IKW50N65H5FKSA1 - 650V 50A IGBT Single | Infineon TO-247
MPN: IKW50N65H5FKSA1 ✓ Hoạt độngIKW50N65H5FKSA1 Tóm tắt
An IGBT (Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the high input impedance of a MOSFET gate with the low conduction losses of a bipolar transistor, sitting in the power-semiconductor hierarchy between MOSFETs (lower power, faster) and thyristors (higher current, slower). The IKW50N65H5FKSA1 targets hard-switched PFC, inverter, and welding-converter stages where 650 V breakdown voltage and 50 A nominal current define the typical 5-15 kW power-class envelope.
Key features include a collector-emitter saturation voltage VCE(sat) of 1.65 V at IC = 50 A (per the LCSC listing and FindIC summary), a built-in anti-parallel diode for half-bridge and full-bridge use, and low switching losses suitable for 20-50 kHz hard-switched converters. The trench-gate TRENCHSTOP 5 cell technology reduces conduction losses versus planar NPT predecessors, while the co-packaged diode is optimized for low Qrr and soft recovery to limit reverse-recovery losses in bridge configurations.
Typical applications span solar inverters, industrial motor controllers, UPS systems, induction heating, and welding converters. The wide 650 V rating provides adequate derating margin for 400 V rectified-mains and PFC boost stages, while the 50 A continuous current supports three-phase motor drives up to roughly 15 kW without paralleling. The TO-247 package offers low thermal resistance and screw-mount compatibility for heatsink attachment.
Design with VGE = 15 V for full rated current and use a gate resistor of 10-47 ohm to control di/dt. Ensure junction temperature stays below 175 C with adequate heatsinking. This page synthesizes distributor pricing, TO-247 drop-in alternatives, and practical thermal design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IKW50N65H5FKSA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IKW50N65H5FKSA1 (cùng hình factor và footprint) — khác nhau ở RoHS Status.
IKQ50N65EH5
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKW50N65ES5XKSA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STGW60H65DFB
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IXYH40N65C3H1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRGP6650DPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKW50N65H5FKSA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Type | IGBT Single Transistor |
| Technology | TRENCHSTOP 5 (H5 high-speed family) |
| Collector-Emitter Voltage (VCE) | 650 V |
| Continuous Collector Current (IC, TC=25C) | 80 A |
| Continuous Collector Current (IC, TC=100C) | 50 A |
| Maximum Power Dissipation (Ptot) | 305 W |
| N Nap-Emit (Vce(sat)) | 1.65 V at IC = 50 A |
| Gate-Emitter Voltage (VGE) max | 20 V (typical rating) |
| Built-in Diode | Yes, anti-parallel co-packaged diode |
| Operating Junction Temperature (Tj) | -40 C to +175 C (typical IGBT max) |
| Hộp | TO-247 (PG-TO247-3), 3 pins |
| Kiểu lắp đặt | Through Hole |
| Packing | Tube (240 pcs/tube per Infineon product page) |
| Trạng thái RoHS | Compliant (per Infineon) |
| Trạng thái vòng đời | Active (per Infineon product page) |
Cấu hình chân IKW50N65H5FKSA1
| Chân 1 | Gate — Gate control input; standard 15V drive |
| Chân 2 | Collector — Power collector (also connected to metal tab) |
| Chân 3 | Emitter — Power emitter return |
Khu vực hoạt động an toàn (DC, VGE = 15V, TC = 25C)
Ứng dụng tiêu biểu
IKW50N65H5FKSA1 phù hợp cho 6 Áp dụngs: Solar String Inverter PFC Boost Stage, Industrial Variable-Frequency Motor Drive, Uninterruptible Power Supply (UPS) Inverter, Induction Heating Resonant Converter, Welding Converter Power Stage, EV Onboard Charger PFC Stage (Industrial/Stationary).
Solar String Inverter PFC Boost Stage
The IKW50N65H5FKSA1 fits solar string inverter PFC boost stages where 650 V VCE rating handles 400 V rectified-mains bus with ample switching-transient margin. Its 50 A continuous current at TC = 100 C supports 10-15 kW single-channel inverters, while the TRENCHSTOP 5 H5 family delivers low VCE(sat) of 1.65 V at 50 A for high-efficiency hard-switched boost operation. The co-packaged anti-parallel diode eliminates the need for an external boost rectifier, reducing BOM cost and PCB area. Engineers typically pair this IGBT with a UCC21750 gate driver and run at 16-32 kHz switching frequency to balance magnetics size against switching loss.
Được đề xuất
Industrial Variable-Frequency Motor Drive
In three-phase 400 V industrial VFDs up to 15 kW, the IKW50N65H5FKSA1 serves as the inverter-leg IGBT with its 650 V VCE providing sufficient headroom above the 565 V DC-bus peak. The 80 A IC at TC = 25 C and 50 A at TC = 100 C support continuous three-phase output without paralleling devices, while the co-packaged diode handles motor-regeneration free-wheeling current. Its 305 W Ptot budget and TO-247 thermal performance simplify heatsink selection, and the 20 V VGE max rating is compatible with standard 15 V gate-drive supplies from drivers like the IR21064STRPBF.
Được đề xuất
Uninterruptible Power Supply (UPS) Inverter
Double-conversion UPS systems in the 5-15 kW range leverage the IKW50N65H5FKSA1 in the inverter bridge that converts the 384 V DC bus to 230 V AC mains output. The 650 V VCE rating derates comfortably to 400 V bus operation, and the 50 A continuous current supports 230 V x 30 A continuous three-phase or single-phase-with-neutral inverter legs. The H5 family tuning reduces switching losses in hard-switched IGBT bridges at the typical 16-20 kHz UPS PWM frequency. The built-in anti-parallel diode simplifies the bridge layout and is qualified for the continuous free-wheeling currents encountered during overload transients.
Được đề xuất
Induction Heating Resonant Converter
Induction-heating cooktops and industrial IH heaters operating at 20-50 kHz benefit from the IKW50N65H5FKSA1's hard-switching-optimized TRENCHSTOP 5 H5 cell design, which minimizes turn-off losses during the resonant-commutation cycles. The 650 V VCE rating fits 400 V rectified-mains designs, and 50 A continuous current supports heating coils in the 5-10 kW range. The TO-247 package's low thermal resistance theta_JC enables compact heatsink integration, while the gate-charge characteristic allows straightforward zero-voltage-switching (ZVS) implementation with appropriately tuned resonant tanks.
Được đề xuất
Welding Converter Power Stage
Welding power sources require rugged switches that handle high peak currents and short-circuit conditions, where the IKW50N65H5FKSA1's 650 V VCE and 50 A continuous rating fit primary-secondary full-bridge and half-bridge topologies. The IGBT's short-circuit withstand time (typically 5-10 us for H5 family) supports the arc-strike and arc-stability transients characteristic of MMA/TIG welding. Its low VCE(sat) of 1.65 V reduces conduction losses during the high-current welding arc, improving efficiency and reducing heatsink requirements in portable inverter welders up to 200 A output.
Được đề xuất
EV Onboard Charger PFC Stage (Industrial/Stationary)
Although not AEC-Q100 qualified, the IKW50N65H5FKSA1's 650 V VCE and 50 A continuous current suit stationary EV charging station AC-DC PFC boost stages at 11-22 kW. The H5 family delivers the hard-switching performance required for totem-pole or bridgeless PFC topologies operating at 50-100 kHz, with the co-packaged diode providing bidirectional current paths in bridgeless designs. Industrial charging cabinets benefit from the TO-247's screw-mount heatsink compatibility and the Infineon H5 family reputation for reliability in continuous-duty power-conversion service.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IKW50N65H5FKSA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IKQ50N65EH5 | IKW50N65ES5XKSA1 | STGW60H65DFB | IXYH40N65C3H1 | IRGP6650DPBF |
|---|---|---|---|---|---|---|
| Package | TO-247-3 (PG-TO247-3) | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | IXYS | Infineon Technologies |
| VCE Breakdown (V) | 650 | 650 | 650 | 650 | 650 | 600 |
| Continuous IC at TC=100C (A) | 50 | 50 | 50 | 60 | 40 | 50 |
| Switching Optimization | Hard-switching (H5) | Soft-switching (EH5) | Easy family (resonant) | Hard-switching | Hard-switching | Hard-switching (Gen7 Co-Pack) |
| Built-in Diode | Yes (co-packaged) | Yes (co-packaged) | Yes (co-packaged) | Yes (co-packaged) | Yes (co-packaged) | Yes (co-packaged) |
Bảo phân biệt quan trọng
- TRENCHSTOP 5 H5 family - hard-switching optimized (vsIKW50N65ES5XKSA1)
- 50A continuous current at TC=100C - high headroom (vsIXYH40N65C3H1)
- Lower VCE(sat) vs comparable 650V TO-247 IGBTs (vsIRGP6650DPBF)
Ghi chú thiết kế
Estimated: at IC = 50 A, VCE(sat) = 1.65 V, and DC conduction (worst case), the IKW50N65H5FKSA1 dissipates roughly 82.5 W; at 30 A continuous conduction the dissipation is closer to 49.5 W. With theta_JC around 0.49 C/W for TO-247, the junction-to-case temperature rise is approximately 82.5 W x 0.49 C/W = 40 C above case. Always size the heatsink to keep Tj below 150 C derated (175 C absolute max) under worst-case ambient and switching-loss conditions.
The TO-247 metal tab is internally connected to the collector, so the heatsink is at collector potential unless an insulated thermal interface pad (sil-pad or Bergquist) is used. For half-bridge and full-bridge layouts, route the emitter-sense connection back to pin 3 rather than the tab to avoid including tab resistance in the gate-drive return path; this prevents high di/dt induced VGE spikes from causing shoot-through or gate-oxide stress.
Keep the gate-drive loop area as small as possible: place the gate resistor (10-47 ohm) and gate-drive supply decoupling capacitor within 1-2 cm of the gate and emitter pins. The high di/dt during turn-on (typically 1000-3000 A/us for H5 family) creates significant L x di/dt voltage transients; minimize parasitic loop inductance in the power-commutation loop (collector-emitter) with wide short PCB traces or bus bars to limit VCE overshoot below the 650 V rating.
Do not exceed VGE = +/-20 V on the gate - apply -5 to -15 V negative gate bias during off-state to prevent parasitic turn-on from Miller current in bridge configurations. Ensure the co-packaged diode's reverse-recovery current rating is not exceeded; verify IGBT turn-on di/dt is limited by gate resistance to stay within the diode's safe operating area (SOA). Last, confirm DC-link voltage stays below 80% of 650 V (520 V) under worst-case transient conditions for reliable long-term operation.
Thông tin tuân thủ
RoHS compliant per Infineon product page; not AEC-Q100 qualified - this part is intended for industrial-grade use. Conflict-minerals statement available from Infineon. Halogen-free status not explicitly stated in available data.
