IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon
Teilenummer: IPN95R1K2P7ATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.92 | $0,92 |
| 10 | $0.78 | $7,80 |
| 100 | $0.62 | $62,00 |
| 500 | $0.51 | $255,00 |
| 1.000 | $0.43 | $430,00 |
| 3.000 | $0.36 | $1.080,00 |
IPN95R1K2P7ATMA1 Übersicht
A super-junction MOSFET is a high-voltage power-FET architecture that uses alternating P/N epitaxial columns to deplete the drift region, dramatically reducing on-resistance per unit area compared with conventional planar MOSFETs. CoolMOS P7 is the seventh generation of Infineon's super-junction platform, designed for best-in-class efficiency in consumer and industrial high-voltage converters, while the 950 V rating provides extra margin against lightning-induced surges, inductive ringing, and unstable rectified mains.
Key features include 950 V drain-to-source breakdown (V_DSS), 1.2 Ohm max R_DS(on) at V_GS = 10 V, 6 A continuous drain current at case temperature, 7 W power dissipation at T_C, and an integrated body diode suitable for quasi-resonant and flyback topologies. The SOT-223-3 footprint gives engineers a through-hole-style thermal pad in a surface-mount form factor, easing PCB layout versus DPAK alternatives.
Architecturally, the device combines a high-cell-density super-junction drift region with a low-loss gate structure. The result is one of the lowest figure-of-merit (R_DS(on) x Q_G) values in the 950 V class, which translates directly into lower conduction and switching losses. The optimized body-diode reverse recovery makes the part tolerant of hard-switching and quasi-resonant topologies.
Typical applications include auxiliary power supplies for white goods and home appliances, industrial SMPS, LED lighting drivers, e-bike and e-scooter chargers, and 400 V to 800 V battery management contactor drive. Designers benefit from a 950 V breakdown voltage that absorbs the inductive kickback of poorly clamped flyback transformers.
When designing with this part, place the source tab on a copper pad of at least 50 mm^2 to keep the junction temperature within the safe operating area at full load, and use a 10 V gate drive for the lowest R_DS(on). Gate-source resistance of 10-100 kOhm prevents floating-gate turn-on during start-up.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet, including a same-package comparison and SOA interpretation for SOT-223 thermal budgeting.
Drop-in-Alternativen für IPN95R1K2P7ATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IPN95R1K2P7ATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, Mounting Type, Drain-Source Voltage (VDS), Operating Temperature Range.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IPA95R1K2P7
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IPN70R1K0P7S
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IPN95R2K0P7
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
TK4A95DA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
FCPF950N95Z
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STF13N95K3
✅ Drop-In✓ Auf Lager
$1.85 / Stück
Datenblatt ansehen →IPN95R1K2P7ATMA1 Grenzwerte & elektrische Eigenschaften
| FET Type | N-Channel |
| Technology | CoolMOS P7 (Super Junction) |
| Drain-to-Source Voltage (V_DSS) | 950 V |
| Continuous Drain Current (I_D) at T_C | 6 A |
| Maximum On-Resistance R_DS(on) at V_GS=10V | 1200 mOhm (1.2 Ohm) |
| Gate Drive Voltage (max R_DS(on)) | 10 V |
| Power Dissipation (T_C) | 7 W |
| Gehäuse | SOT-223-3 (PG-SOT223) |
| Montageart | Surface Mount |
| Pin-Anzahl | 3 (2 + Tab) |
| Series | CoolMOS P7 |
| Betriebstemperaturbereich | -55C to +150C |
| Packaging | Tape & Reel |
| RoHS-Status | Compliant |
| Part Status | Active |
IPN95R1K2P7ATMA1 Pin-Konfiguration
| Pin 1 | Gate — Gate drive input; drive to 10 V for full enhancement |
| Pin 2 | Drain (Tab) — Drain connection; electrically tied to the metal tab for thermal dissipation |
| Pin 3 | Source — Source connection; return path for gate drive and load |
Sicherer Arbeitsbereich (T_C = 25C, DC)
Typische Anwendungen
IPN95R1K2P7ATMA1 ist geeignet für 6 Anwendungs: Auxiliary SMPS for White Goods, LED Lighting Drivers, Industrial SMPS Modules, E-Bike and E-Scooter Chargers, Smart Meter and IoT Gateways, Standby Power for Home Appliances.
Auxiliary SMPS for White Goods
The IPN95R1K2P7ATMA1 is ideal for 5 W to 30 W auxiliary supplies in white goods such as washing machines, refrigerators, and dishwashers. Its 950 V breakdown handles the rectified 230 V AC mains plus inductive ringing from the main motor drives, while the 1.2 Ohm R_DS(on) at V_GS = 10 V keeps conduction losses low in discontinuous-mode flyback. The SOT-223-3 footprint is hand-solderable, simplifying field repair.
Empfohlen
LED Lighting Drivers
The IPN95R1K2P7ATMA1 fits mains-isolated LED driver topologies from 3 W to 25 W output, including isolated buck-boost and flyback designs. Its 950 V V_DSS absorbs the leakage spike from compact transformers used in low-cost LED bulbs, eliminating the need for RCD snubbers in many designs. The 6 A continuous drain rating supports start-up inrush for large capacitive loads.
Empfohlen
Industrial SMPS Modules
The IPN95R1K2P7ATMA1 suits industrial DIN-rail SMPS modules in the 10 W to 30 W range that must operate from three-phase rectified 400 V AC. With 950 V breakdown it tolerates 480 V AC nominal inputs plus transient overvoltages up to 550 V DC. The SOT-223-3 footprint provides a large source tab for thermal dissipation, helping maintain junction temperature within safe limits at full load.
Empfohlen
E-Bike and E-Scooter Chargers
The IPN95R1K2P7ATMA1 is well matched to 36 V to 48 V battery chargers in the 30 W to 65 W range used for e-bikes and e-scooters. Its 950 V breakdown tolerates the high leakage inductance spike of universal-input flyback transformers, while its low figure-of-merit (R_DS(on) x Q_G) keeps full-load efficiency above 88 percent. The compact SOT-223-3 package minimizes charger PCB footprint.
Empfohlen
Smart Meter and IoT Gateways
The IPN95R1K2P7ATMA1 fits the auxiliary supply of smart electricity meters and IoT gateways, where a small SMPS derives 5 V or 12 V from the 230 V AC line. Its 950 V V_DSS provides safety margin in compliance with IEC 61010 overvoltage categories, while the 7 W power dissipation rating supports continuous operation at elevated ambient temperature inside a sealed enclosure.
Empfohlen
Standby Power for Home Appliances
The IPN95R1K2P7ATMA1 is well suited for standby supplies that keep microcontroller-based appliances alive when the main load is off. A small 1 W to 3 W flyback converter using this part can maintain <50 mW no-load consumption, satisfying the EU eco-design directive for standby power. The 950 V rating provides robustness against line-side transients without external MOV protection.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IPN95R1K2P7ATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IPA95R1K2P7 | IPN70R1K0P7S | IPN95R2K0P7 | TK4A95DA | FCPF950N95Z | STF13N95K3 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Toshiba | onsemi | STMicroelectronics |
| Package | SOT-223-3 (PG-SOT223) | SOT-223-3 (PG-SOT223) - same | SOT-223-3 (PG-SOT223) - same | SOT-223-3 (PG-SOT223) - same | SOT-223-3 - same | SOT-223-3 - same | SOT-223-3 - same |
| V_DSS (Drain-to-Source Voltage) | 950 V | 950 V | 700 V | 950 V | 950 V | 950 V | 950 V |
| Gate Drive Voltage (max R_DS(on)) | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V |
| Technology Family | CoolMOS P7 (Super Junction) | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | DTMOS IV | SuperFET III | MDmesh K3 |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Higher breakdown voltage than 700 V alternatives (vs. IPN70R1K0P7S)
- Lower R_DS(on) than the 950 V SOT-223 alternative in the same family (vs. IPN95R2K0P7)
- Cross-brand 950 V SOT-223 pin compatibility (vs. TK4A95DA)
Designhinweise
Estimated: at full 6 A drain current and 1.2 Ohm R_DS(on), conduction loss is approximately 43 W (P = I^2 x R = 36 x 1.2). Since the package is rated for only 7 W at T_C = 25C, the IPN95R1K2P7ATMA1 cannot be operated at 6 A continuous unless the case is held below 25C. In practice the part is used at 0.5-1.5 A continuous in flyback converters, keeping conduction losses in the 0.3-2.7 W range. The SOT-223-3 source tab must be soldered to at least 50 mm^2 of 2 oz copper on a 1.6 mm FR-4 PCB to keep junction temperature below 150C in a 70C ambient.
Route the gate drive trace away from the drain node to minimize parasitic feedback through C_gd. Keep the gate-source loop area below 25 mm^2 by placing the gate pull-down resistor (10-100 kOhm) directly between gate and source pins, adjacent to the IC. For the SOT-223-3 footprint, the drain tab also serves as the thermal pad - use multiple thermal vias (8-12 vias of 0.3 mm diameter) to a bottom-side copper pour for best heat extraction.
Do not exceed V_DSS = 950 V even in transient spikes - in flyback topologies the leakage inductance spike can easily exceed the steady-state DC link. Either use an RCD snubber or select a transformer with tight coupling. Also note that the IPN95R1K2P7ATMA1 is specified for 10 V gate drive to achieve the datasheet R_DS(on); driving it with a 5 V logic-level signal will significantly increase conduction losses.
Compliance-Informationen
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part targets consumer/industrial SMPS, not automotive. Halogen-free per Infineon product family datasheet.
