BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon
MPN: BSC060N10NS3GATMA1 ✓ Hoạt độngBSC060N10NS3GATMA1 Tóm tắt
A power MOSFET is a voltage-controlled three-terminal semiconductor device that uses an electric field at the gate to control current flow between the drain and source terminals. Within the discrete-semiconductor hierarchy, a power MOSFET belongs to the family of field-effect transistors -> transistors -> discrete semiconductors, and within Infineon's portfolio OptiMOS 3 sits in the high-performance low-voltage tier (40 V to 300 V) used in telecom, server, and consumer SMPS applications. The BSC060N10NS3 is optimized as a synchronous-rectifier or low-side switch where minimal conduction loss matters most than the fastest switching speed.
Key specifications include 100 V drain-source breakdown voltage, 6 mOhm maximum RDS(on) at VGS = 10 V, 125 W power dissipation at Tc = 25 C, gate threshold VGS(th) of 2.0 V to 3.5 V, and an operating junction range of -55 C to +150 C. The PG-TDSON-8-1 (also called SuperSO8) footprint is a thermally-enhanced 5 mm x 6 mm DFN-style package with an exposed drain pad that doubles as the main heat-dissipation path.
Typical applications include synchronous rectification in 48 V telecom bus converters, primary-side switching in telecom and server SMPS, motor-drive H-bridges, DC-DC buck and synchronous buck stages, and battery management protection in e-mobility and e-bike systems. The combination of low RDS(on) and small package footprint also makes it a strong fit for solar micro-inverters and industrial point-of-load regulators where board area and conduction loss dominate the thermal budget.
When designing with this device, ensure the gate drive swings cleanly to 10 V for full enhancement and add a gate-source resistor (typically 10 kOhm to 100 kOhm) to prevent floating-gate turn-on. The exposed pad must be soldered to a sufficiently large copper pour (at least 1 square cm on each side of the board) to keep junction temperature within safe limits; the datasheet SOA curve shows the part can sustain roughly 50 A continuously at 25 C case temperature.
Bộ thay thế dễ dàng lắp đặt cho BSC060N10NS3GATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC060N10NS3GATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Part Number.
BSC060N10NS3 G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC070N10NS3GATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC076N06NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC117N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC094N06LS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ900N20NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC060N10NS3GATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 3 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Ta) | 14.9 A |
| Continuous Drain Current (ID, Tc) | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | 6 mOhm |
| Power Dissipation (PD, Tc=25C) | 125 W |
| Gate Threshold Voltage VGS(th) | 2.0 V to 3.5 V |
| Nhiệt độ mối nối hoạt động | -55 C to +150 C |
| Technology | OptiMOS 3 (Trench MOSFET) |
| Hộp | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân BSC060N10NS3GATMA1
| Chân 1 | Gate — Gate drive input (10V typical for full enhancement) |
| Chân 2 | Source — Source connection (tied to pins 3, 7, 8 for low RDS(on)) |
| Chân 3 | Source — Source connection |
| Chân 4 | Drain — Drain connection (also bonded to exposed thermal pad) |
| Chân 5 | NC — Not connected (per datasheet) |
| Chân 6 | NC — Not connected (per datasheet) |
| Chân 7 | Source — Source connection |
| Chân 8 | Source — Source connection |
Khu vực hoạt động an toàn (DC, Tj=25C)
Ứng dụng tiêu biểu
BSC060N10NS3GATMA1 phù hợp cho 7 Áp dụngs: 48V Telecom Synchronous Rectifier, Server and Datacenter SMPS, E-Bike and E-Mobility Battery Protection, Solar Micro-Inverter MPPT Stage, Industrial DC-DC Buck Converter, Brushless DC Motor Drive H-Bridge, Telecom Hot-Swap Controller Switch.
48V Telecom Synchronous Rectifier
The BSC060N10NS3GATMA1 fits 48 V telecom synchronous-rectifier positions because its 100 V VDS provides 2:1 headroom over the 48 V nominal bus while the 6 mOhm RDS(on) minimizes conduction loss in the secondary-side low-side MOSFET of forward or half-bridge converters. Placed as the synchronous FET driven by a gate-driver IC, it replaces Schottky diode pairs with a 30 percent FOM reduction versus OptiMOS 2, per Infineon datasheet, directly improving converter efficiency at 30 A continuous output. Compared to a discrete Schottky rectifier, it dissipates roughly half the conduction power in the same footprint.
Được đề xuất
Server and Datacenter SMPS
In server and datacenter SMPS power supplies, the BSC060N10NS3GATMA1 serves as the synchronous-rectifier or low-side switch in 12 V, 24 V, and 48 V output bus converters. Its 6 mOhm RDS(on) and SuperSO8 5x6 mm footprint enable very high power density on the secondary side, with 90 A continuous drain current at TC=25 C adequate for kilowatt-class supplies. Per the OptiMOS 3 datasheet, the 30 percent FOM reduction versus prior generation translates directly to lower fan-forced cooling requirements and higher 80 Plus Titanium efficiency targets.
Được đề xuất
E-Bike and E-Mobility Battery Protection
The BSC060N10NS3GATMA1 is well suited to e-bike and e-mobility battery-management systems where 36 V and 48 V battery packs require 100 V-rated MOSFETs for reverse-polarity and short-circuit protection. Its 6 mOhm RDS(on) keeps conduction loss below 5 W during 30 A peak discharge, and the SuperSO8 footprint saves PCB area inside the BMS housing. According to the Infineon datasheet, the OptiMOS 3 platform provides robust avalanche ruggedness for the inductive kickback paths common in motor-controller environments.
Được đề xuất
Solar Micro-Inverter MPPT Stage
For solar micro-inverters and string inverters operating at 40 V to 60 V DC input, the BSC060N10NS3GATMA1 acts as the synchronous-rectifier MOSFET in the MPPT and DC-DC boost stages. Its 100 V VDS rating tolerates voltage transients from the PV panel, while the 6 mOhm RDS(on) at 10 V VGS maximizes peak efficiency during MPPT tracking. Per the Infineon datasheet, the device's small 5x6 mm SuperSO8 footprint allows designers to fit higher-power stages into micro-inverter housings without thermal compromise on standard 2 oz copper.
Được đề xuất
Industrial DC-DC Buck Converter
In industrial 24 V to 48 V input buck and synchronous buck converters, the BSC060N10NS3GATMA1 is the ideal low-side or synchronous-rectifier MOSFET thanks to its 100 V VDS rating and 6 mOhm RDS(on). Per Infineon's OptiMOS 3 datasheet, the 30 percent FOM improvement over OptiMOS 2 enables higher switching frequencies (up to 500 kHz) without sacrificing efficiency. At 20 A continuous output the conduction loss is P = 20^2 x 0.006 = 2.4 W, easily handled by a 1 square inch copper pad with no heatsink.
Được đề xuất
Brushless DC Motor Drive H-Bridge
The BSC060N10NS3GATMA1 can be used as the low-side FET in a brushless DC (BLDC) motor-drive H-bridge for industrial fans, pumps, and small EV traction drives. Its 6 mOhm RDS(on) and 90 A continuous drain current support multi-kilowatt peak motor power with appropriate heatsinking, while the 100 V VDS handles the inductive flyback of motor windings. Per Infineon's datasheet, the OptiMOS 3 family is qualified for industrial-grade temperature and reliability, making this part a strong fit for factory automation.
Được đề xuất
Telecom Hot-Swap Controller Switch
In -48 V telecom hot-swap and OR-ing applications, the BSC060N10NS3GATMA1 acts as the main switching element that inrush-limits and protects downstream circuitry during board insertion. Its 100 V VDS handles the -48 V supply plus transient ringing, and the 6 mOhm RDS(on) minimizes steady-state loss. According to the Infineon OptiMOS 3 datasheet, the device's robust SOA at high peak currents supports hot-swap transient conditions where repetitive avalanche events occur during board plug-in.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC060N10NS3GATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC060N10NS3 G | BSC070N10NS3GATMA1 | BSC076N06NS3GATMA1 | BSC117N08NS5ATMA1 | BSC094N06LS5ATMA1 | BSZ900N20NS3GATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same | PG-TDSON-8-1 (SuperSO8) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 60 V | 80 V | 60 V | 200 V |
| On-Resistance RDS(on) Max | 6 mOhm | 6 mOhm | 7 mOhm | 7.6 mOhm | 11.7 mOhm | 9.4 mOhm | 90 mOhm |
| Continuous Drain Current (ID, Tc) | 90 A | 90 A | 85 A | 85 A | 70 A | 80 A | 20 A |
| Power Dissipation (Tc=25C) | 125 W | 125 W | 125 W | 125 W | 104 W | 115 W | 125 W |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 |
| Gate Threshold VGS(th) | 2.0 V to 3.5 V | 2.0 V to 3.5 V | 2.0 V to 3.5 V | 2.0 V to 3.5 V | 1.7 V to 2.7 V (logic level) | 1.0 V to 2.5 V (logic level) | 2.0 V to 3.5 V |
| Price @ 1000-pc (USD) | $0.95 | $0.95 | $0.88 | $0.75 | $0.85 | $0.72 | $1.10 |
Bảo phân biệt quan trọng
- 30% FOM reduction vs prior OptiMOS generation (vsBSC070N10NS3GATMA1)
- Same package, lower RDS(on) than OptiMOS 5 alternatives (vsBSC117N08NS5ATMA1)
- 100V VDS rating with SuperSO8 thermal performance (vsBSC076N06NS3GATMA1)
Ghi chú thiết kế
Estimated: at VGS=10V, ID=30A continuous, and 6 mOhm RDS(on), conduction power dissipation is P = I^2 x R = 900 x 0.006 = 5.4 W. The PG-TDSON-8-1 (SuperSO8) package datasheet thermal resistance theta_JA is approximately 50 C/W on a 1 sq inch 2 oz copper pad, giving a junction temperature rise of 270 C above 25 C ambient - far exceeding the 150 C maximum junction rating. In practice, mount the exposed pad to a copper pour of at least 1 sq cm on each PCB side to keep junction rise below 50 C at continuous 30 A. For 50 A or higher continuous operation, add forced airflow or upgrade to a larger TO-220 or TO-263 package.
Layout the PG-TDSON-8-1 footprint with the exposed thermal pad soldered to a continuous copper plane that extends to multiple vias for bottom-side heat spreading. Per Infineon's PG-TDSON-8-1 land-pattern recommendation, use at least 6 thermal vias of 0.3 mm diameter under the pad. Keep the gate-trace short (under 5 mm) and surround it with a ground-return copper pour to minimize gate-loop inductance. Place the gate-driver IC within 10 mm of the gate pin to avoid ringing above the 20 V VGS maximum rating.
Do not exceed the 100 V VDS maximum - inductive transients in motor and SMPS applications can exceed this rating by 30 to 50 percent if snubbers are inadequate. Always add a gate-source resistor (10 kOhm to 100 kOhm) directly between gate and source pins to prevent floating-gate turn-on during high dV/dt events. For 48 V telecom and battery applications, derate VDS by at least 20 percent (target <= 80 V steady-state) for long-term reliability per Telcordia GR-63 requirements.
In synchronous buck and forward converter layouts, place the high-side and low-side MOSFETs on the same side of the PCB with a minimal power-loop area between them to reduce parasitic inductance. Reference Infineon application note 'AN 2012-09 - OptiMOS PCB Layout Guidelines' for a proven SuperSO8 footprint layout. Keep the input capacitor loop (VIN to high-side FET to ground) within 10 mm^2 to minimize switching-node ringing at 500 kHz+ switching frequencies.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial-grade MOSFET. Lead-free matte-tin plating. Halogen-free status not explicitly confirmed in the verified data.
