IKB20N60H3ATMA1 - 600V 20A TRENCHSTOP™ IGBT3 D2PAK | Infineon
MPN: IKB20N60H3ATMA1 ✓ Hoạt độngIKB20N60H3ATMA1 Tóm tắt
An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the high input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. IGBTs sit in the power-converter device hierarchy as: IGBT -> power transistor -> discrete semiconductor -> power management building block. They are the workhorse switches in hard-switched power conversion between roughly 400 V and 1700 V, where MOSFETs become inefficient and thyristors cannot be self-commutated. The TRENCHSTOP™ IGBT3 generation adds a thin-wafer trench field-stop cell that shrinks Eoff and VCE(sat) simultaneously versus the older NPT (Non-Punch-Through) generation.
The headline characteristics of the IKB20N60H3ATMA1 include a 600 V collector-emitter breakdown rating, a 20 A nominal collector current (40 A pulsed per the distributor listings), and a co-packed single anti-parallel diode that handles the inductive free-wheeling current. Its key differentiator versus standard 600 V IGBTs is MOSFET-like turn-off behavior: a clean current tail with low Eoff, which lets designers raise switching frequency without paying a thermal penalty. The part also includes a diode with controlled diF/dt = 1000 A/μs reverse-recovery softness for low EMI in motor drives.
Architecturally, the IGBT3 die uses a punch-through field-stop buffer layer and trench-gate cell, which keeps VCE(sat) low at high current density and reduces turn-off losses by roughly 20-30% versus the previous IKB20N60H2 generation. The co-packaged EmCon3 free-wheeling diode is a monolithically integrated emitter-controlled structure that matches the IGBT switching speed, enabling low reverse-recovery charge (Qrr) and therefore low switching losses in continuous hard-switched PWM.
Typical applications include uninterruptible power supplies (UPS), photovoltaic string and micro-inverters, welding inverters, server and telecom SMPS power factor correction (PFC) stages, induction-heating resonant converters, and industrial motor drives from 0.5 kW to 5 kW. The D2PAK surface-mount package enables high-volume automated assembly while maintaining a creepage distance compatible with reinforced insulation when an RTV-filled PCB slot is provided under the tab.
When designing with this part, observe the maximum 175°C virtual junction temperature and derate switching losses against the actual case-to-ambient thermal resistance of the PCB footprint. The exposed tab must be soldered to a minimum copper area (typically ≥ 6 cm² on FR-4 with 2 oz copper) to keep RthJA below 40 K/W at full load. A gate drive of +15 V Vge with a -5 V to -8 V negative turn-off bias is recommended to prevent parasitic turn-on in bridge topologies.
This page synthesizes distributor pricing, drop-in alternatives in the same D2PAK footprint, and practical thermal/layout design notes that go beyond the headline datasheet block diagram.
Bộ thay thế dễ dàng lắp đặt cho IKB20N60H3ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
IKB20N60H3ATMA2
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKP20N60H3XKSA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STGB20M65DF2
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STGB19M65DF2
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FGH40N60SMD
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKB20N60H3ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series / Generation | TRENCHSTOP™ IGBT3 |
| Kiểu transitor | IGBT with anti-parallel diode (co-packed) |
| Collector-Emitter Voltage (VCES) | 600 V |
| Nominal Collector Current (IC, TC=25°C) | 20 A |
| Pulsed Collector Current (ICpuls) | 40 A |
| Total Power Dissipation (Ptot) | 170 W |
| N Nap-Emit (Vce(sat)) | 1.95 V (per Newark listing; typical IC=20A, VGE=15V) |
| Operating Junction Temperature (Tvj) | -40°C to +175°C |
| Hộp | PG-TO263-3 (D2PAK), surface mount |
| Kiểu lắp đặt | Surface Mount (D2PAK tab acts as Collector) |
| Configuration | Single IGBT + co-packed diode |
| Trạng thái RoHS | Compliant |
| Switching Class | Hard-switching optimized |
| Delivery Form | Tape & Reel (suffix ATMA1) |
Cấu hình chân IKB20N60H3ATMA1
| Chân 1 | Gate (G) — Gate control input; drive with +15V on, -5V to -8V off for bridge topologies |
| Chân 2 | Collector (C) — Collector terminal; internally bonded to the metal tab on the package bottom |
| Chân 3 | Emitter (E) — Emitter terminal; reference for gate drive and Kelvin connection point |
| Chân Tab | Collector (C) — Metal bottom tab; electrically connected to Pin 2 (Collector); serves as primary thermal dissipation path |
Khu vực hoạt động an toàn (Forward-Bias SOA)
Ứng dụng tiêu biểu
IKB20N60H3ATMA1 phù hợp cho 6 Áp dụngs: Solar String / Micro-Inverters, Uninterruptible Power Supplies (UPS), Welding Inverter Output Stage, Industrial Motor Drives (1-3 kW), Power Factor Correction (PFC) Boost Stage, Induction Heating Resonant Converter.
Solar String / Micro-Inverters
The IKB20N60H3ATMA1's 600 V VCES and 20 A continuous current rating fit solar string and micro-inverters in the 1-3 kW power range with a 400 V DC bus. Its 1.95 V VCE(sat) keeps conduction losses below 2% at full load, while the TRENCHSTOP IGBT3 architecture reduces Eoff by 20-30% versus older NPT IGBTs. The co-packaged EmCon3 diode handles high-side free-wheeling with soft reverse recovery for low EMI. The D2PAK surface-mount package enables automated high-volume assembly and a low 4.5 mm board profile.
Được đề xuất
Uninterruptible Power Supplies (UPS)
In a 1-5 kW double-conversion UPS, the IKB20N60H3ATMA1 serves as the inverter switch between the DC bus and the low-frequency transformer. Its 600 V rating provides margin above the rectified 400 V bus, and the hard-switching-optimized TRENCHSTOP IGBT3 die minimizes switching losses at 16-25 kHz PWM. The 170 W power dissipation rating supports continuous operation at the rated 20 A collector current with adequate PCB copper. Co-packaged diode eliminates the need for an external anti-parallel rectifier.
Được đề xuất
Welding Inverter Output Stage
The IKB20N60H3ATMA1's 40 A pulsed current capability and 175°C junction rating suit welding inverter full-bridge output stages that see repetitive short-circuit surges. The MOSFET-like turn-off behavior of TRENCHSTOP IGBT3 keeps Eoff low during the hard-commutation events typical of arc-strike transients. The 1.95 V VCE(sat) limits conduction losses during the sustained-arc welding current. Surface-mount D2PAK simplifies the inverter PCB and allows automated production, which is critical for cost-competitive consumer welding equipment.
Được đề xuất
Industrial Motor Drives (1-3 kW)
Variable-frequency drives for 1-3 kW three-phase induction motors use the IKB20N60H3ATMA1 in the 600 V inverter leg. Its 20 A continuous collector current drives motors up to roughly 2.2 kW without paralleling devices. The co-packaged diode and trench-gate cell provide low reverse-recovery charge for the motor's inductive load, reducing DC-bus ringing. The D2PAK package's exposed tab provides a low-resistance collector path and direct PCB thermal dissipation for natural-convection-cooled industrial enclosures.
Được đề xuất
Power Factor Correction (PFC) Boost Stage
In a continuous-conduction-mode (CCM) PFC boost converter operating from 85-265 VAC, the IKB20N60H3ATMA1 can serve as the boost switch when the DC-link voltage is held at 400 V and switching frequency is in the 16-32 kHz range. Its 600 V VCES provides comfortable margin above the 400 V link plus 20% transient overshoot. The 1.95 V VCE(sat) is competitive with superjunction MOSFETs at this voltage class, and the co-packaged diode handles the boost inductor's reverse current. Below ~2 kW, the IKB20N60H3ATMA1 outperforms 600 V MOSFETs on cost-per-amp.
Được đề xuất
Induction Heating Resonant Converter
Although primarily specified for hard switching, the IKB20N60H3ATMA1 is widely used in induction-heating quasi-resonant ZVS/ZCS bridges operating at 20-50 kHz. The MOSFET-like turn-off tail of TRENCHSTOP IGBT3 helps achieve clean zero-voltage switching of the high-side device, while the 40 A pulsed rating supports the resonant current peaks typical of induction-coil loads. The 175°C junction temperature enables operation at elevated ambient temperatures found in industrial kitchen or forge applications.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IKB20N60H3ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IKB20N60H3ATMA2 | IKP20N60H3XKSA1 | STGB20M65DF2 | STGB19M65DF2 | FGH40N60SMD |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | STMicroelectronics | onsemi |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) |
| VCES (Collector-Emitter Voltage) | 600 V | 600 V | 600 V | 650 V | 650 V | 600 V |
| IC (Continuous Collector Current) | 20 A | 20 A | 20 A | 20 A | 19 A | 40 A |
| ICpuls (Pulsed Collector Current) | 40 A | 40 A | 40 A | 40 A | 38 A | 80 A |
| VCE(sat) (Typical) | 1.95 V | 1.95 V | 1.95 V | 2.0 V | 2.1 V | 1.9 V |
| Total Power Dissipation (Ptot) | 170 W | 170 W | 170 W | 150 W | 150 W | 250 W |
| Operating Junction Temperature | +175 °C | +175 °C | +175 °C | +175 °C | +175 °C | +150 °C |
| Co-packed Diode | Yes (EmCon3) | Yes (EmCon3) | Yes (EmCon3) | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- TRENCHSTOP™ IGBT3 with MOSFET-like turn-off behavior (vsFGH40N60SMD (onsemi))
- Co-packaged EmCon3 free-wheeling diode with controlled softness (vsSTGB20M65DF2 (STMicroelectronics))
- Surface-mount D2PAK package enables automated assembly (vsIKP20N60H3 (TO-220 through-hole))
Ghi chú thiết kế
Estimated: at IC=15A continuous, VCE(sat)=1.95V, the IKB20N60H3ATMA1 dissipates roughly Pcond = IC × VCE(sat) = 15 × 1.95 = 29.25 W of conduction loss. Adding ~4 W of switching loss at 20 kHz PWM gives ~33 W total. With the D2PAK tab soldered to 6 cm² of 2 oz copper on FR-4, the thermal resistance RthJA is approximately 40 K/W, resulting in a junction temperature rise ΔTj = P × RthJA = 33 × 40 = 1320°C above a 25°C ambient (so Tj ≈ 157°C). This is below the 175°C maximum but leaves only 18°C margin - derate to 12A continuous or add a clip-on heatsink with thermal interface material to reduce RthJA below 20 K/W.
Solder the D2PAK bottom tab directly to a copper pour of at least 6 cm² on the top layer, with thermal vias (≥ 9 vias of 0.3 mm diameter) connecting to an inner plane. The collector pin (Pin 2) must carry the full load current, so use a wide trace (≥ 2 mm of 2 oz copper) from Pin 2 to the DC-link capacitor. Keep the gate-drive loop area under 1 cm² by routing the gate-emitter return trace directly between Pin 1 (Gate) and Pin 3 (Emitter); never use the power-emitter path as the gate-return, as this causes inductive voltage spikes that can exceed VGE(th) and cause parasitic turn-on.
Three common pitfalls when designing with the IKB20N60H3ATMA1: (1) Forgetting the negative gate-off bias - in half-bridge topologies, the high-side IGBT can parasitic-turn-on due to Miller capacitance, causing shoot-through. Always use -5V to -8V on the gate during off-state via a gate-driver IC like the 1ED020I12B2XUMA1 or IR2304SPBF. (2) Exceeding dV/dt during turn-off - keep the gate resistor RG between 10Ω and 47Ω; smaller values produce ringing above 600V and can exceed VCES. (3) Insufficient heatsinking - the D2PAK cannot dissipate the full 170 W without a substantial heatsink or PCB copper area; never rely on the part's Ptot rating in air without thermal management.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Standard grade - not AEC-Q100 automotive qualified; for automotive applications, consider IKP20N60H3XKSA1 (AEC-Q101). Halogen-free status not explicitly stated in provided web data; defaulted to 'unknown'.
