FDV301N - 25V 220mA N-Channel Digital FET | onsemi | SOT-23
MPN: FDV301N ✓ Hoạt độngFDV301N Tóm tắt
A digital FET, or logic-level MOSFET, is a small-signal field-effect transistor designed to switch fully on at the low gate-source voltages produced by microcontrollers, logic gates, and other digital ICs. Within the semiconductor hierarchy it sits under N-channel MOSFET -> small-signal MOSFET -> discrete power transistor -> Discrete & Power Modules. Unlike a bipolar digital transistor (which contains built-in base bias resistors), a digital FET requires no bias resistors at all, so a single device can replace several digital transistors that would otherwise need different bias-resistor values.
Key differentiating features include a 25 V drain-source rating for low-voltage rail switching, a typical RDS(on) of 4 ohm that minimizes conduction losses, and onsemi's proprietary high-cell-density DMOS silicon process. The DMOS process is specifically tailored to minimize on-state resistance at low gate drive, which is the defining characteristic of the digital-FET class.
Technically, the FDV301N is an enhancement-mode device: the channel is off at VGS = 0 V and turns on as gate voltage rises toward 2.7 V and beyond, where the datasheet characterizes RDS(on) around 5 ohm. Because the gate is insulated (MOS structure), gate drive current is negligible in steady state, allowing direct connection to GPIO pins with only a small series resistor for ESD/ring control.
Typical applications include low-side load switching in portable and battery-powered equipment, GPIO fan and LED load control, level-agnostic logic interfacing where digital transistors previously dominated, and small relay or buzzer drivers in consumer and industrial boards.
A key design consideration is power budget: at 220 mA and 4 ohm, conduction loss is roughly 0.19 W, which is Estimated: (I^2 x RDS(on), inputs 0.22 A and 4 ohm) approaching half of the 350 mW package limit, so verify worst-case VGS drive and ambient temperature.
This page synthesizes verified distributor data, drop-in alternatives, and design notes not consolidated in the manufacturer datasheet alone. Pricing shown is representative as of 2026-09-14 and should be confirmed at checkout.
Bộ thay thế dễ dàng lắp đặt cho FDV301N — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với FDV301N (cùng hình factor và footprint) — khác nhau ở Package, Technology, Transistor Type.
2N7002LT1G
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →FDV301N-ES
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MMBF170LT1G
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
BSS138LT1G
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →VB1240
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FDV301N Tỷ lệ tối đa & tính chất điện
| Kiểu transitor | N-Channel Enhancement Mode MOSFET (Digital FET) |
| Drain-Source Voltage (Vdss) | 25 V |
| Continuous Drain Current (Id) | 220 mA (Ta) |
| Peak Drain Current | 0.5 A |
| RDS(on) at VGS = 2.7 V | 5 ohm (typical) |
| RDS(on) typical | 4 ohm |
| Power Dissipation (Pd) | 350 mW (Ta) |
| Technology | High cell density DMOS |
| Gate Drive Type | Logic level (no bias resistors required) |
| Kiểu lắp đặt | Surface Mount |
| Hộp | SOT-23-3 |
Cấu hình chân FDV301N
| Chân 1 | G (Gate) — Gate terminal - logic-level control input |
| Chân 2 | S (Source) — Source terminal - typically connected to ground in low-side switching |
| Chân 3 | D (Drain) — Drain terminal - connects to the switched load |
Khu vực hoạt động an toàn (SOT-23, 350 mW limit)
Ứng dụng tiêu biểu
FDV301N phù hợp cho 6 Áp dụngs: Low-Side Load Switching in Battery-Powered Devices, GPIO LED and Indicator Driving, Small Relay and Buzzer Driver, Logic-Level Interfacing and Digital Transistor Replacement, Industrial Control Board Auxiliary Switching, Fan and Peripheral Power Gating in Embedded Systems.
Low-Side Load Switching in Battery-Powered Devices
The FDV301N fits portable battery-powered equipment because its logic-level gate turns fully on from a 2.5 V to 3.3 V microcontroller GPIO with no external bias resistors, and its DMOS process delivers about 4 ohm typical RDS(on) to keep conduction losses low on 25 V-max rails. In a typical low-side switch, the load sits between VBAT and the drain (pin 3), source (pin 2) ties to ground, and the GPIO drives gate (pin 1) through a 100 ohm series resistor. Because gate current is essentially zero in steady state, the switch adds nothing to quiescent budget; a pulldown resistor of 100k ohm prevents floating-gate leakage turn-on during MCU reset.
Được đề xuất
GPIO LED and Indicator Driving
LED strings and indicator lamps are classic FDV301N loads: the 0.22 A continuous rating comfortably covers single high-brightness LEDs and small indicator chains, while the 4 ohm typical on-resistance wastes only milliwatts. Place the FDV301N as a low-side switch with the LED string and its current-limiting resistor between the supply rail and the drain. Unlike a digital transistor with built-in base resistors, no input-side divider is needed, so one FDV301N replaces several bias-resistor variants - the exact substitution scenario described in the onsemi datasheet. At 100 mA and 5 ohm, Estimated: dissipation is just 0.05 W (inputs I = 0.1 A, R = 5 ohm), leaving large thermal margin in the 350 mW SOT-23.
Được đề xuất
Small Relay and Buzzer Driver
The FDV301N drives small 12 V relay coils and piezo/electromagnetic buzzers directly from 3.3 V or 5 V logic. Coil currents of 30-200 mA fall within the 0.22 A continuous rating, and the 25 V drain rating handles the nominal coil supply with margin for a clamped flyback transient. A flyback diode across the coil is mandatory - without it, the inductive turn-off spike can exceed the 25 V drain-source rating and destroy the FET. Wire the coil between the 12 V rail and the drain, source to ground, and gate to the MCU pin with a 100k ohm pulldown. The FDV301N-ES variant (0.9 A) suits higher-current relays where the base part is marginal.
Được đề xuất
Logic-Level Interfacing and Digital Transistor Replacement
onsemi designed the FDV301N explicitly as a replacement for digital (bias-resistor) transistors in low-voltage applications: since no bias resistors are required, one N-channel FET replaces several digital transistor types that each needed different resistor values. This simplifies BOM consolidation and second-sourcing on boards with mixed 2.5 V, 3.3 V, and 5 V logic. In level-shifting roles it can pull a node low against a pullup to a different rail, forming a bidirectional open-drain translator. RDS(on) of 4-5 ohm keeps the pulled node within millivolts of ground at logic currents, and the SOT-23 footprint matches standard digital-transistor land patterns for minimal layout change.
Được đề xuất
Industrial Control Board Auxiliary Switching
On industrial control boards the FDV301N serves as an auxiliary low-side switch for status LEDs, small buzzers, sensor supply gating, and firmware-controlled power islands. Its 25 V rating covers common 12 V and 24 V-derated auxiliaries (24 V is at the limit - verify margin), and surface-mount SOT-23 packaging fits dense controller layouts. When gating a sensor supply, note the switch drops I x RDS(on) (about 1.1 V at 220 mA worst case with 5 ohm), so budget the rail accordingly or use the part only for loads under about 100 mA where the drop is under 0.5 V. Estimated: at 100 mA the loss is 0.05 W (inputs I = 0.1 A, R = 5 ohm).
Được đề xuất
Fan and Peripheral Power Gating in Embedded Systems
Embedded boards frequently gate small 5 V fans, buzzers, camera modules, and wireless modules under firmware control; the FDV301N performs this role up to 220 mA continuous and 0.5 A peaks (fan start-up current), turning on cleanly from a 3.3 V GPIO. Place the FET in the low-side return path with a 100k ohm gate pulldown so the peripheral stays off during processor reset or bootloader gaps. Because the on-resistance is only 4-5 ohm, the peripheral sees nearly full rail voltage - at 150 mA fan load the drop is about 0.75 V worst case (Estimated: inputs I = 0.15 A, R = 5 ohm). For loads beyond 0.5 A peak, step up to a power-stage FET instead.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho FDV301N — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 2N7002LT1G | FDV301N-ES | MMBF170LT1G | BSS138LT1G | VB1240 |
|---|---|---|---|---|---|---|
| Package | SOT-23-3 | SOT-23-3 - same | SOT-23 - same | SOT-23-3 - same | SOT-23-3 - same | SOT23-3 - same |
| Brand | onsemi | onsemi | onsemi (Fairchild legacy) | onsemi | onsemi | VBsemi |
| Logic-Level Gate Drive | Yes (optimized at 2.7 V) | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Optimized for lowest-voltage logic-level drive (vs2N7002LT1G)
- Bias-resistor-free digital transistor replacement (vsVB1240)
- Family upgrade path in the same footprint (vsFDV301N-ES)
Ghi chú thiết kế
Budget conduction loss before committing to the FDV301N. Estimated: at full 220 mA load with worst-case 5 ohm RDS(on), dissipation is about 0.24 W (inputs I = 0.22 A, R = 5 ohm), roughly 70 percent of the 350 mW rating at 25 C ambient. Below about 100 mA the part is comfortable in any layout; above 150 mA, verify junction temperature with the datasheet RthJA and your board copper, and consider the 0.9 A FDV301N-ES variant for margin.
Keep the gate trace short and add a 100 ohm series resistor at the GPIO to damp ringing from long traces, plus a 100k ohm gate-to-source pulldown so the FET cannot float on during MCU reset or bootloader gaps. Because SOT-23 thermal performance depends on pad copper, extend the drain and source pads with at least a few square millimeters of pour when switching loads near 200 mA - small-signal packages rely entirely on their lands for heat removal.
The 25 V drain rating is absolute: inductive loads (relays, buzzers, fan windings) produce turn-off spikes far above the supply rail, so always fit a flyback diode across the coil or clamp the drain. Do not substitute a 20 V or lower part on 24 V rails, and do not assume 2.5 V drive achieves the 4 ohm typical RDS(on) - the datasheet characterizes 5 ohm at 2.7 V, so use that figure for worst-case loss calculations on 3.3 V logic.
Thông tin tuân thủ
Compliance attributes were not captured in the retrieved distributor snippets. onsemi current-production small-signal MOSFETs are typically RoHS/lead-free, but verify per exact ordering suffix on the onsemi product page or DigiKey environmental attributes before qualification.
