BSZ120P03NS3GATMA1 - -30V P-Ch 12mOhm OptiMOS P3 MOSFET | Infineon
MPN: BSZ120P03NS3GATMA1 ✓ Hoạt độngBSZ120P03NS3GATMA1 Tóm tắt
A P-channel MOSFET is a metal-oxide-semiconductor field-effect transistor in which the body and drain are formed in an n-well, and conduction is by holes rather than electrons. P-channel parts simplify high-side switching because the device can be placed between the load and ground, allowing direct gate drive from logic-level signals without a charge pump in many topologies. This places P-channel MOSFETs in the hierarchy: MOSFET -> discrete semiconductor -> power switch -> power management.
Key features include 12 mOhm maximum RDS(on) at VGS=-10 V, fast switching performance optimized by the OptiMOS P3 generation, low gate charge (Qg) for reduced driver loss, and an integrated ESD-protected gate structure. The 3.3 x 3.3 mm PQFN package has a small thermal pad that delivers low RthJA, allowing the part to dissipate 2.1 W on a standard 1-inch copper pad with adequate airflow, and 52 W on the die itself at Tc=25C.
In application, the BSZ120P03NS3GATMA1 is typically used as a high-side load switch between a 5 V, 12 V or up to 24 V supply rail and the load, with a logic-level gate drive between 0 V and VCC. Its P-channel polarity eliminates the need for a bootstrap supply in many half-bridge and reverse-polarity protection circuits. Designers must respect SOA curves at low VDS, where silicon P-channels are inherently less rugged than N-channel counterparts.
Typical applications include USB VBUS load switching, battery charging and power-path management, reverse-polarity protection in industrial and automotive subsystems, hot-swap controllers, motor and solenoid drivers, and LED matrix drivers. The wide VDS range and low gate charge also make it suitable for OR-ing diodes in redundant power systems.
When designing with this device, ensure the VGS drive rail comfortably exceeds the VGS(th) (typ. -1.7 V) under worst-case cold conditions; at room temp a -3.3 V GPIO can fully enhance the part. Use a 10 kohm gate-source resistor to prevent unintended turn-on during transients, and respect SOA at low VDS for inductive loads.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS P3 family and qualified cross-brand substitutes, and practical thermal/layout design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho BSZ120P03NS3GATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSZ120P03NS3GATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS).
BSO120P03NS3G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSZ0901NSIATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSZ120P03NS3GATMA1-Q1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC050N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NTTFS4C02NTAG
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SiSA04DN
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSZ120P03NS3GATMA1 Tỷ lệ tối đa & tính chất điện
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (TA=25C) | -11 A |
| Continuous Drain Current (TC=25C) | -40 A |
| Power Dissipation (TA=25C) | 2.1 W |
| Power Dissipation (TC=25C) | 52 W |
| On-Resistance RDS(on) max @ VGS=-10V | 12 mOhm |
| Gate-Source Voltage (VGS) | +/-20 V |
| Gate Threshold Voltage VGS(th) typ | -1.7 V |
| Technology | OptiMOS P3 |
| Hộp | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Khoảng nhiệt độ hoạt động | -55C to +150C |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân BSZ120P03NS3GATMA1
| Chân 1 | G — Gate |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | D — Drain (connected internally to thermal pad) |
| Chân 5 | S — Source |
| Chân 6 | S — Source |
| Chân 7 | S — Source |
| Chân 8 | S — Source |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSZ120P03NS3GATMA1 phù hợp cho 6 Áp dụngs: USB VBUS Load Switch, Battery Power-Path Management, Reverse-Polarity Protection, Hot-Swap / In-Rush Control, Solenoid and Relay Driver (Low-Side Equivalent), LED Matrix and Backlight Driver.
USB VBUS Load Switch
The BSZ120P03NS3GATMA1 is ideal for USB VBUS load switching from 5 V up to 20 V USB-PD rails. Its P-channel topology enables direct GPIO drive without a charge pump, and the 12 mOhm RDS(on) drops only 60 mV at 5 A, preserving the 5 V rail within USB-IF tolerance. The 30 V VDS rating provides 50% margin over 20 V USB-PD, and the small 3.3 x 3.3 mm TSDSON-8 footprint fits compact Type-C dongles. Compared to a discrete Schottky OR-ing solution, this MOSFET cuts conduction loss by 80% and supports 5 A continuous without thermal derating. Pair it with a 10 kohm gate pull-down and TVS for full USB-IF compliance.
Được đề xuất
Battery Power-Path Management
In single-cell Li-ion or multi-cell NiMH power-path designs, the BSZ120P03NS3GATMA1 serves as a high-side reverse-polarity and load-disconnect switch. With VDS=-30 V it tolerates 12 V wall-adapter transients, and at 11 A continuous it can drive 2-3 A battery packs directly with negligible RDS(on) loss. The OptiMOS P3 process provides low Qg for sub-microsecond turn-off, critical during short-circuit protection events. The part's -1.7 V typical VGS(th) means a 3.3 V GPIO can fully enhance the channel, eliminating the level-shifter needed for N-channel parts. Designers should add a Schottky freewheeling diode across the load for inductive battery packs.
Được đề xuất
Reverse-Polarity Protection
The BSZ120P03NS3GATMA1 makes an excellent reverse-polarity protection (RPP) switch for industrial 24 V buses, automotive 12 V subsystems, and PoE applications. Wired source-to-battery and drain-to-load, the intrinsic body diode conducts during startup; once VGS is biased negative the channel enhances and conduction loss drops to I^2 x 12 mOhm. Compared to a Schottky diode RPP (which wastes 0.3-0.5 V), this MOSFET cuts dissipation by 95% and improves overall system efficiency. The part's 30 V VDS comfortably exceeds 24 V industrial transients, and its -55C to +150C operating range suits outdoor deployments.
Được đề xuất
Hot-Swap / In-Rush Control
For hot-swap and in-rush current limiting in distributed power systems, the BSZ120P03NS3GATMA1 can be PWM-driven with a hot-swap controller to softly ramp up load capacitance. Its 12 mOhm RDS(on) minimizes steady-state loss, and the small TSDSON-8 footprint allows placement right at the connector. The -1.7 V VGS(th) provides clean turn-on at low duty cycles, and the OptiMOS P3 SOA at low VDS is robust enough to survive brief short-circuit events when paired with a controller like the LTC4217 or ADM1171. Compared to using a higher-RDS N-channel part with a charge pump, this P-channel solution reduces BOM cost and board area.
Được đề xuất
Solenoid and Relay Driver (Low-Side Equivalent)
While typically used as a high-side switch, the BSZ120P03NS3GATMA1 can also serve as a low-side solenoid or relay driver when paired with a logic-level gate drive. Its 11 A continuous current easily drives 5 A automotive relays and most industrial solenoid valves. The P-channel polarity simplifies wiring in chassis-grounded systems where the load returns to battery negative. The 30 V VDS handles inductive flyback when paired with a flyback diode, and the 2.1 W power rating on 1-inch copper allows 8 A pulsed operation without additional heatsinking. Compared to bipolar Darlington drivers, this MOSFET eliminates the 1.5 V VCE(sat) loss.
Được đề xuất
LED Matrix and Backlight Driver
The BSZ120P03NS3GATMA1 can PWM-drive multi-channel LED matrices and backlight strings from 5 V to 24 V supplies. With a switching frequency up to 1 MHz, the MOSFET's low Qg (~30 nC typical) keeps driver loss under 30 mW even at 50 kHz PWM rates. The 12 mOhm RDS(on) reduces conduction loss in continuous-mode LED strings, and the small footprint allows per-channel placement without board bloat. Compared to a buck-converter solution for each string, this P-channel + inductor topology cuts BOM cost by 60% and EMI by 40% in medium-brightness signage and architectural lighting.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSZ120P03NS3GATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSO120P03NS3G | BSZ0901NS | BSZ120P03NS3GATMA1-Q1 | NTTFS4C02NTAG | SiSA04DN |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8 (3.3 x 3.3 mm) | PG-TSDSON-8 (3.3 x 3.3 mm) - same | PG-TSDSON-8 (3.3 x 3.3 mm) - same | PG-TSDSON-8 (3.3 x 3.3 mm) - same | TSDSON-8 (3.3 x 3.3 mm) - same footprint | TSDSON-8 (3.3 x 3.3 mm) - same footprint |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS max | -30 V | -30 V | -30 V | -30 V | -30 V | -30 V |
| RDS(on) max @ VGS=-10V | 12 mOhm | 14 mOhm | 9 mOhm | 12 mOhm | 13 mOhm | 15 mOhm |
| Technology | OptiMOS P3 | OptiMOS P2 | OptiMOS P3 | OptiMOS P3 | onsemi P-channel trench | Vishay TrenchFET P3 |
| Automotive Grade | No | No | No | Yes (AEC-Q101) | No | No |
| Price @ 1k (USD, as of 2026-09-15) | 0.15 | 0.18 | 0.22 | 0.28 | 0.16 | 0.17 |
Bảo phân biệt quan trọng
- OptiMOS P3 generation with industry-leading FOM (vsBSO120P03NS3G (OptiMOS P2))
- P-channel topology eliminates charge-pump requirement (vsN-channel MOSFETs in same package (e.g., BSC050N04LSGATMA1))
- Industry-standard TSDSON-8 footprint enables multi-source flexibility (vsProprietary Infineon-only packages)
Ghi chú thiết kế
Estimated: at continuous -11 A in TA=25C free air on a 1-inch 2 oz copper pad, power dissipation is P = I^2 x RDS(on) = 121 x 0.012 = 1.45 W. With RthJA ~38 C/W for TSDSON-8 on standard copper, junction rise is approximately 55C above ambient, putting TJ at ~80C. For TA=85C designs, derate current to ~7 A or use a 2-inch copper pad to keep TJ below 125C. Forced-air cooling extends the practical limit significantly.
The TSDSON-8 thermal pad must be soldered to a copper pour with an array of at least 9 thermal vias (0.3 mm drill, 0.6 mm pitch) for rated power dissipation. Use 2 oz copper for power applications and 1 oz copper for signal-level switching. Place input/output traces wide and short to minimize parasitic inductance; keep the gate-drive trace under 5 mm to prevent ringing at high dV/dt.
Do not exceed VGS = +/-20 V - the BSZ120P03NS3GATMA1 has an ESD-sensitive gate that can be damaged by controller startup transients. Always include a 10 kohm gate-source resistor to prevent unintended turn-on during power-up, and add a 5.1 V Zener between gate and source for high-transient environments. In P-channel high-side switching, verify the gate is pulled UP to source potential during OFF state, never floating.
At switching frequencies above 500 kHz, the gate-drain charge (Qgd) of OptiMOS P3 devices creates a Miller plateau that can cause shoot-through if the gate drive is too slow. Use a gate driver with 1 A peak source/sink capability and add a small series gate resistor (10-47 ohm) to damp ringing. For DC-DC applications, monitor the VDS waveform with a low-inductance probe to verify clean switching edges without parasitic oscillations.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - choose BSZ120P03NS3GATMA1-Q1 for automotive AEC-Q101 needs. Lead-free reflow soldering compatible with J-STD-020 peak temperature of 260C.
