 | Drain — Drain (also connected to tab pin 4) |
| Chân 3 | Source — Source terminal |
| Chân 4 | Drain (Tab) — Drain thermal tab, internally connected to pin 2 |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSP295H6327XTSA1 phù hợp cho 6 Áp dụngs: Automotive Relay Replacement, LED Driver Low-Side Switch, DC-DC Converter Low-Side Switch, Level Shifter and Logic Translation, Battery Protection and Reverse-Polarity Blocking, Industrial 24 V Switching Module.
Automotive Relay Replacement
The BSP295H6327XTSA1 is purpose-built for replacing electromechanical relays in 12 V and 24 V automotive body-control and powertrain modules. Its 60 V VDS rating provides comfortable margin above the 12 V rail plus ISO 7637-2 load-dump transients (typically 35-40 V clamped), while 1.8 A continuous drain current handles small motors, lamp clusters up to ~21 W, and solenoid coils. AEC-Q101 qualification covers the temperature cycling, humidity, and vibration stresses of underhood and cabin environments. Designers replace noisy, bouncing relays with this MOSFET driven by a logic-level GPIO plus a 10-100 Ω gate resistor to limit ringing; a flyback diode is required for inductive loads. The SOT-223 tab solders to a small copper pour for the 1.8 W dissipation class.
Được đề xuất
LED Driver Low-Side Switch
For PWM dimming of automotive LED tail lamps, daytime running lights, and interior illumination strips, the BSP295H6327XTSA1 serves as a low-side switch driven by a microcontroller PWM output. Its 1.8 A continuous rating covers LED strings up to ~21 W at 12 V, and its enhancement-mode N-channel construction allows direct GPIO drive (with logic-level VGS(th) per the datasheet). The 300 mΩ RDS(on) keeps conduction losses under 0.3 W at full load, well within the 1.8 W package limit. The 60 V rating also protects against load-dump transients when the alternator is disconnected. Place a gate resistor to limit inrush current and a small RC snubber across drain-source if PWM edges cause ringing in the harness.
Được đề xuất
DC-DC Converter Low-Side Switch
In non-isolated buck converters and buck-boost topologies running from 12 V or 24 V supplies, the BSP295H6327XTSA1 functions as the low-side synchronous-rectifier or main-switch element in sub-2 A designs. Its 60 V VDS provides margin for 24 V industrial bus systems; the 300 mΩ RDS(on) at VGS=10 V keeps conduction losses manageable for sub-2 A outputs; and its small Qg enables fast switching at 100-500 kHz with low driver loss. The SOT-223 footprint is well suited to compact POL modules. For higher currents, parallel two devices or migrate to a larger DPAK-package Infineon OptiMOS part, but the BSP295 remains a cost-effective choice at the 1-2 A node.
Được đề xuất
Level Shifter and Logic Translation
The BSP295H6327XTSA1 makes an effective open-drain level shifter between low-voltage microcontrollers (3.3 V or 5 V GPIO) and higher-voltage loads or signal rails up to 60 V. Wire the source to the low-voltage ground, drain to the target rail through a pull-up resistor, and gate to the MCU GPIO. When the GPIO drives high (above VGS(th)), the MOSFET pulls the drain low; when the GPIO is low or floating, the pull-up restores the rail. This topology supports I2C bus extension, fault-line aggregation, and signal inversion without a dedicated level-shifter IC. The 1.8 A ID is more than sufficient for signal-level currents, and the small SOT-223 footprint fits dense logic boards.
Được đề xuất
Battery Protection and Reverse-Polarity Blocking
In portable or battery-powered equipment, the BSP295H6327XTSA1 wired as a high-side reverse-polarity protector (with a Zener driving the gate) blocks reverse-current paths if the battery is installed backwards. Its 60 V rating protects against transient overvoltage, the 300 mΩ RDS(on) limits voltage drop on the protected rail, and the small footprint fits inside battery compartments. For higher-current packs, parallel multiple devices on a shared copper pour. The Infineon datasheet confirms the device can sustain the inrush of capacitive loads found in many handheld designs, provided the gate is driven promptly on correct-polarity detection.
Được đề xuất
Industrial 24 V Switching Module
Industrial 24 V sensor, solenoid, and actuator switching benefits from the BSP295H6327XTSA1's 60 V VDS rating, which comfortably exceeds 24 V plus the IEC 61131-2 transient envelope. Its 1.8 A current class handles small solenoid valves, indicator lamps, and low-power relay coils commonly found in PLC discrete I/O modules and machine-control subsystems. The SOT-223 footprint and 1.8 W dissipation class keep the BOM small and the board compact, while AEC-Q101 qualification provides extra margin against industrial temperature and vibration stresses. Add a TVS diode across drain-source for outdoor installations subject to surge events.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSP295H6327XTSA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSP297H6327XTSA1 | BSL606SNH6327XTSA1 | BSR315PH6327XTSA1 | BSS214NWH6327XTSA1 | IRFL4315TRPBF | VBJ1695 |
|---|---|---|---|---|---|---|---|
| Package | PG-SOT223-4 | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi |
| Channel Type | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel | N-Channel |
Bảo phân biệt quan trọng
- AEC-Q101 qualified in SOT-223 footprint (vsVBJ1695)
- Established automotive track record (vsBSP297H6327XTSA1)
- N-channel polarity for low-side switching (vsBSR315PH6327XTSA1)
Ghi chú thiết kế
The BSP295H6327XTSA1 dissipates 1.8 W on the Infineon reference PCB (40×40×1.5 mm FR4 with 6 cm² copper on the drain tab). On smaller PCBs with less copper, the junction-to-ambient thermal resistance rises sharply and the dissipation must be derated. For production designs, provide at least 6 cm² of continuous copper on the drain tab and keep thermal vias under the tab to a 1 mm pitch to spread heat into inner layers. At maximum 1.8 A load with 300 mΩ RDS(on) the conduction loss is roughly 0.97 W, leaving margin for switching loss in PWM applications.
Use a gate-series resistor of 10-100 Ω placed close to the gate pin to damp the LC resonance formed by the gate capacitance and the package/trace inductance; this prevents ringing and false triggering on fast dv/dt transitions. Place a 10 kΩ gate-to-source pull-down resistor to keep the MOSFET off during MCU reset or floating GPIO states. If switching inductive loads, add a flyback diode or TVS across drain-source to clamp the turn-off spike within the 60 V VDS rating.
Do not assume the 60 V VDS rating covers all automotive transients: ISO 7637-2 load-dump pulses can exceed 35 V on 12 V systems and 60 V on 24 V systems before clamping; place an external TVS if the supply is not already clamped. The SOT-223 tab is internally connected to the drain (pin 2), so the drain tab MUST be soldered to a copper pour sized for thermal dissipation, not left floating - a floating tab reduces both thermal performance and PCB stability.
Keep the gate-trace short and away from drain-source switching nodes to minimize parasitic coupling that can cause dv/dt-induced turn-on. Place the source-sense connection (if Kelvin-source package is unavailable, use the source pin directly) close to the driver ground to avoid ground-bounce-induced VGS shifts. A small RC snubber (10 Ω + 1 nF) across drain-source can be added if the load is long-leaded and produces ringing on switch edges.
Thông tin tuân thủ
AEC-Q101 (automotive) qualified per Infineon BSP295 datasheet; halogen-free status not explicitly stated in the verified data - mark unknown.
