IPN70R2K0P7SATMA1 - 700V CoolMOS P7 MOSFET, 3A | Infineon
MPN: IPN70R2K0P7SATMA1 ✓ Hoạt độngIPN70R2K0P7SATMA1 Tóm tắt
A superjunction MOSFET is a high-voltage power transistor that uses alternating P/N epitaxial layers to achieve a much lower on-resistance per unit area than conventional planar MOSFETs at the same breakdown voltage. In the power-converter hierarchy, this MOSFET sits inside the primary-side switch position of AC-DC flyback, buck, or quasi-resonant converters, ultimately enabling the SMPS -> AC-DC/DC-DC converter -> power management IC taxonomy that defines offline power design. The CoolMOS P7 family specifically targets the 600-700 V class where efficiency, thermal behavior, and EMI must be balanced for cost-sensitive platforms.
Key specifications include 700 V drain-source breakdown voltage (VDS), 3 A continuous drain current at case temperature (TC = 25 °C), a typical R_DS(on) of approximately 2.0 Ω at VGS = 10 V, and an integrated ESD protection diode. The PG-SOT223 package provides a drain tab that can be soldered onto a DPAK-compatible footprint, enabling a cost-effective drop-in replacement for DPAK with comparable thermal performance and a smaller PCB area. The device also features a fast body diode suitable for hard-switching and quasi-resonant topologies.
The CoolMOS P7 superjunction technology uses a charge-balance structure to reduce conduction and switching losses simultaneously. Compared to previous-generation CoolMOS CE and CPA families, the P7 series improves switching loss, gate charge (Qg), and EMI behavior, while simplifying gate-drive design with tightly controlled threshold voltage. This makes the IPN70R2K0P7S suitable for high-frequency operation above 100 kHz in compact adapters.
Typical applications include low-power AC-DC flyback converters (such as smartphone chargers, tablet adapters, and set-top box power supplies), LED lighting drivers, standby and auxiliary power supplies in white goods and industrial controls, and low-power SMPS modules where the 700 V rating provides ample margin across universal-mains input (85-265 VAC). The combination of low Qg, low Eoss, and a robust integrated body diode also supports quasi-resonant and valley-switching topologies.
When designing with this device, ensure that VGS is driven to 10 V for full R_DS(on) performance; using 12 V is acceptable but must remain within the VGS(max) limit. Heatsinking of the PG-SOT223 tab is critical at higher continuous currents - the thermal pad must be soldered to a sufficiently large copper pour to keep junction temperature below 150 °C.
Bộ thay thế dễ dàng lắp đặt cho IPN70R2K0P7SATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPN70R2K0P7SATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, RoHS Status, Continuous Drain Current (ID) at TC.
IPN70R2K0P7S
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPN70R1K4P7SATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IPN70R900P7SATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IPN70R3K3P7SATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
NDF06N60ZG
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPN70R2K0P7SATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Family | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 700 V |
| Continuous Drain Current (ID, Tc=25°C) | 3 A |
| Power Dissipation (PD, Tc=25°C) | 6 W |
| On-Resistance (RDS(on)) | 2.0 Ω (max, VGS=10 V) |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) |
| Gate-Source Voltage (VGS max) | ±20 V |
| Khoảng nhiệt độ hoạt động | -55 °C to +150 °C |
| Hộp | PG-SOT223 (3 leads + tab) |
| Kiểu lắp đặt | Surface Mount |
| Integrated ESD Diode | Yes |
| Trạng thái RoHS | Compliant (ROHS3) |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
Cấu hình chân IPN70R2K0P7SATMA1
| Chân 1 | Gate — Gate drive input; connect to PWM controller output via gate resistor |
| Chân 2 | Drain — Drain terminal; internally connected to the metal tab |
| Chân 3 | Source — Source terminal; connect to ground/return path |
| Chân 4 | Drain (Tab) — Metal tab on package; drain connection for thermal dissipation to PCB copper |
Khu vực hoạt động an toàn (PG-SOT223)
Ứng dụng tiêu biểu
IPN70R2K0P7SATMA1 phù hợp cho 6 Áp dụngs: Low-Power AC-DC Flyback Converter (5-15 W), LED Lighting Driver, Standby and Auxiliary Power Supply, Quasi-Resonant (QR) Flyback Converter, Industrial Auxiliary Power Module, Smart Home Hub / IoT Gateway Power.
Low-Power AC-DC Flyback Converter (5-15 W)
The IPN70R2K0P7SATMA1 fits primary-side flyback switch position in 5-15 W AC-DC adapters such as smartphone chargers and set-top box supplies. Its 700 V VDS rating covers the reflected output plus leakage spike at 265 VAC high-line with comfortable design margin. The CoolMOS P7's low gate charge reduces drive loss, while the 2.0 Ω RDS(on) keeps conduction loss manageable at 12 V/1 A outputs; the PG-SOT223 tab solders to a DPAK-compatible land pattern, so engineers can reuse existing thermal layouts.
Được đề xuất
LED Lighting Driver
The IPN70R2K0P7SATMA1 suits isolated LED drivers from 5 W to 25 W, including E27/E14 bulbs and downlight modules. The 700 V breakdown provides ample margin for 36 V LED strings at high-line mains, and the integrated ESD diode simplifies factory handling. CoolMOS P7's fast body diode enables QR/valley-switching topologies that achieve >88% efficiency and meet EU 2019/2020 standby requirements under 75 mW; the PG-SOT223 package enables the compact form factors expected in retrofit lamp designs.
Được đề xuất
Standby and Auxiliary Power Supply
The IPN70R2K0P7SATMA1 is well-suited to 3-10 W standby auxiliary supplies in white goods, industrial PLCs, and smart-home hubs where the main converter handles high power. Its 700 V rating handles universal mains input with comfortable headroom, while the 3 A continuous current supports the full auxiliary load. The CoolMOS P7's low Qg reduces startup losses during burst-mode operation, helping designs meet ENERGY STAR and EU CoC standby targets; the small PG-SOT223 footprint frees board space for the primary converter.
Được đề xuất
Quasi-Resonant (QR) Flyback Converter
The IPN70R2K0P7SATMA1 operates efficiently in QR flyback topologies for 10-20 W adapters and chargers where valley switching is required for EMI compliance. Its low Eoss and fast body diode enable precise valley detection at 65-130 kHz switching frequencies. The CoolMOS P7 family specifically tunes output capacitance and gate charge for QR operation, achieving 3-5% higher efficiency than hard-switched flyback; the PG-SOT223 tab is the drain connection, so PCB layout must keep the drain loop small to control switching loss.
Được đề xuất
Industrial Auxiliary Power Module
The IPN70R2K0P7SATMA1 supports 5-15 W auxiliary SMPS modules in industrial control cabinets, sensors, and 24 V bus-powered equipment where universal-mains input is required. Its 700 V rating provides the surge margin needed to pass IEC 61000-4-5 lightning surge testing on the AC line. The CoolMOS P7's robust SOA enables reliable operation across industrial temperature ranges from -40 °C to +85 °C ambient; the PG-SOT223 footprint is the same as DPAK, so engineers can swap between SOT-223 and DPAK packages without PCB rework.
Được đề xuất
Smart Home Hub / IoT Gateway Power
The IPN70R2K0P7SATMA1 fits low-power mains-fed converters for smart-home hubs, Wi-Fi gateways, and IoT bridges typically rated 5-10 W. Its 700 V VDS handles universal-mains with margin, and the CoolMOS P7's low switching loss keeps adapter efficiency above 85% at low-line input, important for ENERGY STAR compliance. The PG-SOT223's small footprint suits the compact enclosures used in wall-wart and USB charger-style form factors; the integrated ESD diode improves field reliability in consumer handling environments.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPN70R2K0P7SATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPN70R2K0P7S | IPN70R1K4P7SATMA1 | IPN70R900P7SATMA1 | IPN70R3K3P7SATMA1 | NDF06N60ZG |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-SOT223 | PG-SOT223 - same | PG-SOT223 - same | PG-SOT223 - same | PG-SOT223 - same | PG-SOT223 - same |
| Drain-Source Voltage (VDS) | 700 V | 700 V | 700 V | 700 V | 700 V | 600 V |
| Continuous Drain Current (ID @ Tc=25°C) | 3 A | 3 A | 4 A | 5 A | 2.5 A | 5 A |
| On-Resistance (RDS(on), max) | 2.0 Ω | 2.0 Ω | 1.4 Ω | 0.9 Ω | 3.3 Ω | ~0.9 Ω |
| Power Dissipation (PD @ Tc=25°C) | 6 W | 6 W | 8 W | 10 W | 5 W | 8 W |
| Technology | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | Standard MOSFET |
| Integrated ESD Diode | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Higher voltage class than competing standard MOSFETs at the same package size (vsNDF06N60ZG (onsemi))
- Lower switching loss versus standard 700 V MOSFETs (vsIPN70R2K0P7S)
- Better RDS(on) for the same voltage class than older CoolMOS generations (vsIPN70R3K3P7SATMA1 (older 3.3 Ω variant))
- DPAK-footprint compatible with comparable thermal performance (vsSTD3NK60ZT4 (DPAK alternative))
Ghi chú thiết kế
Estimated: at ID=1.5 A continuous and RDS(on)=2.0 Ω, conduction loss is approximately 4.5 W. The PG-SOT223 package has theta_JA around 80 °C/W on a JEDEC EIA/JESD51 1-square-inch 2-oz copper pad; at 4.5 W loss this gives 360 °C junction rise, which is well above the 150 °C limit. Designers MUST increase copper area to at least 3-4 cm² or attach a small heatsink tab. For 5 W or higher continuous dissipation, migrate to DPAK (IPD70R2K0P7) which has theta_JA of 62 °C/W in the same land pattern footprint.
Keep the drain-source loop (D-tab to source pin) area as small as possible to minimize switching loss and EMI. Place the gate drive resistor (typically 10-47 Ω) within 5 mm of the gate pin to suppress parasitic ringing. The drain tab is the thermal pad - use a thermal via array (≥9 vias of 0.3 mm diameter) to inner-layer copper heat-spreading planes. According to Infineon's PG-SOT223 application note, this layout technique matches DPAK thermal performance without PCB rework.
Do not exceed VGS = ±20 V even though the part is rated to handle it; typical gate drive is 10-12 V from the controller. Avoid operating below VGS(th) = 3.5 V typical (minimum 2.5 V at 25 °C) to prevent linear-region operation. The PG-SOT223 drain tab must be soldered - a dry-soldered tab is the #1 field failure root cause for this package, leading to thermal runaway. Use SAC305 lead-free solder and a reflow profile compliant with JEDEC J-STD-020 MSL-1.
Use a snubber (RC or RCD) across the primary winding of flyback transformers to limit drain voltage spike below the 700 V rating. According to the Infineon CoolMOS P7 datasheet, the P7 family has tight VDS(max) tolerance and no avalanche rating for repetitive operation - relying on avalanche breakdown for transient clamping is not recommended. A properly designed RCD clamp or Zener clamp protects the device against mains surge transients (IEC 61000-4-5).
Thông tin tuân thủ
ROHS3 compliant per Infineon product page and icboms.com listing. Halogen-free per Infineon environmental compliance documentation. Not AEC-Q100 qualified - this is a consumer-grade part; for automotive applications, consider the equivalent IPAK/IPD-packaged automotive-grade parts from Infineon's CoolMOS family.
