IPN70R2K0P7SATMA1 - 700V CoolMOS P7 MOSFET, 3A | Infineon
MPN: IPN70R2K0P7SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.79 | $7.90 |
| 100 | $0.64 | $64.00 |
| 500 | $0.52 | $260.00 |
| 1,000 | $0.45 | $450.00 |
| 3,000 | $0.38 | $1,140.00 |
IPN70R2K0P7SATMA1 Overview
A superjunction MOSFET is a high-voltage power transistor that uses alternating P/N epitaxial layers to achieve a much lower on-resistance per unit area than conventional planar MOSFETs at the same breakdown voltage. In the power-converter hierarchy, this MOSFET sits inside the primary-side switch position of AC-DC flyback, buck, or quasi-resonant converters, ultimately enabling the SMPS -> AC-DC/DC-DC converter -> power management IC taxonomy that defines offline power design. The CoolMOS P7 family specifically targets the 600-700 V class where efficiency, thermal behavior, and EMI must be balanced for cost-sensitive platforms.
Key specifications include 700 V drain-source breakdown voltage (VDS), 3 A continuous drain current at case temperature (TC = 25 °C), a typical R_DS(on) of approximately 2.0 Ω at VGS = 10 V, and an integrated ESD protection diode. The PG-SOT223 package provides a drain tab that can be soldered onto a DPAK-compatible footprint, enabling a cost-effective drop-in replacement for DPAK with comparable thermal performance and a smaller PCB area. The device also features a fast body diode suitable for hard-switching and quasi-resonant topologies.
The CoolMOS P7 superjunction technology uses a charge-balance structure to reduce conduction and switching losses simultaneously. Compared to previous-generation CoolMOS CE and CPA families, the P7 series improves switching loss, gate charge (Qg), and EMI behavior, while simplifying gate-drive design with tightly controlled threshold voltage. This makes the IPN70R2K0P7S suitable for high-frequency operation above 100 kHz in compact adapters.
Typical applications include low-power AC-DC flyback converters (such as smartphone chargers, tablet adapters, and set-top box power supplies), LED lighting drivers, standby and auxiliary power supplies in white goods and industrial controls, and low-power SMPS modules where the 700 V rating provides ample margin across universal-mains input (85-265 VAC). The combination of low Qg, low Eoss, and a robust integrated body diode also supports quasi-resonant and valley-switching topologies.
When designing with this device, ensure that VGS is driven to 10 V for full R_DS(on) performance; using 12 V is acceptable but must remain within the VGS(max) limit. Heatsinking of the PG-SOT223 tab is critical at higher continuous currents - the thermal pad must be soldered to a sufficiently large copper pour to keep junction temperature below 150 °C.
Drop-in alternatives for IPN70R2K0P7SATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPN70R2K0P7SATMA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, RoHS Status, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPN70R2K0P7S
✅ Drop-In📋 Reference alternative (not in catalog)
IPN70R1K4P7SATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.48 / Unit
View Datasheet →IPN70R900P7SATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPN70R3K3P7SATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
NDF06N60ZG
✅ Drop-In📋 Reference alternative (not in catalog)
IPN70R2K0P7SATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 700 V |
| Continuous Drain Current (ID, Tc=25°C) | 3 A |
| Power Dissipation (PD, Tc=25°C) | 6 W |
| On-Resistance (RDS(on)) | 2.0 Ω (max, VGS=10 V) |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) |
| Gate-Source Voltage (VGS max) | ±20 V |
| Operating Temperature Range | -55 °C to +150 °C |
| Package | PG-SOT223 (3 leads + tab) |
| Mounting Type | Surface Mount |
| Integrated ESD Diode | Yes |
| RoHS Status | Compliant (ROHS3) |
| MSL Level | 1 (per JEDEC J-STD-020) |
IPN70R2K0P7SATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; connect to PWM controller output via gate resistor |
| Pin 2 | Drain — Drain terminal; internally connected to the metal tab |
| Pin 3 | Source — Source terminal; connect to ground/return path |
| Pin 4 | Drain (Tab) — Metal tab on package; drain connection for thermal dissipation to PCB copper |
Safe Operating Area (PG-SOT223)
Typical Applications
IPN70R2K0P7SATMA1 is suitable for 6 applications: Low-Power AC-DC Flyback Converter (5-15 W), LED Lighting Driver, Standby and Auxiliary Power Supply, Quasi-Resonant (QR) Flyback Converter, Industrial Auxiliary Power Module, Smart Home Hub / IoT Gateway Power.
Low-Power AC-DC Flyback Converter (5-15 W)
The IPN70R2K0P7SATMA1 fits primary-side flyback switch position in 5-15 W AC-DC adapters such as smartphone chargers and set-top box supplies. Its 700 V VDS rating covers the reflected output plus leakage spike at 265 VAC high-line with comfortable design margin. The CoolMOS P7's low gate charge reduces drive loss, while the 2.0 Ω RDS(on) keeps conduction loss manageable at 12 V/1 A outputs; the PG-SOT223 tab solders to a DPAK-compatible land pattern, so engineers can reuse existing thermal layouts.
Recommended
LED Lighting Driver
The IPN70R2K0P7SATMA1 suits isolated LED drivers from 5 W to 25 W, including E27/E14 bulbs and downlight modules. The 700 V breakdown provides ample margin for 36 V LED strings at high-line mains, and the integrated ESD diode simplifies factory handling. CoolMOS P7's fast body diode enables QR/valley-switching topologies that achieve >88% efficiency and meet EU 2019/2020 standby requirements under 75 mW; the PG-SOT223 package enables the compact form factors expected in retrofit lamp designs.
Recommended
Standby and Auxiliary Power Supply
The IPN70R2K0P7SATMA1 is well-suited to 3-10 W standby auxiliary supplies in white goods, industrial PLCs, and smart-home hubs where the main converter handles high power. Its 700 V rating handles universal mains input with comfortable headroom, while the 3 A continuous current supports the full auxiliary load. The CoolMOS P7's low Qg reduces startup losses during burst-mode operation, helping designs meet ENERGY STAR and EU CoC standby targets; the small PG-SOT223 footprint frees board space for the primary converter.
Recommended
Quasi-Resonant (QR) Flyback Converter
The IPN70R2K0P7SATMA1 operates efficiently in QR flyback topologies for 10-20 W adapters and chargers where valley switching is required for EMI compliance. Its low Eoss and fast body diode enable precise valley detection at 65-130 kHz switching frequencies. The CoolMOS P7 family specifically tunes output capacitance and gate charge for QR operation, achieving 3-5% higher efficiency than hard-switched flyback; the PG-SOT223 tab is the drain connection, so PCB layout must keep the drain loop small to control switching loss.
Recommended
Industrial Auxiliary Power Module
The IPN70R2K0P7SATMA1 supports 5-15 W auxiliary SMPS modules in industrial control cabinets, sensors, and 24 V bus-powered equipment where universal-mains input is required. Its 700 V rating provides the surge margin needed to pass IEC 61000-4-5 lightning surge testing on the AC line. The CoolMOS P7's robust SOA enables reliable operation across industrial temperature ranges from -40 °C to +85 °C ambient; the PG-SOT223 footprint is the same as DPAK, so engineers can swap between SOT-223 and DPAK packages without PCB rework.
Recommended
Smart Home Hub / IoT Gateway Power
The IPN70R2K0P7SATMA1 fits low-power mains-fed converters for smart-home hubs, Wi-Fi gateways, and IoT bridges typically rated 5-10 W. Its 700 V VDS handles universal-mains with margin, and the CoolMOS P7's low switching loss keeps adapter efficiency above 85% at low-line input, important for ENERGY STAR compliance. The PG-SOT223's small footprint suits the compact enclosures used in wall-wart and USB charger-style form factors; the integrated ESD diode improves field reliability in consumer handling environments.
Recommended
Recommended Products Summary
Engineering reference data for IPN70R2K0P7SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPN70R2K0P7S | IPN70R1K4P7SATMA1 | IPN70R900P7SATMA1 | IPN70R3K3P7SATMA1 | NDF06N60ZG |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-SOT223 | PG-SOT223 - same | PG-SOT223 - same | PG-SOT223 - same | PG-SOT223 - same | PG-SOT223 - same |
| Drain-Source Voltage (VDS) | 700 V | 700 V | 700 V | 700 V | 700 V | 600 V |
| Continuous Drain Current (ID @ Tc=25°C) | 3 A | 3 A | 4 A | 5 A | 2.5 A | 5 A |
| On-Resistance (RDS(on), max) | 2.0 Ω | 2.0 Ω | 1.4 Ω | 0.9 Ω | 3.3 Ω | ~0.9 Ω |
| Power Dissipation (PD @ Tc=25°C) | 6 W | 6 W | 8 W | 10 W | 5 W | 8 W |
| Technology | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | Standard MOSFET |
| Integrated ESD Diode | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Higher voltage class than competing standard MOSFETs at the same package size (vs NDF06N60ZG (onsemi))
- Lower switching loss versus standard 700 V MOSFETs (vs IPN70R2K0P7S)
- Better RDS(on) for the same voltage class than older CoolMOS generations (vs IPN70R3K3P7SATMA1 (older 3.3 Ω variant))
- DPAK-footprint compatible with comparable thermal performance (vs STD3NK60ZT4 (DPAK alternative))
Design Notes
Estimated: at ID=1.5 A continuous and RDS(on)=2.0 Ω, conduction loss is approximately 4.5 W. The PG-SOT223 package has theta_JA around 80 °C/W on a JEDEC EIA/JESD51 1-square-inch 2-oz copper pad; at 4.5 W loss this gives 360 °C junction rise, which is well above the 150 °C limit. Designers MUST increase copper area to at least 3-4 cm² or attach a small heatsink tab. For 5 W or higher continuous dissipation, migrate to DPAK (IPD70R2K0P7) which has theta_JA of 62 °C/W in the same land pattern footprint.
Keep the drain-source loop (D-tab to source pin) area as small as possible to minimize switching loss and EMI. Place the gate drive resistor (typically 10-47 Ω) within 5 mm of the gate pin to suppress parasitic ringing. The drain tab is the thermal pad - use a thermal via array (≥9 vias of 0.3 mm diameter) to inner-layer copper heat-spreading planes. According to Infineon's PG-SOT223 application note, this layout technique matches DPAK thermal performance without PCB rework.
Do not exceed VGS = ±20 V even though the part is rated to handle it; typical gate drive is 10-12 V from the controller. Avoid operating below VGS(th) = 3.5 V typical (minimum 2.5 V at 25 °C) to prevent linear-region operation. The PG-SOT223 drain tab must be soldered - a dry-soldered tab is the #1 field failure root cause for this package, leading to thermal runaway. Use SAC305 lead-free solder and a reflow profile compliant with JEDEC J-STD-020 MSL-1.
Use a snubber (RC or RCD) across the primary winding of flyback transformers to limit drain voltage spike below the 700 V rating. According to the Infineon CoolMOS P7 datasheet, the P7 family has tight VDS(max) tolerance and no avalanche rating for repetitive operation - relying on avalanche breakdown for transient clamping is not recommended. A properly designed RCD clamp or Zener clamp protects the device against mains surge transients (IEC 61000-4-5).
Compliance Information
ROHS3 compliant per Infineon product page and icboms.com listing. Halogen-free per Infineon environmental compliance documentation. Not AEC-Q100 qualified - this is a consumer-grade part; for automotive applications, consider the equivalent IPAK/IPD-packaged automotive-grade parts from Infineon's CoolMOS family.
