IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon
MPN: IPD50N03S4L06ATMA1 ✓ Hoạt độngIPD50N03S4L06ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify power in electronic circuits. The N-channel enhancement-mode family sits within the broader power MOSFET taxonomy (power MOSFET -> discrete semiconductor -> transistor -> semiconductor), and the DPAK/TO-252 surface-mount package belongs to the SMD transistor package family used for high-current low-voltage switching.
Key specifications include a maximum R_DS(on) of 5.5 mOhm at V_GS = 10 V, total gate charge of 31 nC, input capacitance of 2.33 nF, output capacitance of 600 pF, and reverse transfer capacitance of 34 pF. The gate threshold voltage is 2.2 V (typ), the part dissipates up to 56 W at Tc = 25 C, and it operates across -55 C to +175 C junction temperature. It is 100% avalanche-tested, MSL1 rated to 260 C peak reflow, and qualified to AEC-Q101 for automotive reliability.
The OptiMOS silicon uses a trench-gate structure that minimizes cell pitch and on-resistance per unit area while keeping the gate charge low. A monolithic body diode supports inductive switching, and the low R_DS(on) directly reduces conduction losses in high-current paths, allowing smaller PCB copper areas for the same thermal budget.
Typical applications include automotive 12 V motor control (e.g., fuel pumps, HVAC blowers, electric water pumps), electronic power steering, transmission control units, body and chassis ECUs, and high-current DC-DC converter switching stages. AEC-Q101 qualification makes it drop-in suitable for under-hood and other automotive harsh-environment designs.
A key design consideration is that switching performance depends strongly on gate-drive voltage - drive this part with at least 10 V V_GS to achieve the datasheet 5.5 mOhm R_DS(on), and place the gate resistor close to the gate pin to control ringing. For high-side use, verify that the bootstrap or charge-pump supply can deliver the 31 nC total gate charge at the required PWM frequency.
This page synthesizes distributor pricing, drop-in automotive MOSFET alternatives, and practical layout/thermal notes that go beyond the manufacturer datasheet's headline curves.
Bộ thay thế dễ dàng lắp đặt cho IPD50N03S4L06ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPD50N03S4L06ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, MSL Level, Operating Junction Temperature, Avalanche Tested, FET Type.
IPD90N04S403ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPG20N04S4L07ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD031N03LGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC028N06NSTATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ031NE2LS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD50N03S4L06ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DS) | 30 V |
| Continuous Drain Current (I_D, Tc) | 50 A |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V |
| Input Capacitance (C_iss) | 2.33 nF |
| Output Capacitance (C_oss) | 600 pF |
| Reverse Transfer Capacitance (C_rss) | 34 pF |
| Power Dissipation (P_D) | 56 W at Tc = 25 C |
| Nhiệt độ mối nối hoạt động | -55 C to +175 C |
| Hộp | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | MSL1 (up to 260 C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested |
| Trạng thái RoHS | Compliant (Green Package) |
Cấu hình chân IPD50N03S4L06ATMA1
| Chân 1 | Gate (G) — Gate drive input; drive with >=10 V V_GS to achieve full 5.5 mOhm R_DS(on) |
| Chân 2 | Drain (D) — Drain connection; tied to the metal tab and to the load or high-side rail |
| Chân 3 | Source (S) — Source connection; typically tied to system ground for low-side switching |
Khu vực hoạt động an toàn (DC, Tc = 25 C)
Ứng dụng tiêu biểu
IPD50N03S4L06ATMA1 phù hợp cho 6 Áp dụngs: Automotive 12V Motor Control (Fuel Pump, HVAC Blower, Water Pump), Electronic Power Steering (EPS) and Transmission ECUs, Body and Chassis ECUs (Lighting, Mirror, Seat Control), High-Current 12V DC-DC Converter Switching Stage, Reverse-Battery and Load-Dump Protection Circuits, Industrial 24V Brushed and Stepper Motor Drivers.
Automotive 12V Motor Control (Fuel Pump, HVAC Blower, Water Pump)
The IPD50N03S4L06ATMA1's 30 V V_DS, 50 A continuous I_D and 5.5 mOhm R_DS(on) at V_GS = 10 V make it well matched to brushed-DC automotive motor drivers running on a nominal 12 V bus with cranking transients. The DPAK package and 56 W P_D rating allow continuous motor currents of 25-35 A on a 1 sq-in 2 oz copper PCB footprint without an external heatsink. AEC-Q101 qualification supports under-hood deployment, and the 100% avalanche rating absorbs the inductive kick from motor turn-off. A typical circuit places the MOSFET on the low-side with a flyback Schottky or TVS across the motor and a 10 k gate resistor to damp PWM-edge ringing.
Được đề xuất
Electronic Power Steering (EPS) and Transmission ECUs
Electronic power steering and automatic transmission ECUs demand AEC-Q101 grade N-channel MOSFETs with low R_DS(on) and tight thermal performance at sustained high current. The IPD50N03S4L06ATMA1 delivers 5.5 mOhm R_DS(on) and 56 W power dissipation in DPAK, fitting the 3-phase inverter and DC-DC stage of EPS modules where dozens of amps switch at 20 kHz PWM. The 175 C junction rating supports under-hood coolant temperatures, and the 31 nC total gate charge keeps switching losses manageable without a high-current gate driver. Engineers typically place one or two of these parts in parallel for higher current paths and de-rate by 70 percent for junction-temperature margin.
Được đề xuất
Body and Chassis ECUs (Lighting, Mirror, Seat Control)
Body and chassis modules such as LED headlamp drivers, power mirror modules, and seat-adjustment ECUs use DPAK MOSFETs as low-side switches for loads in the 5-30 A range. The IPD50N03S4L06ATMA1's 5.5 mOhm R_DS(on) keeps conduction loss below 1 W at 15 A load, eliminating the need for an external heatsink on the body-module PCB. Its 30 V rating covers 12 V cold-cranking transients up to ~18 V, and AEC-Q101 + 175 C junction temperature support engine-bay and firewall-mounted ECU locations. Designers usually pair this MOSFET with a TVS on the drain and a 100 kohm gate pull-down to keep the FET off during MCU reset.
Được đề xuất
High-Current 12V DC-DC Converter Switching Stage
In non-isolated buck and boost converters on the 12 V automotive bus, the IPD50N03S4L06ATMA1 serves as the main switch, delivering 30 V V_DS headroom and 31 nC Q_g for PWM frequencies up to ~100 kHz. With 5.5 mOhm R_DS(on), conduction losses stay low enough for 10-15 A continuous output without exotic thermal management. The DPAK tab provides a low-thermal-resistance path to inner-layer copper pours, enabling sustained switching at full load. Combined with a synchronous rectifier (often another low-R_DS(on) MOSFET), this part forms the heart of compact step-down POL converters for ADAS and infotainment processors.
Được đề xuất
Reverse-Battery and Load-Dump Protection Circuits
Reverse-battery protection and load-dump clamping circuits in automotive power distribution need a low-R_DS(on) N-channel MOSFET in DPAK that can sustain high inrush current and absorb avalanche energy. The IPD50N03S4L06ATMA1's 100% avalanche-tested rating and 5.5 mOhm R_DS(on) make it appropriate as the main reverse-polarity disconnect switch, where a 50 A inrush may flow briefly at cold-crank. Its 30 V rating requires a TVS clamp to handle ISO 7637-2 load-dump pulses above 30 V, and the 175 C junction allows continuous conduction up to the thermal limit of the PCB copper. Designers often use two of these parts in back-to-back configuration for true bidirectional blocking.
Được đề xuất
Industrial 24V Brushed and Stepper Motor Drivers
Industrial 24 V brushed DC and bipolar stepper motor drivers below ~15 A continuous current can use the IPD50N03S4L06ATMA1 as a low-side switch per phase, leveraging its 5.5 mOhm R_DS(on) to limit conduction loss and reduce heat-sinking. The 30 V V_DS rating covers 24 V nominal rails with margin for back-EMF spikes up to ~28 V, and the 175 C junction rating supports enclosed industrial cabinets at 60-70 C ambient. AEC-Q101 stress testing means the part also tolerates industrial shock, vibration, and thermal-cycling profiles. Engineers typically PWM at 20-40 kHz with a gate-driver IC and add 10-22 ohm gate resistors to control dV/dt ringing.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPD50N03S4L06ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPD90N04S403ATMA1 | IPG20N04S4L07ATMA1 | IPD031N03LGATMA1 | BSC028N06NSTATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| V_DS max | 30 V | 40 V | 40 V | 30 V | 60 V | 25 V |
| R_DS(on) max @ V_GS=10V | 5.5 mOhm | 3.9 mOhm | 2.0 mOhm | 3.1 mOhm | 2.8 mOhm | 3.1 mOhm |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Bảo phân biệt quan trọng
- Lower voltage rating optimized for 12 V automotive rails (vsIPG20N04S4L07ATMA1)
- Industry-standard DPAK footprint for drop-in second sourcing (vsBSC028N06NSTATMA1)
- Standard 10 V gate drive, not logic-level (vsIPD031N03LGATMA1)
Ghi chú thiết kế
Estimated: at I_D = 30 A and R_DS(on) = 5.5 mOhm, conduction loss is roughly P = I^2 * R = 30^2 * 0.0055 = 4.95 W. With a DPAK theta_JA of approximately 50 C/W on 1 sq-in 2 oz copper, junction temperature rise is about 248 C above 25 C ambient - exceeding the 175 C limit. Reduce continuous current to about 25 A or add a small heatsink tab to keep Tj below 150 C at 85 C ambient. Always derate automotive MOSFETs to a maximum Tj of 150 C for reliability margin.
The DPAK tab is electrically connected to the drain. Solder the tab to a copper pour that is also the drain thermal node, with thermal vias to inner planes to drop theta_JA. Provide a 6-8 mil solder paste layer and use the recommended land pattern from IPC-7351 (TO-252). Keep the gate-trace short (<10 mm) and surround it with ground to minimize gate-loop inductance that causes ringing at dV/dt edges above 5 V/ns.
Place the gate drive resistor (typically 10-22 ohm) within 5 mm of the gate pin. For high-current paths use 2 oz or 3 oz copper on the drain and source pours to limit resistive voltage drops and to spread heat. Add a 100 kohm gate-to-source pull-down so the MOSFET stays off if the gate driver loses power, and place a TVS (e.g. 33 V SMA) from drain to source for unclamped inductive switching protection when reverse-battery or load-dump transients are possible.
Driving this part with V_GS = 4.5 V (typical microcontroller rail) instead of 10 V will more than double R_DS(on) and push the part out of its thermal envelope. Do not parallel these FETs without individual gate-source resistors to suppress parasitic-oscillation. Verify the body diode's reverse-recovery behavior if used in a half-bridge without a synchronous rectifier - the OptiMOS body diode is fast but still requires dead-time control above 50 kHz PWM.
Thông tin tuân thủ
AEC-Q101 automotive qualified per Infineon datasheet; MSL1 rated to 260 C peak reflow; Green Package (RoHS compliant) per Infineon product family marking. AEC-Q100 column used here to denote automotive-grade qualification since this is a discrete MOSFET qualified to AEC-Q101 (the automotive discrete analog of AEC-Q100 for ICs).
