IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
MPN: IAUTN12S5N017ATMA1 ✓ Hoạt độngIAUTN12S5N017ATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled majority-carrier device whose drain current is modulated by the gate-source voltage V<sub>GS</sub>. Once V<sub>GS</sub> exceeds the threshold voltage (typically 2-4 V), a conductive channel forms in the drift region, allowing current to flow from drain to source. The IAUTN12S5N017 belongs to the OptiMOS 5 120 V family, which sits in the broader N-channel MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor taxonomy. The OptiMOS 5 generation uses a trench-gate technology optimised for low R<sub>DS(on)</sub> * figure-of-merit (FOM) and improved switching performance versus prior generations.
Key specifications include R<sub>DS(on)</sub>_max of 1.7 mΩ at V<sub>GS</sub>=10 V, continuous drain current of 314 A at 25 °C case, gate charge Q<sub>g</sub> characterised up to 100 A pulsed drain current, and 175 °C maximum junction temperature. The HSOF-8 package features a large exposed source pad that doubles as the electrical source connection and as a low-thermal-resistance heatsink path, enabling the device to handle high currents on FR4 boards without an external heatsink.
Architecturally, the device uses Infineon's latest-generation trench cell, which minimises both the on-state resistance and the gate-charge capacitance. Compared with the previous OptiMOS 4 generation, this typically yields ~30% lower conduction losses and faster switching at the same R<sub>DS(on)</sub> rating, allowing higher switching frequencies in DC-DC converters and therefore smaller magnetics.
Typical applications include 48 V-12 V HV-LV DC-DC converters in mild-hybrid (48 V) automotive systems, telecom and server intermediate bus converters, high-current motor drives, hot-swap / OR-ing switches in 48 V backplanes, and battery protection / load disconnect circuits. The 120 V drain-source rating provides ample headroom above 48 V nominal buses (with switching transients reaching ~70-80 V).
When designing with this part, place the gate-drive resistor within 5 mm of the gate pad and use a Kelvin-source connection (pin 2 in HSOF-8) to avoid source-inductance-induced gate-oscillation. A gate-drive voltage of 8-10 V is recommended for full enhancement into the 1.7 mΩ region; 4.5 V drive degrades R<sub>DS(on)</sub> significantly.
This page synthesises distributor pricing, drop-in alternatives, and practical thermal design notes not collected in any single manufacturer or distributor product page.
Bộ thay thế dễ dàng lắp đặt cho IAUTN12S5N017ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUTN12S5N017ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Operating Temperature Range, MSL Level, Technology, Mounting Type.
IAUCN10S5L280DATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N06S5L015ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N04S6N009ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N04S6N010ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →VBGQT11202
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC019N04LSTATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUTN12S5N017ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 314 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) |
| Maximum Junction Temperature | 175 °C |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C (junction) |
| Hộp | PG-HSOF-8-1 (HSOF-8, surface mount) |
| Kiểu lắp đặt | Surface Mount |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts |
| Technology | OptiMOS 5 trench MOSFET |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) |
| Trạng thái RoHS | Compliant (per distributor listings) |
| Cấp MSL | 1 (per JEDEC J-STD-020, by package) |
Cấu hình chân IAUTN12S5N017ATMA1
| Chân 1 | G — Gate - gate drive input; tie to gate-driver output through gate resistor |
| Chân 2 | KS — Kelvin Source (sense) - return for gate driver; suppresses source-inductance ringing |
| Chân 3 | S — Source (electrical/thermal) |
| Chân 4 | S — Source (electrical/thermal) |
| Chân 5 | S — Source (electrical/thermal) |
| Chân 6 | S — Source (electrical/thermal) |
| Chân 7 | S — Source (electrical/thermal) |
| Chân 8 | S — Source (electrical/thermal) |
Khu vực hoạt động an toàn (DC, T_C = 25°C)
Ứng dụng tiêu biểu
IAUTN12S5N017ATMA1 phù hợp cho 6 Áp dụngs: 48V Mild-Hybrid HV-LV DC-DC Converter, Telecom and Server Intermediate Bus Converter (IBC), High-Current Motor Drive / H-Bridge Switch, 48V Hot-Swap / OR-ing Switch, Battery Disconnect / Load Switch in 48V Systems, Industrial High-Current Synchronous Rectifier.
48V Mild-Hybrid HV-LV DC-DC Converter
The IAUTN12S5N017ATMA1 is a primary switch candidate for 48 V to 12 V automotive HV-LV DC-DC converters used in 48 V mild-hybrid electrical systems. Its 120 V V<sub>DS</sub> rating covers worst-case 48 V bus transients with substantial margin, and the 1.7 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V minimises conduction loss in the high-current primary-side bridge. The HSOF-8 package's exposed source pad provides direct PCB-copper heatsinking, enabling 200-300 A peak switching currents without an external heatsink. Designers should target a switching frequency of 100-200 kHz to balance magnetics size against switching losses, and place the gate drive within 5 mm of pin 1 (Gate) using the pin 2 Kelvin source for the gate-driver return path to suppress source-inductance-induced ringing.
Được đề xuất
Telecom and Server Intermediate Bus Converter (IBC)
In 48 V telecom and hyperscale server intermediate bus converters, the IAUTN12S5N017ATMA1 can serve as the primary-side high-voltage switch in a fixed-ratio LLC or hard-switched buck topology converting 48 V to a 12 V or 6 V intermediate bus. The 1.7 mΩ R<sub>DS(on)</sub> reduces full-load conduction loss and improves efficiency at the 30-50 A typical IBC output current level, while the 175 °C junction rating provides headroom during thermal stress events. The HSOF-8 footprint is compatible with high-density surface-mount manufacturing. For best results in this topology, derate to ~30-40 A continuous PCB current and use a 4-layer PCB with at least 2 oz copper on top/bottom layers to spread heat from the exposed source pad.
Được đề xuất
High-Current Motor Drive / H-Bridge Switch
The IAUTN12S5N017ATMA1 can be used as the high-side or low-side switch in a 48 V brushless DC (BLDC) or permanent-magnet motor drive H-bridge. Its 314 A continuous current rating supports peak motor-startup torque, and the 120 V V<sub>DS</sub> rating covers the back-EMF generated during fast motor deceleration at 48 V bus. The HSOF-8 package allows four MOSFETs to be placed side-by-side on the PCB in a compact full-bridge layout. A 10-15 kHz PWM switching frequency is typical for motor drives, well within the device's switching capability. Use a dedicated gate driver with integrated dead-time generation (e.g. IR2109SPBF family) and ensure the Kelvin source pin is bonded directly to the gate-driver ground reference.
Được đề xuất
48V Hot-Swap / OR-ing Switch
In 48 V server backplanes and telecom shelves, the IAUTN12S5N017ATMA1 functions as a hot-swap or OR-ing switch controlling the inrush current when a card is inserted into a live 48 V bus. Its 1.7 mΩ R<sub>DS(on)</sub> produces minimal steady-state voltage drop at 30-50 A load currents, and the 120 V V<sub>DS</sub> rating handles the worst-case bus voltage during transient load-dump events. The 175 °C junction temperature provides headroom for the brief inrush thermal spike. Drive the gate with a controlled dV/dt circuit (gate resistor plus timing capacitor) to limit inrush current to a safe value; pair with a hot-swap controller such as the TLD5097EPXUMA1 for full protection.
Được đề xuất
Battery Disconnect / Load Switch in 48V Systems
The IAUTN12S5N017ATMA1 is suitable as a battery-side disconnect switch or load switch in 48 V battery packs and energy-storage modules. Its low R<sub>DS(on)</sub> reduces continuous power dissipation in the main current path - critical for battery runtime - and its 120 V rating handles the worst-case transients seen during battery pack switching and inverter kickback. The automotive-grade qualification (per Infineon part page) makes it attractive for mild-hybrid and EV 48 V subsystems. A simple gate-drive scheme with a 10 V enhancement supply and a slow-discharge pull-down provides safe fail-off behaviour; add a TVS across drain-source for inductive load protection.
Được đề xuất
Industrial High-Current Synchronous Rectifier
In high-current (>100 A) industrial synchronous rectifier stages for 48 V-input telecom or solar MPPT converters, the IAUTN12S5N017ATMA1 can be used as the low-side synchronous rectifier when the operating voltage stays below 100 V. Its 1.7 mΩ R<sub>DS(on)</sub> matches or beats Schottky diode forward drops at high current, eliminating rectifier conduction loss entirely in hard-switched topologies. The HSOF-8 footprint enables dense paralleling for higher current applications. Drive with a synchronous-rectifier controller that senses drain voltage to optimise dead-time; the Kelvin source pin enables fast, accurate drain-voltage sensing for optimum efficiency.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUTN12S5N017ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN10S5L280DATMA1 | IAUC120N06S5L015ATMA1 | IAUC120N04S6N009ATMA1 | VBGQT11202 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-HSOF-8-1 | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same |
| Drain-Source Voltage (V_DS) | 120 V | 120 V | 120 V | 120 V | 120 V |
| On-Resistance R_DS(on) @ 10V | 1.7 mΩ | 2.8 mΩ (+65%) | 1.5 mΩ (-12%) | 0.9 mΩ (-47%) | similar to 1.7 mΩ class |
| Continuous Drain Current (T_C=25°C) | 314 A | per datasheet | per datasheet | per datasheet | per VBsemi datasheet |
| Technology Family | OptiMOS 5 (trench) | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | Trench (VBsemi) |
Bảo phân biệt quan trọng
- Lowest R<sub>DS(on)</sub> in the OptiMOS 5 120V HSOF-8 family (vsIAUCN10S5L280DATMA1)
- Optimised gate-charge vs conduction-loss trade-off (vsIAUC120N06S5L015ATMA1)
- Automotive-qualified OptiMOS 5 platform (vsVBGQT11202 (VBsemi cross-brand))
- Industry-standard HSOF-8 footprint shared across multiple Infineon parts (vsCustom-package competitors)
Ghi chú thiết kế
Estimated: at 50 A continuous PCB current, R<sub>DS(on)</sub>=1.7 mΩ, and T<sub>A</sub>=85 °C, the part dissipates approximately 4.25 W of conduction loss in a 48 V application. On a 2 oz copper 4-layer PCB with 1 sq.in. heatsink area on the exposed source pad, the package's R<sub>θJA</sub> is approximately 35-40 °C/W, giving a junction temperature rise of ~150-170 °C above ambient. This leaves very little thermal margin at full load - use an even larger copper area (≥2 sq.in.) or forced-air cooling for continuous operation. Verified thermal resistance figures must be cross-checked against the Infineon application note for the PG-HSOF-8-1 package.
Use the Kelvin-source pin (pin 2) as the gate-driver return to suppress source-inductance-induced gate ringing. Place the gate-drive resistor within 5 mm of pin 1 (Gate), and keep the gate-driver loop area (gate-drive resistor → gate → kelvin-source → back to driver ground) under 0.5 cm². Route the high-current source and drain copper directly from the exposed pads on top/bottom layers with multiple parallel vias. Place input capacitors as close as possible to the drain pad; in synchronous-rectifier topologies, minimise the high-side-to-low-side source-pad copper overlap to reduce capacitive coupling.
Recommended PCB land pattern: source pads 3-8 should be merged into a single large copper pour that doubles as the thermal pad; the drain pad is on the opposite (bottom) side connected via thermal vias. Use at least 9-12 thermal vias (0.3 mm drill, 0.6 mm pad, 1 mm pitch) under the source pad to conduct heat to internal copper planes. Solder paste stencil should be 0.15-0.20 mm thick for the main pads; a slightly thinner stencil (0.12 mm) helps reduce solder voiding on the large thermal pad (typical voiding target: <25% of pad area per IPC-7530).
Critical pitfalls to avoid: (1) driving the gate below 8 V at full load - R<sub>DS(on)</sub> rises sharply below V<sub>GS</sub>=6.5 V and the part will thermally runaway; (2) neglecting avalanche energy in inductive switching - this part is avalanche-rated but operating beyond E<sub>AS</sub> will degrade R<sub>DS(on)</sub> over time; (3) placing the gate-driver return at the wrong source pad - this defeats the Kelvin connection and causes gate-oscillation at high dV/dt; (4) using a single 1 oz copper layer for the source pad - the part's thermal performance is dominated by the PCB copper area, not the silicon itself.
To control EMI in 48 V DC-DC converters using this part: (1) use a 4-10 Ω gate resistor with optional ferrite bead to slow the gate-edge dV/dt; (2) place a small RC snubber (1-10 Ω + 1-10 nF) across drain-source if ringing exceeds 20% of V<sub>DS</sub>; (3) keep the switching-node copper area minimal to reduce parasitic capacitance; (4) use a gate-driver with split turn-on/turn-off gate resistors to independently control dV/dt and dI/dt; (5) consider spread-spectrum frequency modulation in the controller to flatten the EMI spectrum by 10-15 dB.
Thông tin tuân thủ
RoHS compliant per distributor listings (DigiKey, Mouser). AEC-Q101 (automotive MOSFET standard, equivalent for discrete semiconductors) expected for the OptiMOS 5 120 V family per Infineon automotive product page. AEC-Q100 specifically applies to ICs, not discrete MOSFETs - so AEC-Q100 is marked not_applicable here; the relevant automotive standard for this discrete MOSFET is AEC-Q101.
