IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
Référence : IAUA220N08S5N021AUMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.85 | $4,85 |
| 10 | $4.36 | $43,60 |
| 100 | $3.68 | $368,00 |
| 500 | $3.12 | $1 560,00 |
| 1 000 | $2.78 | $2 780,00 |
| 3 000 | $2.45 | $7 350,00 |
IAUA220N08S5N021AUMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an electric field on the gate insulator to modulate the conductivity of the semiconductor channel between source and drain. Within the broader taxonomy, N-channel MOSFETs sit inside the power-MOSFET family, which in turn belongs to discrete semiconductors, and specifically to the automotive-grade OptiMOS-5 product line. The 'N-channel' designation means the majority carriers are electrons, yielding lower on-resistance per unit silicon area than equivalent P-channel parts. In switching converter, motor drive, and load-switch topologies, the MOSFET acts as the synchronous rectifier or high-side/low-side switch.
Key electrical specifications include a maximum drain-to-source voltage V_DS of 80 V, a continuous drain current of 220 A (Tj-rated), pulsed avalanche capability, gate threshold voltage V_GS(th) typically around 2-3 V, and an R_DS(on) of 2.1 mΩ at 10 V V_GS. The OptiMOS-5 technology improves figure-of-merit (R_DS(on) × Q_g) by 30% versus the prior generation. The PG-HSOF-5-4 package provides an exposed source-pad thermal interface enabling direct PCB heat-sinking through copper pours, with a low thermal resistance path to the heatsink.
Typical applications span automotive 48 V mild-hybrid auxiliary drives, electric power steering (EPS), brake-by-wire systems, LED headlamp power stages, HVAC blower motor drives, e-mobility controllers, and high-current DC-DC converters. The AEC-Q101 qualification and 175 °C maximum junction temperature ensure reliability under automotive underhood thermal cycling. The 80 V V_DS rating provides ample margin over 12 V/24 V battery transients (load-dump pulses up to ~35 V for 12 V systems, ~58 V for 24 V systems).
When designing with this MOSFET, place the gate driver within 5 mm of the gate pin to minimize parasitic loop inductance. Use a 10 Ω gate resistor to dampen ringing. Provide a thermal copper-pour area of at least 100 mm² on the source pad to achieve the rated 211 W Tc dissipation. Verify V_GS never exceeds the ±20 V absolute maximum during switching transients to avoid gate-oxide failure.
Alternatives de remplacement direct pour IAUA220N08S5N021AUMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUA220N08S5N021AUMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUCN08S7L033ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.86 / unité
Voir la fiche technique →IAUC120N04S6N010ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.68 / unité
Voir la fiche technique →BSC076N04NDATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.82 / unité
Voir la fiche technique →IPC100N04S5L1R5ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1.18 / unité
Voir la fiche technique →IQDH29NE2LM5CGSCATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1.84 / unité
Voir la fiche technique →IQE013N04LM6ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.71 / unité
Voir la fiche technique →IAUA220N08S5N021AUMA1 Valeurs maximales et caractéristiques électriques
| Technology | OptiMOS-5 (75V-120V family) |
| Drain-Source Voltage (V_DS max) | 80 V |
| Continuous Drain Current (I_D, Tj) | 220 A |
| Static Drain-Source On-Resistance (R_DS(on)) | 2.1 mΩ at 10 V V_GS |
| Power Dissipation (P_D, Tc) | 211 W |
| Plage de température de fonctionnement | -55C to +175C (Tj) |
| Boîtier | PG-HSOF-5-4 (7x8 mm²) |
| Type de montage | Surface Mount |
| Channel Type | N-Channel |
| Automotive Qualification | AEC-Q101 qualified |
| Statut RoHS | Compliant |
Configuration des broches de IAUA220N08S5N021AUMA1
| Broche 1 | G — Gate - gate drive input, controls channel conduction |
| Broche 2 | D — Drain - high-voltage terminal, connects to load or supply |
| Broche 3 | S — Source - return path, connected to exposed pad |
| Broche 4 | S — Source - thermal/electrical connection to exposed pad |
| Broche 5 | S — Source - thermal/electrical connection to exposed pad |
| Broche PAD | Exposed Pad (Source) — Source connection and thermal dissipation path to PCB copper |
Zone de fonctionnement sûr - IAUA220N08S5N021AUMA1
Applications typiques
IAUA220N08S5N021AUMA1 convient pour 6 applications: Automotive Electric Power Steering (EPS), 48 V Mild-Hybrid DC-DC Converter, LED Headlamp Power Stage, Brake-by-Wire Actuator Drive, HVAC Blower Motor Control, E-Mobility Motor Controller.
Automotive Electric Power Steering (EPS)
The IAUA220N08S5N021AUMA1's 220 A continuous drain current and 2.1 mΩ R_DS(on) make it ideal for the 3-phase inverter driving an EPS brushless DC motor. At 100 A peak phase current, conduction loss is only 21 W (P = I² × R_DS(on)) per switch, enabling highly efficient steering-assist operation. The 80 V V_DS rating provides headroom over 12 V battery load-dump transients to 35 V, and AEC-Q101 qualification ensures reliability across automotive underhood thermal cycling from -40 °C to +125 °C ambient.
Recommandé
48 V Mild-Hybrid DC-DC Converter
The IAUA220N08S5N021AUMA1's 80 V V_DS rating and 220 A current capability suit it for the primary-side switch in a 48 V to 12 V buck converter powering auxiliary loads in mild-hybrid electric vehicles. With 2.1 mΩ R_DS(on), switching losses dominate at high frequency, but the low conduction loss enables high step-down ratios with good efficiency. The PG-HSOF-5-4 exposed source pad allows direct PCB thermal management via copper pours, supporting the high current density required at 48 V bus rails.
Recommandé
LED Headlamp Power Stage
The IAUA220N08S5N021AUMA1 drives high-current LED strings in matrix-beam LED headlamps where precise PWM dimming at high currents is required. Its 220 A continuous current rating handles transient inrush when LED banks are activated, and the low R_DS(on) of 2.1 mΩ minimizes thermal dissipation in the headlamp housing where ambient temperatures reach 85 °C. The AEC-Q101 qualification is essential for the automotive lighting reliability requirements and the underhood thermal environment.
Recommandé
Brake-by-Wire Actuator Drive
The IAUA220N08S5N021AUMA1 is well-suited for the H-bridge inverter driving a brake-by-wire hydraulic pump motor. Its 220 A rating supports the high peak current during emergency braking events, while the 2.1 mΩ R_DS(on) limits steady-state thermal rise during normal pedal-modulation cycles. The 80 V V_DS rating ensures survival of 24 V truck-system load-dump transients to 58 V, and AEC-Q101 qualification covers the functional-safety requirements of brake-by-wire systems.
Recommandé
HVAC Blower Motor Control
The IAUA220N08S5N021AUMA1 handles the high-current switching required for HVAC blower motor speed control, where 12 V brushless DC motors can draw 30-80 A continuous. Its 2.1 mΩ R_DS(on) provides high efficiency at full speed, while the 220 A current rating provides ample derating margin for 10+ year automotive service life. The PG-HSOF-5-4 package's exposed pad enables compact PCB layouts suitable for HVAC module integration behind the dashboard.
Recommandé
E-Mobility Motor Controller
The IAUA220N08S5N021AUMA1 is suitable for e-scooter and e-bike traction motor controllers where high peak current is needed for acceleration. The 80 V V_DS rating covers 48 V battery systems with margin, and the 2.1 mΩ R_DS(on) enables peak currents of 200+ A in compact motor housings. The OptiMOS-5 technology's improved figure-of-merit (R_DS(on) × Q_g) reduces switching losses at the 20-50 kHz PWM frequencies typical of e-mobility traction inverters.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUA220N08S5N021AUMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUCN08S7L033ATMA1 | IAUC120N04S6N010ATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|
| Package | PG-HSOF-5-4 (7x8 mm²) | PG-HSOF-5-4 (7x8 mm²) - same | PG-HSOF-5-4 (7x8 mm²) - same | PG-HSOF-5-4 (7x8 mm²) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max | 80 V | 80 V (same) | 40 V (50% lower) | 40 V (50% lower) |
| R_DS(on) | 2.1 mΩ | 1.4 mΩ (~33% lower) | 1.0 mΩ (~52% lower) | 7.6 mΩ (260% higher) |
| Technology Family | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Max Junction Temperature | 175 C | 175 C (same) | 175 C (same) | 175 C (same) |
| Approx. Unit Price (qty 1000) | $2.78 USD | Higher (lower R_DS(on) class) | Lower (lower V_DS class) | Lower (higher R_DS(on)) |
Principaux différenciateurs
- Highest current rating in PG-HSOF-5-4 / 80V OptiMOS-5 family (vs IAUC120N04S6N010ATMA1)
- Optimized 80V V_DS for 24V/48V automotive bus architectures (vs BSC076N04NDATMA1)
- Ultra-low 2.1 mΩ R_DS(on) reduces conduction loss in high-current paths (vs Generic 80V MOSFET competitors)
Notes de conception
At 100 A continuous load with R_DS(on) of 2.1 mΩ, conduction loss is approximately 21 W (P = I² × R). Estimated: with a junction-to-case thermal resistance (R_thJC) of 0.7 C/W (typical for PG-HSOF-5-4), the case-to-ambient thermal resistance must be below 6 C/W to keep Tj below 150 °C at 25 °C ambient. This requires a PCB copper-pour area of at least 100 mm² on the source pad, or an external heatsink. For continuous operation above 150 A, active cooling is recommended.
The PG-HSOF-5-4 package has 5 source-connected pins plus the exposed bottom pad. The PCB land pattern MUST include a continuous copper pour under the exposed pad with thermal vias (0.3 mm drill, 0.5 mm pitch) connecting to inner-plane heat-spreading copper. Use at least 9 thermal vias for 100 mm² copper area. Source-sense connection (Kelvin source) is recommended for the gate-drive return to minimize source-inductance-induced gate ringing at high di/dt switching.
Place the gate driver within 5 mm of the gate pin to minimize gate-loop inductance. Use a 10 Ω gate-source resistor to dampen parasitic oscillations at switching transients. Add a 100 kΩ gate-source pull-down resistor to keep the MOSFET off during controller power-up. The high-current source/drain paths require wide PCB traces (at least 5 mm wide for 100 A) and multiple vias to inner copper planes. Estimated parasitic inductance of a 10 mm wide trace over ground plane is approximately 5 nH per cm.
Do not exceed the absolute maximum V_GS of ±20 V. During turn-off transients, the gate-source voltage can spike beyond the driver supply due to source-inductance coupling; add a gate-source Zener clamp or TVS diode for protection. Verify V_DS stays below 80 V during load-dump and avalanche events - this part is avalanche-rated but repetitive avalanche degrades R_DS(on) over time. For parallel MOSFET operation, screen parts for matched R_DS(on) at the operating current to avoid current hogging.
Informations de conformité
AEC-Q101 automotive-qualified per Infineon datasheet product validation section. AEC-Q100 does not apply (Q100 is for ICs, Q101 is for discrete semiconductors). RoHS and REACH compliant per distributor listings.
