BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon
MPN: BSP295H6327XTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.63 | $0.63 |
| 10 | $0.55 | $5.50 |
| 100 | $0.46 | $46.00 |
| 500 | $0.4 | $200.00 |
| 1,000 | $0.35 | $350.00 |
BSP295H6327XTSA1 Overview
What is a small-signal N-channel MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device that uses an insulated gate to modulate current flow between drain and source. Small-signal/small-power MOSFETs sit in the discrete semiconductor hierarchy between digital transistors (used for logic-level switching) and high-power MOSFETs (used in motor drives and converters). The N-channel variant conducts when the gate is pulled above the source by the threshold voltage, offering low on-resistance and fast switching for loads up to a few amps.
Key features of the BSP295 include a maximum drain-source on-resistance RDS(on) of 300 mΩ, a logic-compatible gate threshold suitable for 4 V drive, and a single N-channel construction optimized for low-side switching. The SOT-223 package provides a drain-tab thermal pad that, when soldered to sufficient copper area, yields a junction-to-ambient thermal resistance suitable for the 1.8 W dissipation class.
The device is built on Infineon's planar cell process and qualified to AEC-Q101, making it suitable for load switching, level shifting, and DC-DC conversion in 12 V and 24 V automotive environments. Compared to bipolar transistors, it requires only a small gate charge for switching, reducing driver losses in PWM applications.
Typical applications include automotive relay replacement, LED driver low-side switches, high-side/Low-side buck converter switches in DC-DC modules, and general-purpose power management. The 60 V rating provides margin above 12 V and 24 V automotive transients.
When designing with this part, observe the SOA curve at high drain currents, since the 300 mΩ RDS(on) produces roughly 1 W at 1.8 A. Provide at least 6 cm² of copper on the drain tab for the rated 1.8 W dissipation, and add a gate-series resistor of 10-100 Ω to damp ringing.
This page synthesizes distributor pricing, drop-in equivalents in the same SOT-223 footprint, and practical design notes not assembled on any single distributor page.
Drop-in alternatives for BSP295H6327XTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSP295H6327XTSA1 (same form factor and footprint) — differing in Package, Technology, FET Type, Operating Temperature Range, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSP297H6327XTSA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSL606SNH6327XTSA1
✅ Drop-In✓ In Stock
$0.19 / Unit
View Datasheet →BSR315PH6327XTSA1
✅ Drop-In✓ In Stock
$0.22 / Unit
View Datasheet →BSS214NWH6327XTSA1
✅ Drop-In✓ In Stock
$0.15 / Unit
View Datasheet →IRFL4315TRPBF
✅ Drop-In✓ In Stock
$0.39 / Unit
View Datasheet →VBJ1695
✅ Drop-In📋 Reference alternative (not in catalog)
BSP295H6327XTSA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | 60 V |
| Continuous Drain Current (ID) at Ta=25 °C | 1.8 A |
| Power Dissipation (PD) at Ta=25 °C | 1.8 W |
| Drain-Source On-Resistance RDS(on) max | 300 mΩ |
| Package | PG-SOT223-4 (3 leads + tab) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 °C to +150 °C |
| Qualification | AEC-Q101 (Automotive) |
| RoHS Status | Compliant |
| Tape and Reel Packing Code | H6327 (7-inch reel) |
| Channel Mode | Enhancement |
| Technology | Planar N-channel MOSFET |
| Drain Tab Connection | Pin 4 (tab) |
BSP295H6327XTSA1 Pin Configuration
| Pin 1 | Gate — Gate control input |
| Pin 2 | Drain — Drain (also connected to tab pin 4) |
| Pin 3 | Source — Source terminal |
| Pin 4 | Drain (Tab) — Drain thermal tab, internally connected to pin 2 |
Safe Operating Area (DC)
Typical Applications
BSP295H6327XTSA1 is suitable for 6 applications: Automotive Relay Replacement, LED Driver Low-Side Switch, DC-DC Converter Low-Side Switch, Level Shifter and Logic Translation, Battery Protection and Reverse-Polarity Blocking, Industrial 24 V Switching Module.
Automotive Relay Replacement
The BSP295H6327XTSA1 is purpose-built for replacing electromechanical relays in 12 V and 24 V automotive body-control and powertrain modules. Its 60 V VDS rating provides comfortable margin above the 12 V rail plus ISO 7637-2 load-dump transients (typically 35-40 V clamped), while 1.8 A continuous drain current handles small motors, lamp clusters up to ~21 W, and solenoid coils. AEC-Q101 qualification covers the temperature cycling, humidity, and vibration stresses of underhood and cabin environments. Designers replace noisy, bouncing relays with this MOSFET driven by a logic-level GPIO plus a 10-100 Ω gate resistor to limit ringing; a flyback diode is required for inductive loads. The SOT-223 tab solders to a small copper pour for the 1.8 W dissipation class.
Recommended
LED Driver Low-Side Switch
For PWM dimming of automotive LED tail lamps, daytime running lights, and interior illumination strips, the BSP295H6327XTSA1 serves as a low-side switch driven by a microcontroller PWM output. Its 1.8 A continuous rating covers LED strings up to ~21 W at 12 V, and its enhancement-mode N-channel construction allows direct GPIO drive (with logic-level VGS(th) per the datasheet). The 300 mΩ RDS(on) keeps conduction losses under 0.3 W at full load, well within the 1.8 W package limit. The 60 V rating also protects against load-dump transients when the alternator is disconnected. Place a gate resistor to limit inrush current and a small RC snubber across drain-source if PWM edges cause ringing in the harness.
Recommended
DC-DC Converter Low-Side Switch
In non-isolated buck converters and buck-boost topologies running from 12 V or 24 V supplies, the BSP295H6327XTSA1 functions as the low-side synchronous-rectifier or main-switch element in sub-2 A designs. Its 60 V VDS provides margin for 24 V industrial bus systems; the 300 mΩ RDS(on) at VGS=10 V keeps conduction losses manageable for sub-2 A outputs; and its small Qg enables fast switching at 100-500 kHz with low driver loss. The SOT-223 footprint is well suited to compact POL modules. For higher currents, parallel two devices or migrate to a larger DPAK-package Infineon OptiMOS part, but the BSP295 remains a cost-effective choice at the 1-2 A node.
Recommended
Level Shifter and Logic Translation
The BSP295H6327XTSA1 makes an effective open-drain level shifter between low-voltage microcontrollers (3.3 V or 5 V GPIO) and higher-voltage loads or signal rails up to 60 V. Wire the source to the low-voltage ground, drain to the target rail through a pull-up resistor, and gate to the MCU GPIO. When the GPIO drives high (above VGS(th)), the MOSFET pulls the drain low; when the GPIO is low or floating, the pull-up restores the rail. This topology supports I2C bus extension, fault-line aggregation, and signal inversion without a dedicated level-shifter IC. The 1.8 A ID is more than sufficient for signal-level currents, and the small SOT-223 footprint fits dense logic boards.
Recommended
Battery Protection and Reverse-Polarity Blocking
In portable or battery-powered equipment, the BSP295H6327XTSA1 wired as a high-side reverse-polarity protector (with a Zener driving the gate) blocks reverse-current paths if the battery is installed backwards. Its 60 V rating protects against transient overvoltage, the 300 mΩ RDS(on) limits voltage drop on the protected rail, and the small footprint fits inside battery compartments. For higher-current packs, parallel multiple devices on a shared copper pour. The Infineon datasheet confirms the device can sustain the inrush of capacitive loads found in many handheld designs, provided the gate is driven promptly on correct-polarity detection.
Recommended
Industrial 24 V Switching Module
Industrial 24 V sensor, solenoid, and actuator switching benefits from the BSP295H6327XTSA1's 60 V VDS rating, which comfortably exceeds 24 V plus the IEC 61131-2 transient envelope. Its 1.8 A current class handles small solenoid valves, indicator lamps, and low-power relay coils commonly found in PLC discrete I/O modules and machine-control subsystems. The SOT-223 footprint and 1.8 W dissipation class keep the BOM small and the board compact, while AEC-Q101 qualification provides extra margin against industrial temperature and vibration stresses. Add a TVS diode across drain-source for outdoor installations subject to surge events.
Recommended
Recommended Products Summary
Engineering reference data for BSP295H6327XTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSP297H6327XTSA1 | BSL606SNH6327XTSA1 | BSR315PH6327XTSA1 | BSS214NWH6327XTSA1 | IRFL4315TRPBF | VBJ1695 |
|---|---|---|---|---|---|---|---|
| Package | PG-SOT223-4 | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi |
| Channel Type | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel | N-Channel |
Key Differentiators
- AEC-Q101 qualified in SOT-223 footprint (vs VBJ1695)
- Established automotive track record (vs BSP297H6327XTSA1)
- N-channel polarity for low-side switching (vs BSR315PH6327XTSA1)
Design Notes
The BSP295H6327XTSA1 dissipates 1.8 W on the Infineon reference PCB (40×40×1.5 mm FR4 with 6 cm² copper on the drain tab). On smaller PCBs with less copper, the junction-to-ambient thermal resistance rises sharply and the dissipation must be derated. For production designs, provide at least 6 cm² of continuous copper on the drain tab and keep thermal vias under the tab to a 1 mm pitch to spread heat into inner layers. At maximum 1.8 A load with 300 mΩ RDS(on) the conduction loss is roughly 0.97 W, leaving margin for switching loss in PWM applications.
Use a gate-series resistor of 10-100 Ω placed close to the gate pin to damp the LC resonance formed by the gate capacitance and the package/trace inductance; this prevents ringing and false triggering on fast dv/dt transitions. Place a 10 kΩ gate-to-source pull-down resistor to keep the MOSFET off during MCU reset or floating GPIO states. If switching inductive loads, add a flyback diode or TVS across drain-source to clamp the turn-off spike within the 60 V VDS rating.
Do not assume the 60 V VDS rating covers all automotive transients: ISO 7637-2 load-dump pulses can exceed 35 V on 12 V systems and 60 V on 24 V systems before clamping; place an external TVS if the supply is not already clamped. The SOT-223 tab is internally connected to the drain (pin 2), so the drain tab MUST be soldered to a copper pour sized for thermal dissipation, not left floating - a floating tab reduces both thermal performance and PCB stability.
Keep the gate-trace short and away from drain-source switching nodes to minimize parasitic coupling that can cause dv/dt-induced turn-on. Place the source-sense connection (if Kelvin-source package is unavailable, use the source pin directly) close to the driver ground to avoid ground-bounce-induced VGS shifts. A small RC snubber (10 Ω + 1 nF) across drain-source can be added if the load is long-leaded and produces ringing on switch edges.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon BSP295 datasheet; halogen-free status not explicitly stated in the verified data - mark unknown.
