BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
MPN: BSZ100N03MSGATMA1 ✓ Hoạt độngBSZ100N03MSGATMA1 Tóm tắt
A power MOSFET is the fundamental switching element in modern switch-mode power supplies (SMPS); in SMPS taxonomy, it sits under synchronous rectifier -> power MOSFET -> discrete semiconductor -> power management IC. The OptiMOS family is specifically engineered for low-voltage, high-frequency step-down converters where conduction loss, switching loss and figure-of-merit (FOM = RDS(on) x Qg) dominate system efficiency. The BSZ100N03MS uses trench MOSFET technology, which reduces cell pitch and on-resistance per unit silicon area.
Key features include a typical RDS(on) in the single-digit milliohm range at VGS=10 V, low gate charge Qg for fast switching transitions, integrated body diode for synchronous-rectifier operation, and 100% avalanche-tested ruggedness per JEDEC target-application qualification. Pb-free plating, halogen-free molding compound per IEC 61249-2-21, and RoHS compliance make it suitable for environmentally restricted designs.
The device is qualified to JEDEC standards for target applications, supports superior thermal resistance through its exposed-die TSDSON pad, and is rated for 2.1 W power dissipation at TA and 30 W at TC, enabling compact high-density layouts. Compared to standard MOSFETs, the low FOM enables higher switching frequencies (multi-MHz operation), reducing the size of inductors and output capacitors in the surrounding converter.
Typical applications include high-efficiency synchronous buck converters in servers, datacom/telecom point-of-load (POL) regulators, notebook voltage rails, USB-PD and DC-DC modules, and motor-drive low-side switches. In SMPS designs, two BSZ100N03MS devices typically form a half-bridge: one as the high-side control FET and one as the low-side synchronous rectifier.
When designing with this part, place it on a substantial copper pour (typically >6 cm² drain area on FR4) to achieve the rated thermal performance, keep the gate-drive loop compact to minimize switching loss, and ensure VGS does not exceed the ±20 V absolute maximum. Avoid body-diode conduction under continuous high dV/dt, as this can trigger unwanted turn-on in the high-side FET.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical layout/thermal design notes that are not collated in the manufacturer datasheet alone, providing distinct value for engineers selecting a 30 V N-channel MOSFET in TSDSON-8.
Bộ thay thế dễ dàng lắp đặt cho BSZ100N03MSGATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSZ100N03MSGATMA1 (cùng hình factor và footprint) — khác nhau ở Configuration, MSL Level, Package, Technology, FET Type.
BSZ100N03MS
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC076N04NDATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC050N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC60N04S6L030HATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →NTMFS4984N
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FDMS3660S
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSZ100N03MSGATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V |
| Kiểu transitor | N-Channel MOSFET |
| Configuration | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA | 10 A |
| Continuous Drain Current (ID) at TC | 40 A |
| Power Dissipation (PD) at TA | 2.1 W |
| Power Dissipation (PD) at TC | 30 W |
| Technology | Trench MOSFET (OptiMOS) |
| Kiểu lắp đặt | Surface Mount |
| Hộp | PG-TSDSON-8 (5x6 mm) |
| Terminal Finish | Tin (Pb-free) |
| Khoảng nhiệt độ hoạt động | -55C to +150C (junction) |
| Qualification | JEDEC - target application qualified |
| Avalanche Tested | 100% (per JEDEC) |
| RoHS Compliance | Compliant (Pb-free plating) |
| Đông trùng haogen | Yes (per IEC 61249-2-21) |
| Cấp MSL | MSL1 (per JEDEC J-STD-020) |
Cấu hình chân BSZ100N03MSGATMA1
| Chân 1 | G — Gate - gate drive input |
| Chân 2 | S — Source - low-side return path |
| Chân 3 | S — Source - low-side return path |
| Chân 4 | S — Source - low-side return path |
| Chân 5 | S — Source - low-side return path |
| Chân 6 | S — Source - low-side return path |
| Chân 7 | D — Drain - high-voltage switching node |
| Chân 8 | D — Drain - high-voltage switching node |
Ứng dụng tiêu biểu
BSZ100N03MSGATMA1 phù hợp cho 6 Áp dụngs: Synchronous Buck Converter (Server POL), Notebook Voltage Regulator (5V Gate Drive), USB-PD and DC-DC Module, Motor Drive Low-Side Switch, Hot-Swap / eFuse Switch (Low-Side), Battery Management System (1S-3S Li-ion Protection).
Synchronous Buck Converter (Server POL)
The BSZ100N03MSGATMA1 is purpose-built for synchronous buck converters in 12 V input server and datacom point-of-load (POL) regulators. Its 30 V VDS provides ample headroom for 12 V bus transients, while the OptiMOS low FOM (Qg x RDS(on)) enables switching frequencies above 500 kHz, shrinking output inductors and capacitors. Two BSZ100N03MSGATMA1 devices form the half-bridge - one high-side control FET and one low-side synchronous rectifier - delivering 95%+ efficiency at 20-40 A loads typical of CPU/GPU core rails.
Được đề xuất
Notebook Voltage Regulator (5V Gate Drive)
Optimized for 5 V gate-drive notebook and ultrabook voltage rails, the BSZ100N03MSGATMA1 delivers the low on-state resistance and minimal gate charge required by 1S-3 MHz buck regulators on the main system bus. In a typical 19 V to 5 V/3.3 V notebook POL, it operates as the low-side synchronous rectifier, reducing conduction loss and improving light-load efficiency when paired with Infineon's OptiMOS high-side FET. The PG-TSDSON-8 footprint enables compact layouts beneath BGA CPU packages.
Được đề xuất
USB-PD and DC-DC Module
The BSZ100N03MSGATMA1 is well-suited for USB-Power-Delivery (USB-PD 3.1) and standalone DC-DC modules operating from 5 V, 9 V, 12 V, or 20 V input buses. Its 30 V VDS tolerates USB-PD 28 V extended-power transients with adequate margin, while the 40 A TC current rating supports 100 W class output power levels (20 V/5 A). The TSDSON-8 (5x6 mm) footprint allows integration into small-form-factor GaN-replacement modules and compact adapter designs.
Được đề xuất
Motor Drive Low-Side Switch
For low-side switching in brushed DC and stepper motor driver stages up to 24 V, the BSZ100N03MSGATMA1 provides 40 A peak handling and avalanche-rated robustness for the inductive kick during PWM chopping. The integrated body diode supports slow-decay current recirculation in H-bridge configurations. For 3-phase BLDC drives, two or three BSZ100N03MSGATMA1 form the lower half of the inverter bridge, with matched upper-half FETs from the same OptiMOS family.
Được đề xuất
Hot-Swap / eFuse Switch (Low-Side)
In low-side hot-swap and electronic-fuse (eFuse) circuits for 12 V server backplanes and battery-protected loads, the BSZ100N03MSGATMA1 acts as the disconnect switch, with its avalanche-tested 30 V VDS handling inrush transients during card insertion. The exposed-drain TSDSON-8 pad enables high-current-density thermal management on FR4 with appropriate copper. Pair with a hot-swap controller such as the BTS51202EKAXUMA1 or TPS259x for SOA protection and current-limit foldback.
Được đề xuất
Battery Management System (1S-3S Li-ion Protection)
The BSZ100N03MSGATMA1 functions as a low-side protection FET in 1S-3S Li-ion battery management systems, where the 30 V VDS tolerates the 12.6 V maximum charge voltage of a 3S pack plus transient spikes. Its low RDS(on) minimizes voltage drop during high-current discharge (notebook, power-tool, e-bike applications), improving runtime and reducing thermal dissipation. The halogen-free, RoHS-compliant packaging aligns with IEC 62133 and UN 38.3 transportation requirements.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSZ100N03MSGATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSZ100N03MS | BSC076N04NDATMA1 | BSC050N04LSGATMA1 | NTMFS4984N | FDMS3660S |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | onsemi |
| Package | PG-TSDSON-8 (5x6 mm) | PG-TSDSON-8 (5x6 mm) - same | PG-TSDSON-8 (5x6 mm) - same | PG-TSDSON-8 (5x6 mm) - same | SO-8FL / TSDSON-equivalent (5x6 mm) - same | Power 56 (5x6 mm) - same |
| VDS (max) | 30 V | 30 V | 40 V | 40 V | 30 V | 30 V |
| Technology | OptiMOS 25V/30V (Trench) | OptiMOS 25V/30V (Trench) | OptiMOS (Trench) | OptiMOS (Trench) | onsemi N-ch trench | onsemi PowerTrench |
| Optimized Gate Drive | 5 V | 5 V | 10 V (full enhancement at 10V) | 10 V | 10 V | 10 V |
| Target Application | Server POL, Notebook, VGA | Server POL, Notebook, VGA | Server POL, 24V bus | Server POL, higher current | Synchronous rectification | Synchronous rectification, OR-ing |
Bảo phân biệt quan trọng
- Optimized for 5V gate drive with industry-leading FOM (vsBSC076N04NDATMA1 (40V Infineon OptiMOS))
- 30V VDS optimized for 12V and 19V bus rails (vsBSC076N04NDATMA1 (40V OptiMOS))
- Cross-brand equivalent available with same footprint (vsonsemi FDMS3660S)
Ghi chú thiết kế
The PG-TSDSON-8 (5x6 mm) package achieves its rated 30 W PD at TC by using the exposed drain pad as the primary thermal path. Per the Infineon datasheet, the device is characterized on a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm² (one layer, 70 um thick) copper area for drain connection - replicate this footprint in your design to achieve the rated thermal resistance. For higher dissipation, increase the drain copper area to 10+ cm² or add thermal vias to internal planes.
Place the BSZ100N03MSGATMA1 directly adjacent to the synchronous-rectifier position with the gate-drive loop (gate driver output -> MOSFET gate -> MOSFET source -> gate driver ground return) kept under 5 mm total loop length. Minimize the high dV/dt switching-node copper area to reduce EMI and gate-charge coupling. Use a kelvin source connection if available in the package variant, or route the gate-drive return separately from the power source return to avoid source-inductance-induced turn-on.
Do not exceed VGS absolute maximum of ±20 V (verify in datasheet Table 1); use a gate-drive voltage clamp or Zener protection if the driver can overshoot. The body diode has a limited reverse-recovery charge - in hard-switching topologies, ensure dead-time is < 50 ns to minimize body-diode conduction and prevent shoot-through. Verify avalanche energy rating during abnormal switching events (load-dump, output short); 100% avalanche testing per JEDEC provides margin but does not guarantee survival under all fault conditions.
For a 4-layer PCB stack-up (typical of server and datacom designs), place a continuous ground plane on layer 2 directly beneath the MOSFET to provide a low-impedance thermal path and to shield the gate-drive traces from the switching node. Stitch the drain copper to multiple vias connecting to internal power planes for improved thermal spreading. Avoid routing sensitive analog signals (feedback, current-sense) directly beneath the switching node to prevent capacitive coupling.
Thông tin tuân thủ
Pb-free plating (tin terminal finish), halogen-free per IEC 61249-2-21. Qualified to JEDEC target-application standards. Not AEC-Q100 qualified; for automotive applications, select an Infineon OptiMOS part with explicit AEC-Q100 qualification.
