IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon
MPN: IPN95R1K2P7ATMA1 ✓ Hoạt độngIPN95R1K2P7ATMA1 Tóm tắt
A super-junction MOSFET is a high-voltage power-FET architecture that uses alternating P/N epitaxial columns to deplete the drift region, dramatically reducing on-resistance per unit area compared with conventional planar MOSFETs. CoolMOS P7 is the seventh generation of Infineon's super-junction platform, designed for best-in-class efficiency in consumer and industrial high-voltage converters, while the 950 V rating provides extra margin against lightning-induced surges, inductive ringing, and unstable rectified mains.
Key features include 950 V drain-to-source breakdown (V_DSS), 1.2 Ohm max R_DS(on) at V_GS = 10 V, 6 A continuous drain current at case temperature, 7 W power dissipation at T_C, and an integrated body diode suitable for quasi-resonant and flyback topologies. The SOT-223-3 footprint gives engineers a through-hole-style thermal pad in a surface-mount form factor, easing PCB layout versus DPAK alternatives.
Architecturally, the device combines a high-cell-density super-junction drift region with a low-loss gate structure. The result is one of the lowest figure-of-merit (R_DS(on) x Q_G) values in the 950 V class, which translates directly into lower conduction and switching losses. The optimized body-diode reverse recovery makes the part tolerant of hard-switching and quasi-resonant topologies.
Typical applications include auxiliary power supplies for white goods and home appliances, industrial SMPS, LED lighting drivers, e-bike and e-scooter chargers, and 400 V to 800 V battery management contactor drive. Designers benefit from a 950 V breakdown voltage that absorbs the inductive kickback of poorly clamped flyback transformers.
When designing with this part, place the source tab on a copper pad of at least 50 mm^2 to keep the junction temperature within the safe operating area at full load, and use a 10 V gate drive for the lowest R_DS(on). Gate-source resistance of 10-100 kOhm prevents floating-gate turn-on during start-up.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet, including a same-package comparison and SOA interpretation for SOT-223 thermal budgeting.
Bộ thay thế dễ dàng lắp đặt cho IPN95R1K2P7ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPN95R1K2P7ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Mounting Type, Drain-Source Voltage (VDS), Operating Temperature Range.
IPA95R1K2P7
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IPN70R1K0P7S
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IPN95R2K0P7
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
TK4A95DA
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FCPF950N95Z
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STF13N95K3
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPN95R1K2P7ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | CoolMOS P7 (Super Junction) |
| Drain-to-Source Voltage (V_DSS) | 950 V |
| Continuous Drain Current (I_D) at T_C | 6 A |
| Maximum On-Resistance R_DS(on) at V_GS=10V | 1200 mOhm (1.2 Ohm) |
| Gate Drive Voltage (max R_DS(on)) | 10 V |
| Power Dissipation (T_C) | 7 W |
| Hộp | SOT-223-3 (PG-SOT223) |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 3 (2 + Tab) |
| Series | CoolMOS P7 |
| Khoảng nhiệt độ hoạt động | -55C to +150C |
| Packaging | Tape & Reel |
| Trạng thái RoHS | Compliant |
| Part Status | Active |
Cấu hình chân IPN95R1K2P7ATMA1
| Chân 1 | Gate — Gate drive input; drive to 10 V for full enhancement |
| Chân 2 | Drain (Tab) — Drain connection; electrically tied to the metal tab for thermal dissipation |
| Chân 3 | Source — Source connection; return path for gate drive and load |
Khu vực hoạt động an toàn (T_C = 25C, DC)
Ứng dụng tiêu biểu
IPN95R1K2P7ATMA1 phù hợp cho 6 Áp dụngs: Auxiliary SMPS for White Goods, LED Lighting Drivers, Industrial SMPS Modules, E-Bike and E-Scooter Chargers, Smart Meter and IoT Gateways, Standby Power for Home Appliances.
Auxiliary SMPS for White Goods
The IPN95R1K2P7ATMA1 is ideal for 5 W to 30 W auxiliary supplies in white goods such as washing machines, refrigerators, and dishwashers. Its 950 V breakdown handles the rectified 230 V AC mains plus inductive ringing from the main motor drives, while the 1.2 Ohm R_DS(on) at V_GS = 10 V keeps conduction losses low in discontinuous-mode flyback. The SOT-223-3 footprint is hand-solderable, simplifying field repair.
Được đề xuất
LED Lighting Drivers
The IPN95R1K2P7ATMA1 fits mains-isolated LED driver topologies from 3 W to 25 W output, including isolated buck-boost and flyback designs. Its 950 V V_DSS absorbs the leakage spike from compact transformers used in low-cost LED bulbs, eliminating the need for RCD snubbers in many designs. The 6 A continuous drain rating supports start-up inrush for large capacitive loads.
Được đề xuất
Industrial SMPS Modules
The IPN95R1K2P7ATMA1 suits industrial DIN-rail SMPS modules in the 10 W to 30 W range that must operate from three-phase rectified 400 V AC. With 950 V breakdown it tolerates 480 V AC nominal inputs plus transient overvoltages up to 550 V DC. The SOT-223-3 footprint provides a large source tab for thermal dissipation, helping maintain junction temperature within safe limits at full load.
Được đề xuất
E-Bike and E-Scooter Chargers
The IPN95R1K2P7ATMA1 is well matched to 36 V to 48 V battery chargers in the 30 W to 65 W range used for e-bikes and e-scooters. Its 950 V breakdown tolerates the high leakage inductance spike of universal-input flyback transformers, while its low figure-of-merit (R_DS(on) x Q_G) keeps full-load efficiency above 88 percent. The compact SOT-223-3 package minimizes charger PCB footprint.
Được đề xuất
Smart Meter and IoT Gateways
The IPN95R1K2P7ATMA1 fits the auxiliary supply of smart electricity meters and IoT gateways, where a small SMPS derives 5 V or 12 V from the 230 V AC line. Its 950 V V_DSS provides safety margin in compliance with IEC 61010 overvoltage categories, while the 7 W power dissipation rating supports continuous operation at elevated ambient temperature inside a sealed enclosure.
Được đề xuất
Standby Power for Home Appliances
The IPN95R1K2P7ATMA1 is well suited for standby supplies that keep microcontroller-based appliances alive when the main load is off. A small 1 W to 3 W flyback converter using this part can maintain <50 mW no-load consumption, satisfying the EU eco-design directive for standby power. The 950 V rating provides robustness against line-side transients without external MOV protection.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPN95R1K2P7ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPA95R1K2P7 | IPN70R1K0P7S | IPN95R2K0P7 | TK4A95DA | FCPF950N95Z | STF13N95K3 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Toshiba | onsemi | STMicroelectronics |
| Package | SOT-223-3 (PG-SOT223) | SOT-223-3 (PG-SOT223) - same | SOT-223-3 (PG-SOT223) - same | SOT-223-3 (PG-SOT223) - same | SOT-223-3 - same | SOT-223-3 - same | SOT-223-3 - same |
| V_DSS (Drain-to-Source Voltage) | 950 V | 950 V | 700 V | 950 V | 950 V | 950 V | 950 V |
| Gate Drive Voltage (max R_DS(on)) | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V |
| Technology Family | CoolMOS P7 (Super Junction) | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | DTMOS IV | SuperFET III | MDmesh K3 |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Higher breakdown voltage than 700 V alternatives (vsIPN70R1K0P7S)
- Lower R_DS(on) than the 950 V SOT-223 alternative in the same family (vsIPN95R2K0P7)
- Cross-brand 950 V SOT-223 pin compatibility (vsTK4A95DA)
Ghi chú thiết kế
Estimated: at full 6 A drain current and 1.2 Ohm R_DS(on), conduction loss is approximately 43 W (P = I^2 x R = 36 x 1.2). Since the package is rated for only 7 W at T_C = 25C, the IPN95R1K2P7ATMA1 cannot be operated at 6 A continuous unless the case is held below 25C. In practice the part is used at 0.5-1.5 A continuous in flyback converters, keeping conduction losses in the 0.3-2.7 W range. The SOT-223-3 source tab must be soldered to at least 50 mm^2 of 2 oz copper on a 1.6 mm FR-4 PCB to keep junction temperature below 150C in a 70C ambient.
Route the gate drive trace away from the drain node to minimize parasitic feedback through C_gd. Keep the gate-source loop area below 25 mm^2 by placing the gate pull-down resistor (10-100 kOhm) directly between gate and source pins, adjacent to the IC. For the SOT-223-3 footprint, the drain tab also serves as the thermal pad - use multiple thermal vias (8-12 vias of 0.3 mm diameter) to a bottom-side copper pour for best heat extraction.
Do not exceed V_DSS = 950 V even in transient spikes - in flyback topologies the leakage inductance spike can easily exceed the steady-state DC link. Either use an RCD snubber or select a transformer with tight coupling. Also note that the IPN95R1K2P7ATMA1 is specified for 10 V gate drive to achieve the datasheet R_DS(on); driving it with a 5 V logic-level signal will significantly increase conduction losses.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part targets consumer/industrial SMPS, not automotive. Halogen-free per Infineon product family datasheet.
