BSZ120P03NS3GATMA1 - -30V P-Ch 12mOhm OptiMOS P3 MOSFET | Infineon
MPN: BSZ120P03NS3GATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.34 | $0.34 |
| 10 | $0.28 | $2.80 |
| 100 | $0.22 | $22.00 |
| 500 | $0.18 | $90.00 |
| 1,000 | $0.15 | $150.00 |
| 5,000 | $0.12 | $600.00 |
BSZ120P03NS3GATMA1 Overview
A P-channel MOSFET is a metal-oxide-semiconductor field-effect transistor in which the body and drain are formed in an n-well, and conduction is by holes rather than electrons. P-channel parts simplify high-side switching because the device can be placed between the load and ground, allowing direct gate drive from logic-level signals without a charge pump in many topologies. This places P-channel MOSFETs in the hierarchy: MOSFET -> discrete semiconductor -> power switch -> power management.
Key features include 12 mOhm maximum RDS(on) at VGS=-10 V, fast switching performance optimized by the OptiMOS P3 generation, low gate charge (Qg) for reduced driver loss, and an integrated ESD-protected gate structure. The 3.3 x 3.3 mm PQFN package has a small thermal pad that delivers low RthJA, allowing the part to dissipate 2.1 W on a standard 1-inch copper pad with adequate airflow, and 52 W on the die itself at Tc=25C.
In application, the BSZ120P03NS3GATMA1 is typically used as a high-side load switch between a 5 V, 12 V or up to 24 V supply rail and the load, with a logic-level gate drive between 0 V and VCC. Its P-channel polarity eliminates the need for a bootstrap supply in many half-bridge and reverse-polarity protection circuits. Designers must respect SOA curves at low VDS, where silicon P-channels are inherently less rugged than N-channel counterparts.
Typical applications include USB VBUS load switching, battery charging and power-path management, reverse-polarity protection in industrial and automotive subsystems, hot-swap controllers, motor and solenoid drivers, and LED matrix drivers. The wide VDS range and low gate charge also make it suitable for OR-ing diodes in redundant power systems.
When designing with this device, ensure the VGS drive rail comfortably exceeds the VGS(th) (typ. -1.7 V) under worst-case cold conditions; at room temp a -3.3 V GPIO can fully enhance the part. Use a 10 kohm gate-source resistor to prevent unintended turn-on during transients, and respect SOA at low VDS for inductive loads.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS P3 family and qualified cross-brand substitutes, and practical thermal/layout design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for BSZ120P03NS3GATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSZ120P03NS3GATMA1 (same form factor and footprint) β differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSO120P03NS3G
β Drop-Inπ Reference alternative (not in catalog)
BSZ0901NSIATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.34 / Unit
View Datasheet βBSZ120P03NS3GATMA1-Q1
β Drop-Inπ Reference alternative (not in catalog)
BSC050N04LSGATMA1
β Drop-Inβ In Stock
$0.41 / Unit
View Datasheet βNTTFS4C02NTAG
β Drop-Inπ Reference alternative (not in catalog)
SiSA04DN
β Drop-Inπ Reference alternative (not in catalog)
BSZ120P03NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (TA=25C) | -11 A |
| Continuous Drain Current (TC=25C) | -40 A |
| Power Dissipation (TA=25C) | 2.1 W |
| Power Dissipation (TC=25C) | 52 W |
| On-Resistance RDS(on) max @ VGS=-10V | 12 mOhm |
| Gate-Source Voltage (VGS) | +/-20 V |
| Gate Threshold Voltage VGS(th) typ | -1.7 V |
| Technology | OptiMOS P3 |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Operating Temperature Range | -55C to +150C |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Lead-Free | Yes |
BSZ120P03NS3GATMA1 Pin Configuration
| Pin 1 | G β Gate |
| Pin 2 | S β Source |
| Pin 3 | S β Source |
| Pin 4 | D β Drain (connected internally to thermal pad) |
| Pin 5 | S β Source |
| Pin 6 | S β Source |
| Pin 7 | S β Source |
| Pin 8 | S β Source |
Safe Operating Area (DC)
Typical Applications
BSZ120P03NS3GATMA1 is suitable for 6 applications: USB VBUS Load Switch, Battery Power-Path Management, Reverse-Polarity Protection, Hot-Swap / In-Rush Control, Solenoid and Relay Driver (Low-Side Equivalent), LED Matrix and Backlight Driver.
USB VBUS Load Switch
The BSZ120P03NS3GATMA1 is ideal for USB VBUS load switching from 5 V up to 20 V USB-PD rails. Its P-channel topology enables direct GPIO drive without a charge pump, and the 12 mOhm RDS(on) drops only 60 mV at 5 A, preserving the 5 V rail within USB-IF tolerance. The 30 V VDS rating provides 50% margin over 20 V USB-PD, and the small 3.3 x 3.3 mm TSDSON-8 footprint fits compact Type-C dongles. Compared to a discrete Schottky OR-ing solution, this MOSFET cuts conduction loss by 80% and supports 5 A continuous without thermal derating. Pair it with a 10 kohm gate pull-down and TVS for full USB-IF compliance.
Recommended
Battery Power-Path Management
In single-cell Li-ion or multi-cell NiMH power-path designs, the BSZ120P03NS3GATMA1 serves as a high-side reverse-polarity and load-disconnect switch. With VDS=-30 V it tolerates 12 V wall-adapter transients, and at 11 A continuous it can drive 2-3 A battery packs directly with negligible RDS(on) loss. The OptiMOS P3 process provides low Qg for sub-microsecond turn-off, critical during short-circuit protection events. The part's -1.7 V typical VGS(th) means a 3.3 V GPIO can fully enhance the channel, eliminating the level-shifter needed for N-channel parts. Designers should add a Schottky freewheeling diode across the load for inductive battery packs.
Recommended
Reverse-Polarity Protection
The BSZ120P03NS3GATMA1 makes an excellent reverse-polarity protection (RPP) switch for industrial 24 V buses, automotive 12 V subsystems, and PoE applications. Wired source-to-battery and drain-to-load, the intrinsic body diode conducts during startup; once VGS is biased negative the channel enhances and conduction loss drops to I^2 x 12 mOhm. Compared to a Schottky diode RPP (which wastes 0.3-0.5 V), this MOSFET cuts dissipation by 95% and improves overall system efficiency. The part's 30 V VDS comfortably exceeds 24 V industrial transients, and its -55C to +150C operating range suits outdoor deployments.
Recommended
Hot-Swap / In-Rush Control
For hot-swap and in-rush current limiting in distributed power systems, the BSZ120P03NS3GATMA1 can be PWM-driven with a hot-swap controller to softly ramp up load capacitance. Its 12 mOhm RDS(on) minimizes steady-state loss, and the small TSDSON-8 footprint allows placement right at the connector. The -1.7 V VGS(th) provides clean turn-on at low duty cycles, and the OptiMOS P3 SOA at low VDS is robust enough to survive brief short-circuit events when paired with a controller like the LTC4217 or ADM1171. Compared to using a higher-RDS N-channel part with a charge pump, this P-channel solution reduces BOM cost and board area.
Recommended
Solenoid and Relay Driver (Low-Side Equivalent)
While typically used as a high-side switch, the BSZ120P03NS3GATMA1 can also serve as a low-side solenoid or relay driver when paired with a logic-level gate drive. Its 11 A continuous current easily drives 5 A automotive relays and most industrial solenoid valves. The P-channel polarity simplifies wiring in chassis-grounded systems where the load returns to battery negative. The 30 V VDS handles inductive flyback when paired with a flyback diode, and the 2.1 W power rating on 1-inch copper allows 8 A pulsed operation without additional heatsinking. Compared to bipolar Darlington drivers, this MOSFET eliminates the 1.5 V VCE(sat) loss.
Recommended
LED Matrix and Backlight Driver
The BSZ120P03NS3GATMA1 can PWM-drive multi-channel LED matrices and backlight strings from 5 V to 24 V supplies. With a switching frequency up to 1 MHz, the MOSFET's low Qg (~30 nC typical) keeps driver loss under 30 mW even at 50 kHz PWM rates. The 12 mOhm RDS(on) reduces conduction loss in continuous-mode LED strings, and the small footprint allows per-channel placement without board bloat. Compared to a buck-converter solution for each string, this P-channel + inductor topology cuts BOM cost by 60% and EMI by 40% in medium-brightness signage and architectural lighting.
Recommended
Recommended Products Summary
Engineering reference data for BSZ120P03NS3GATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSO120P03NS3G | BSZ0901NS | BSZ120P03NS3GATMA1-Q1 | NTTFS4C02NTAG | SiSA04DN |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8 (3.3 x 3.3 mm) | PG-TSDSON-8 (3.3 x 3.3 mm) - same | PG-TSDSON-8 (3.3 x 3.3 mm) - same | PG-TSDSON-8 (3.3 x 3.3 mm) - same | TSDSON-8 (3.3 x 3.3 mm) - same footprint | TSDSON-8 (3.3 x 3.3 mm) - same footprint |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS max | -30 V | -30 V | -30 V | -30 V | -30 V | -30 V |
| RDS(on) max @ VGS=-10V | 12 mOhm | 14 mOhm | 9 mOhm | 12 mOhm | 13 mOhm | 15 mOhm |
| Technology | OptiMOS P3 | OptiMOS P2 | OptiMOS P3 | OptiMOS P3 | onsemi P-channel trench | Vishay TrenchFET P3 |
| Automotive Grade | No | No | No | Yes (AEC-Q101) | No | No |
| Price @ 1k (USD, as of 2026-09-15) | 0.15 | 0.18 | 0.22 | 0.28 | 0.16 | 0.17 |
Key Differentiators
- OptiMOS P3 generation with industry-leading FOM (vs BSO120P03NS3G (OptiMOS P2))
- P-channel topology eliminates charge-pump requirement (vs N-channel MOSFETs in same package (e.g., BSC050N04LSGATMA1))
- Industry-standard TSDSON-8 footprint enables multi-source flexibility (vs Proprietary Infineon-only packages)
Design Notes
Estimated: at continuous -11 A in TA=25C free air on a 1-inch 2 oz copper pad, power dissipation is P = I^2 x RDS(on) = 121 x 0.012 = 1.45 W. With RthJA ~38 C/W for TSDSON-8 on standard copper, junction rise is approximately 55C above ambient, putting TJ at ~80C. For TA=85C designs, derate current to ~7 A or use a 2-inch copper pad to keep TJ below 125C. Forced-air cooling extends the practical limit significantly.
The TSDSON-8 thermal pad must be soldered to a copper pour with an array of at least 9 thermal vias (0.3 mm drill, 0.6 mm pitch) for rated power dissipation. Use 2 oz copper for power applications and 1 oz copper for signal-level switching. Place input/output traces wide and short to minimize parasitic inductance; keep the gate-drive trace under 5 mm to prevent ringing at high dV/dt.
Do not exceed VGS = +/-20 V - the BSZ120P03NS3GATMA1 has an ESD-sensitive gate that can be damaged by controller startup transients. Always include a 10 kohm gate-source resistor to prevent unintended turn-on during power-up, and add a 5.1 V Zener between gate and source for high-transient environments. In P-channel high-side switching, verify the gate is pulled UP to source potential during OFF state, never floating.
At switching frequencies above 500 kHz, the gate-drain charge (Qgd) of OptiMOS P3 devices creates a Miller plateau that can cause shoot-through if the gate drive is too slow. Use a gate driver with 1 A peak source/sink capability and add a small series gate resistor (10-47 ohm) to damp ringing. For DC-DC applications, monitor the VDS waveform with a low-inductance probe to verify clean switching edges without parasitic oscillations.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - choose BSZ120P03NS3GATMA1-Q1 for automotive AEC-Q101 needs. Lead-free reflow soldering compatible with J-STD-020 peak temperature of 260C.
