IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
MPN: IAUA220N08S5N021AUMA1 ✓ Hoạt độngIAUA220N08S5N021AUMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an electric field on the gate insulator to modulate the conductivity of the semiconductor channel between source and drain. Within the broader taxonomy, N-channel MOSFETs sit inside the power-MOSFET family, which in turn belongs to discrete semiconductors, and specifically to the automotive-grade OptiMOS-5 product line. The 'N-channel' designation means the majority carriers are electrons, yielding lower on-resistance per unit silicon area than equivalent P-channel parts. In switching converter, motor drive, and load-switch topologies, the MOSFET acts as the synchronous rectifier or high-side/low-side switch.
Key electrical specifications include a maximum drain-to-source voltage V_DS of 80 V, a continuous drain current of 220 A (Tj-rated), pulsed avalanche capability, gate threshold voltage V_GS(th) typically around 2-3 V, and an R_DS(on) of 2.1 mΩ at 10 V V_GS. The OptiMOS-5 technology improves figure-of-merit (R_DS(on) × Q_g) by 30% versus the prior generation. The PG-HSOF-5-4 package provides an exposed source-pad thermal interface enabling direct PCB heat-sinking through copper pours, with a low thermal resistance path to the heatsink.
Typical applications span automotive 48 V mild-hybrid auxiliary drives, electric power steering (EPS), brake-by-wire systems, LED headlamp power stages, HVAC blower motor drives, e-mobility controllers, and high-current DC-DC converters. The AEC-Q101 qualification and 175 °C maximum junction temperature ensure reliability under automotive underhood thermal cycling. The 80 V V_DS rating provides ample margin over 12 V/24 V battery transients (load-dump pulses up to ~35 V for 12 V systems, ~58 V for 24 V systems).
When designing with this MOSFET, place the gate driver within 5 mm of the gate pin to minimize parasitic loop inductance. Use a 10 Ω gate resistor to dampen ringing. Provide a thermal copper-pour area of at least 100 mm² on the source pad to achieve the rated 211 W Tc dissipation. Verify V_GS never exceeds the ±20 V absolute maximum during switching transients to avoid gate-oxide failure.
Bộ thay thế dễ dàng lắp đặt cho IAUA220N08S5N021AUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUA220N08S5N021AUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
IAUCN08S7L033ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUC120N04S6N010ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC076N04NDATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IPC100N04S5L1R5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IQDH29NE2LM5CGSCATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IQE013N04LM6ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUA220N08S5N021AUMA1 Tỷ lệ tối đa & tính chất điện
| Technology | OptiMOS-5 (75V-120V family) |
| Drain-Source Voltage (V_DS max) | 80 V |
| Continuous Drain Current (I_D, Tj) | 220 A |
| Static Drain-Source On-Resistance (R_DS(on)) | 2.1 mΩ at 10 V V_GS |
| Power Dissipation (P_D, Tc) | 211 W |
| Khoảng nhiệt độ hoạt động | -55C to +175C (Tj) |
| Hộp | PG-HSOF-5-4 (7x8 mm²) |
| Kiểu lắp đặt | Surface Mount |
| Channel Type | N-Channel |
| Automotive Qualification | AEC-Q101 qualified |
| Trạng thái RoHS | Compliant |
Cấu hình chân IAUA220N08S5N021AUMA1
| Chân 1 | G — Gate - gate drive input, controls channel conduction |
| Chân 2 | D — Drain - high-voltage terminal, connects to load or supply |
| Chân 3 | S — Source - return path, connected to exposed pad |
| Chân 4 | S — Source - thermal/electrical connection to exposed pad |
| Chân 5 | S — Source - thermal/electrical connection to exposed pad |
| Chân PAD | Exposed Pad (Source) — Source connection and thermal dissipation path to PCB copper |
Khu vực hoạt động an toàn - IAUA220N08S5N021AUMA1
Ứng dụng tiêu biểu
IAUA220N08S5N021AUMA1 phù hợp cho 6 Áp dụngs: Automotive Electric Power Steering (EPS), 48 V Mild-Hybrid DC-DC Converter, LED Headlamp Power Stage, Brake-by-Wire Actuator Drive, HVAC Blower Motor Control, E-Mobility Motor Controller.
Automotive Electric Power Steering (EPS)
The IAUA220N08S5N021AUMA1's 220 A continuous drain current and 2.1 mΩ R_DS(on) make it ideal for the 3-phase inverter driving an EPS brushless DC motor. At 100 A peak phase current, conduction loss is only 21 W (P = I² × R_DS(on)) per switch, enabling highly efficient steering-assist operation. The 80 V V_DS rating provides headroom over 12 V battery load-dump transients to 35 V, and AEC-Q101 qualification ensures reliability across automotive underhood thermal cycling from -40 °C to +125 °C ambient.
Được đề xuất
48 V Mild-Hybrid DC-DC Converter
The IAUA220N08S5N021AUMA1's 80 V V_DS rating and 220 A current capability suit it for the primary-side switch in a 48 V to 12 V buck converter powering auxiliary loads in mild-hybrid electric vehicles. With 2.1 mΩ R_DS(on), switching losses dominate at high frequency, but the low conduction loss enables high step-down ratios with good efficiency. The PG-HSOF-5-4 exposed source pad allows direct PCB thermal management via copper pours, supporting the high current density required at 48 V bus rails.
Được đề xuất
LED Headlamp Power Stage
The IAUA220N08S5N021AUMA1 drives high-current LED strings in matrix-beam LED headlamps where precise PWM dimming at high currents is required. Its 220 A continuous current rating handles transient inrush when LED banks are activated, and the low R_DS(on) of 2.1 mΩ minimizes thermal dissipation in the headlamp housing where ambient temperatures reach 85 °C. The AEC-Q101 qualification is essential for the automotive lighting reliability requirements and the underhood thermal environment.
Được đề xuất
Brake-by-Wire Actuator Drive
The IAUA220N08S5N021AUMA1 is well-suited for the H-bridge inverter driving a brake-by-wire hydraulic pump motor. Its 220 A rating supports the high peak current during emergency braking events, while the 2.1 mΩ R_DS(on) limits steady-state thermal rise during normal pedal-modulation cycles. The 80 V V_DS rating ensures survival of 24 V truck-system load-dump transients to 58 V, and AEC-Q101 qualification covers the functional-safety requirements of brake-by-wire systems.
Được đề xuất
HVAC Blower Motor Control
The IAUA220N08S5N021AUMA1 handles the high-current switching required for HVAC blower motor speed control, where 12 V brushless DC motors can draw 30-80 A continuous. Its 2.1 mΩ R_DS(on) provides high efficiency at full speed, while the 220 A current rating provides ample derating margin for 10+ year automotive service life. The PG-HSOF-5-4 package's exposed pad enables compact PCB layouts suitable for HVAC module integration behind the dashboard.
Được đề xuất
E-Mobility Motor Controller
The IAUA220N08S5N021AUMA1 is suitable for e-scooter and e-bike traction motor controllers where high peak current is needed for acceleration. The 80 V V_DS rating covers 48 V battery systems with margin, and the 2.1 mΩ R_DS(on) enables peak currents of 200+ A in compact motor housings. The OptiMOS-5 technology's improved figure-of-merit (R_DS(on) × Q_g) reduces switching losses at the 20-50 kHz PWM frequencies typical of e-mobility traction inverters.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUA220N08S5N021AUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN08S7L033ATMA1 | IAUC120N04S6N010ATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|
| Package | PG-HSOF-5-4 (7x8 mm²) | PG-HSOF-5-4 (7x8 mm²) - same | PG-HSOF-5-4 (7x8 mm²) - same | PG-HSOF-5-4 (7x8 mm²) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max | 80 V | 80 V (same) | 40 V (50% lower) | 40 V (50% lower) |
| R_DS(on) | 2.1 mΩ | 1.4 mΩ (~33% lower) | 1.0 mΩ (~52% lower) | 7.6 mΩ (260% higher) |
| Technology Family | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Max Junction Temperature | 175 C | 175 C (same) | 175 C (same) | 175 C (same) |
| Approx. Unit Price (qty 1000) | $2.78 USD | Higher (lower R_DS(on) class) | Lower (lower V_DS class) | Lower (higher R_DS(on)) |
Bảo phân biệt quan trọng
- Highest current rating in PG-HSOF-5-4 / 80V OptiMOS-5 family (vsIAUC120N04S6N010ATMA1)
- Optimized 80V V_DS for 24V/48V automotive bus architectures (vsBSC076N04NDATMA1)
- Ultra-low 2.1 mΩ R_DS(on) reduces conduction loss in high-current paths (vsGeneric 80V MOSFET competitors)
Ghi chú thiết kế
At 100 A continuous load with R_DS(on) of 2.1 mΩ, conduction loss is approximately 21 W (P = I² × R). Estimated: with a junction-to-case thermal resistance (R_thJC) of 0.7 C/W (typical for PG-HSOF-5-4), the case-to-ambient thermal resistance must be below 6 C/W to keep Tj below 150 °C at 25 °C ambient. This requires a PCB copper-pour area of at least 100 mm² on the source pad, or an external heatsink. For continuous operation above 150 A, active cooling is recommended.
The PG-HSOF-5-4 package has 5 source-connected pins plus the exposed bottom pad. The PCB land pattern MUST include a continuous copper pour under the exposed pad with thermal vias (0.3 mm drill, 0.5 mm pitch) connecting to inner-plane heat-spreading copper. Use at least 9 thermal vias for 100 mm² copper area. Source-sense connection (Kelvin source) is recommended for the gate-drive return to minimize source-inductance-induced gate ringing at high di/dt switching.
Place the gate driver within 5 mm of the gate pin to minimize gate-loop inductance. Use a 10 Ω gate-source resistor to dampen parasitic oscillations at switching transients. Add a 100 kΩ gate-source pull-down resistor to keep the MOSFET off during controller power-up. The high-current source/drain paths require wide PCB traces (at least 5 mm wide for 100 A) and multiple vias to inner copper planes. Estimated parasitic inductance of a 10 mm wide trace over ground plane is approximately 5 nH per cm.
Do not exceed the absolute maximum V_GS of ±20 V. During turn-off transients, the gate-source voltage can spike beyond the driver supply due to source-inductance coupling; add a gate-source Zener clamp or TVS diode for protection. Verify V_DS stays below 80 V during load-dump and avalanche events - this part is avalanche-rated but repetitive avalanche degrades R_DS(on) over time. For parallel MOSFET operation, screen parts for matched R_DS(on) at the operating current to avoid current hogging.
Thông tin tuân thủ
AEC-Q101 automotive-qualified per Infineon datasheet product validation section. AEC-Q100 does not apply (Q100 is for ICs, Q101 is for discrete semiconductors). RoHS and REACH compliant per distributor listings.
