IKB20N60H3ATMA1 - 600V 20A TRENCHSTOP™ IGBT3 D2PAK | Infineon
MPN: IKB20N60H3ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.1 | $3.10 |
| 10 | $2.78 | $27.80 |
| 100 | $2.32 | $232.00 |
| 500 | $1.96 | $980.00 |
| 1,000 | $1.65 | $1,650.00 |
IKB20N60H3ATMA1 Overview
An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the high input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. IGBTs sit in the power-converter device hierarchy as: IGBT -> power transistor -> discrete semiconductor -> power management building block. They are the workhorse switches in hard-switched power conversion between roughly 400 V and 1700 V, where MOSFETs become inefficient and thyristors cannot be self-commutated. The TRENCHSTOP™ IGBT3 generation adds a thin-wafer trench field-stop cell that shrinks Eoff and VCE(sat) simultaneously versus the older NPT (Non-Punch-Through) generation.
The headline characteristics of the IKB20N60H3ATMA1 include a 600 V collector-emitter breakdown rating, a 20 A nominal collector current (40 A pulsed per the distributor listings), and a co-packed single anti-parallel diode that handles the inductive free-wheeling current. Its key differentiator versus standard 600 V IGBTs is MOSFET-like turn-off behavior: a clean current tail with low Eoff, which lets designers raise switching frequency without paying a thermal penalty. The part also includes a diode with controlled diF/dt = 1000 A/μs reverse-recovery softness for low EMI in motor drives.
Architecturally, the IGBT3 die uses a punch-through field-stop buffer layer and trench-gate cell, which keeps VCE(sat) low at high current density and reduces turn-off losses by roughly 20-30% versus the previous IKB20N60H2 generation. The co-packaged EmCon3 free-wheeling diode is a monolithically integrated emitter-controlled structure that matches the IGBT switching speed, enabling low reverse-recovery charge (Qrr) and therefore low switching losses in continuous hard-switched PWM.
Typical applications include uninterruptible power supplies (UPS), photovoltaic string and micro-inverters, welding inverters, server and telecom SMPS power factor correction (PFC) stages, induction-heating resonant converters, and industrial motor drives from 0.5 kW to 5 kW. The D2PAK surface-mount package enables high-volume automated assembly while maintaining a creepage distance compatible with reinforced insulation when an RTV-filled PCB slot is provided under the tab.
When designing with this part, observe the maximum 175°C virtual junction temperature and derate switching losses against the actual case-to-ambient thermal resistance of the PCB footprint. The exposed tab must be soldered to a minimum copper area (typically ≥ 6 cm² on FR-4 with 2 oz copper) to keep RthJA below 40 K/W at full load. A gate drive of +15 V Vge with a -5 V to -8 V negative turn-off bias is recommended to prevent parasitic turn-on in bridge topologies.
This page synthesizes distributor pricing, drop-in alternatives in the same D2PAK footprint, and practical thermal/layout design notes that go beyond the headline datasheet block diagram.
Drop-in alternatives for IKB20N60H3ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IKB20N60H3ATMA2
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IKP20N60H3XKSA1
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STGB20M65DF2
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STGB19M65DF2
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FGH40N60SMD
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IKB20N60H3ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series / Generation | TRENCHSTOP™ IGBT3 |
| Transistor Type | IGBT with anti-parallel diode (co-packed) |
| Collector-Emitter Voltage (VCES) | 600 V |
| Nominal Collector Current (IC, TC=25°C) | 20 A |
| Pulsed Collector Current (ICpuls) | 40 A |
| Total Power Dissipation (Ptot) | 170 W |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.95 V (per Newark listing; typical IC=20A, VGE=15V) |
| Operating Junction Temperature (Tvj) | -40°C to +175°C |
| Package | PG-TO263-3 (D2PAK), surface mount |
| Mounting Type | Surface Mount (D2PAK tab acts as Collector) |
| Configuration | Single IGBT + co-packed diode |
| RoHS Status | Compliant |
| Switching Class | Hard-switching optimized |
| Delivery Form | Tape & Reel (suffix ATMA1) |
IKB20N60H3ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate control input; drive with +15V on, -5V to -8V off for bridge topologies |
| Pin 2 | Collector (C) — Collector terminal; internally bonded to the metal tab on the package bottom |
| Pin 3 | Emitter (E) — Emitter terminal; reference for gate drive and Kelvin connection point |
| Pin Tab | Collector (C) — Metal bottom tab; electrically connected to Pin 2 (Collector); serves as primary thermal dissipation path |
Safe Operating Area (Forward-Bias SOA)
Typical Applications
IKB20N60H3ATMA1 is suitable for 6 applications: Solar String / Micro-Inverters, Uninterruptible Power Supplies (UPS), Welding Inverter Output Stage, Industrial Motor Drives (1-3 kW), Power Factor Correction (PFC) Boost Stage, Induction Heating Resonant Converter.
Solar String / Micro-Inverters
The IKB20N60H3ATMA1's 600 V VCES and 20 A continuous current rating fit solar string and micro-inverters in the 1-3 kW power range with a 400 V DC bus. Its 1.95 V VCE(sat) keeps conduction losses below 2% at full load, while the TRENCHSTOP IGBT3 architecture reduces Eoff by 20-30% versus older NPT IGBTs. The co-packaged EmCon3 diode handles high-side free-wheeling with soft reverse recovery for low EMI. The D2PAK surface-mount package enables automated high-volume assembly and a low 4.5 mm board profile.
Recommended
Uninterruptible Power Supplies (UPS)
In a 1-5 kW double-conversion UPS, the IKB20N60H3ATMA1 serves as the inverter switch between the DC bus and the low-frequency transformer. Its 600 V rating provides margin above the rectified 400 V bus, and the hard-switching-optimized TRENCHSTOP IGBT3 die minimizes switching losses at 16-25 kHz PWM. The 170 W power dissipation rating supports continuous operation at the rated 20 A collector current with adequate PCB copper. Co-packaged diode eliminates the need for an external anti-parallel rectifier.
Recommended
Welding Inverter Output Stage
The IKB20N60H3ATMA1's 40 A pulsed current capability and 175°C junction rating suit welding inverter full-bridge output stages that see repetitive short-circuit surges. The MOSFET-like turn-off behavior of TRENCHSTOP IGBT3 keeps Eoff low during the hard-commutation events typical of arc-strike transients. The 1.95 V VCE(sat) limits conduction losses during the sustained-arc welding current. Surface-mount D2PAK simplifies the inverter PCB and allows automated production, which is critical for cost-competitive consumer welding equipment.
Recommended
Industrial Motor Drives (1-3 kW)
Variable-frequency drives for 1-3 kW three-phase induction motors use the IKB20N60H3ATMA1 in the 600 V inverter leg. Its 20 A continuous collector current drives motors up to roughly 2.2 kW without paralleling devices. The co-packaged diode and trench-gate cell provide low reverse-recovery charge for the motor's inductive load, reducing DC-bus ringing. The D2PAK package's exposed tab provides a low-resistance collector path and direct PCB thermal dissipation for natural-convection-cooled industrial enclosures.
Recommended
Power Factor Correction (PFC) Boost Stage
In a continuous-conduction-mode (CCM) PFC boost converter operating from 85-265 VAC, the IKB20N60H3ATMA1 can serve as the boost switch when the DC-link voltage is held at 400 V and switching frequency is in the 16-32 kHz range. Its 600 V VCES provides comfortable margin above the 400 V link plus 20% transient overshoot. The 1.95 V VCE(sat) is competitive with superjunction MOSFETs at this voltage class, and the co-packaged diode handles the boost inductor's reverse current. Below ~2 kW, the IKB20N60H3ATMA1 outperforms 600 V MOSFETs on cost-per-amp.
Recommended
Induction Heating Resonant Converter
Although primarily specified for hard switching, the IKB20N60H3ATMA1 is widely used in induction-heating quasi-resonant ZVS/ZCS bridges operating at 20-50 kHz. The MOSFET-like turn-off tail of TRENCHSTOP IGBT3 helps achieve clean zero-voltage switching of the high-side device, while the 40 A pulsed rating supports the resonant current peaks typical of induction-coil loads. The 175°C junction temperature enables operation at elevated ambient temperatures found in industrial kitchen or forge applications.
Recommended
Recommended Products Summary
Engineering reference data for IKB20N60H3ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKB20N60H3ATMA2 | IKP20N60H3XKSA1 | STGB20M65DF2 | STGB19M65DF2 | FGH40N60SMD |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | STMicroelectronics | onsemi |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) |
| VCES (Collector-Emitter Voltage) | 600 V | 600 V | 600 V | 650 V | 650 V | 600 V |
| IC (Continuous Collector Current) | 20 A | 20 A | 20 A | 20 A | 19 A | 40 A |
| ICpuls (Pulsed Collector Current) | 40 A | 40 A | 40 A | 40 A | 38 A | 80 A |
| VCE(sat) (Typical) | 1.95 V | 1.95 V | 1.95 V | 2.0 V | 2.1 V | 1.9 V |
| Total Power Dissipation (Ptot) | 170 W | 170 W | 170 W | 150 W | 150 W | 250 W |
| Operating Junction Temperature | +175 °C | +175 °C | +175 °C | +175 °C | +175 °C | +150 °C |
| Co-packed Diode | Yes (EmCon3) | Yes (EmCon3) | Yes (EmCon3) | Yes | Yes | Yes |
Key Differentiators
- TRENCHSTOP™ IGBT3 with MOSFET-like turn-off behavior (vs FGH40N60SMD (onsemi))
- Co-packaged EmCon3 free-wheeling diode with controlled softness (vs STGB20M65DF2 (STMicroelectronics))
- Surface-mount D2PAK package enables automated assembly (vs IKP20N60H3 (TO-220 through-hole))
Design Notes
Estimated: at IC=15A continuous, VCE(sat)=1.95V, the IKB20N60H3ATMA1 dissipates roughly Pcond = IC × VCE(sat) = 15 × 1.95 = 29.25 W of conduction loss. Adding ~4 W of switching loss at 20 kHz PWM gives ~33 W total. With the D2PAK tab soldered to 6 cm² of 2 oz copper on FR-4, the thermal resistance RthJA is approximately 40 K/W, resulting in a junction temperature rise ΔTj = P × RthJA = 33 × 40 = 1320°C above a 25°C ambient (so Tj ≈ 157°C). This is below the 175°C maximum but leaves only 18°C margin - derate to 12A continuous or add a clip-on heatsink with thermal interface material to reduce RthJA below 20 K/W.
Solder the D2PAK bottom tab directly to a copper pour of at least 6 cm² on the top layer, with thermal vias (≥ 9 vias of 0.3 mm diameter) connecting to an inner plane. The collector pin (Pin 2) must carry the full load current, so use a wide trace (≥ 2 mm of 2 oz copper) from Pin 2 to the DC-link capacitor. Keep the gate-drive loop area under 1 cm² by routing the gate-emitter return trace directly between Pin 1 (Gate) and Pin 3 (Emitter); never use the power-emitter path as the gate-return, as this causes inductive voltage spikes that can exceed VGE(th) and cause parasitic turn-on.
Three common pitfalls when designing with the IKB20N60H3ATMA1: (1) Forgetting the negative gate-off bias - in half-bridge topologies, the high-side IGBT can parasitic-turn-on due to Miller capacitance, causing shoot-through. Always use -5V to -8V on the gate during off-state via a gate-driver IC like the 1ED020I12B2XUMA1 or IR2304SPBF. (2) Exceeding dV/dt during turn-off - keep the gate resistor RG between 10Ω and 47Ω; smaller values produce ringing above 600V and can exceed VCES. (3) Insufficient heatsinking - the D2PAK cannot dissipate the full 170 W without a substantial heatsink or PCB copper area; never rely on the part's Ptot rating in air without thermal management.
Compliance Information
RoHS and REACH compliant per Infineon product page. Standard grade - not AEC-Q100 automotive qualified; for automotive applications, consider IKP20N60H3XKSA1 (AEC-Q101). Halogen-free status not explicitly stated in provided web data; defaulted to 'unknown'.
