IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPP320N20N3GXKSA1 ✓ Hoạt độngIPP320N20N3GXKSA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate power in switching converters, motor drives, and synchronous rectification stages. The 200 V OptiMOS 3 family belongs to the broader discrete-semiconductor hierarchy (MOSFET -> power MOSFET -> discrete semiconductor), and is engineered specifically to minimize conduction and switching losses in 48 V telecom, solar, and industrial power-conversion topologies.
Key features of the IPP320N20N3GXKSA1 include a logic-level compatible 4 V minimum gate threshold, very low on-state resistance (32 mΩ max at 10 V VGS), low gate charge, and excellent body-diode ruggedness for hard-switching applications. The part is offered in the industry-standard TO-220-3 footprint, simplifying mechanical mounting and thermal attachment to a chassis or heatsink. Its 136 W power dissipation rating at TC = 25 °C gives substantial thermal headroom for high-current designs when paired with a proper heatsink.
From a system-design perspective, the OptiMOS 3 platform combines a trench-gate cell structure with an optimized epitaxial profile to achieve low specific on-resistance (RDS(on) × area) and fast switching transitions. The device is well-suited to continuous-conduction-mode (CCM) and zero-voltage-switching (ZVS) topologies, where both low gate charge (Qg) and low output capacitance (Coss) directly reduce switching loss. Compared with older planar MOSFETs in the same voltage class, the OptiMOS 3 generation typically delivers 30–50 % lower conduction loss, enabling higher efficiency or smaller magnetics at the same power level.
Typical applications include synchronous rectification in 48 V DC-DC converters, uninterruptible power supplies (UPS), solar micro-inverters, DC motor drives, and telecom brick converters. Designers also use this part in battery-management systems and eMobility auxiliary converters that benefit from a 200 V breakdown margin. According to the Infineon datasheet, the device is qualified for industrial-grade operating conditions.
When designing with the IPP320N20N3GXKSA1, ensure the gate-drive voltage swings high enough (10 V recommended) to fully enhance the channel and realize the datasheet RDS(on). Use a low-impedance Kelvin gate connection if available, place the gate resistor close to the gate pin, and provide a heatsink sized for the application's worst-case continuous dissipation.
This page synthesizes distributor pricing, drop-in alternatives, application notes, and PCB design guidance not found in any single Infineon document, so engineers can quickly evaluate the part against cross-brand equivalents for their power-stage design.
Bộ thay thế dễ dàng lắp đặt cho IPP320N20N3GXKSA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPP320N20N3GXKSA1 (cùng hình factor và footprint) — khác nhau ở Package, Product Family, Drain-Source Voltage (VDS), Technology, Mounting Type.
IPP147N12N3GXKSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPP320N20N3-G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRF540NPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STP30NF20
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FQP50N20L
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPP320N20N3GXKSA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TC=25°C | 34 A |
| On-State Resistance RDS(on) max at VGS=10V | 32 mΩ |
| Gate Threshold Voltage VGS(th) typ | 4 V |
| Total Power Dissipation PD at TC=25°C | 136 W |
| Hộp | TO-220-3 (PG-TO220-3) through-hole |
| Kiểu lắp đặt | Through Hole |
| Số lượng chân | 3 (3 + Tab) |
| Khoảng nhiệt độ hoạt động | -55°C to +175°C |
| Channel Type | N-Channel |
| Element Configuration | Single |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
| Cấp MSL | Not applicable (through-hole) |
Cấu hình chân IPP320N20N3GXKSA1
| Chân 1 | Gate — Gate control input; drive to 10V for full enhancement |
| Chân 2 | Drain — Power drain connection; also tied to the mounting tab |
| Chân 3 | Source — Power source connection (signal ground reference) |
Khu vực hoạt động an toàn (DC, TJ=25°C)
Ứng dụng tiêu biểu
IPP320N20N3GXKSA1 phù hợp cho 6 Áp dụngs: 48V Synchronous Rectification, Uninterruptible Power Supplies (UPS), Solar Micro-Inverters, DC Motor Drives, Telecom Brick Converters, Battery Management & eMobility Auxiliary Converters.
48V Synchronous Rectification
The IPP320N20N3GXKSA1 is purpose-built for 48 V synchronous rectification in telecom DC-DC bricks and server intermediate bus converters. Its 32 mΩ RDS(on) at 10 V VGS minimizes conduction loss on the low-side switch, while the 200 V VDS breakdown provides ample margin above the 60 V worst-case bus voltage. In a typical 48 V-to-12 V buck stage, the IPP320N20N3GXKSA1 reduces rectifier loss by 30–50 % versus older planar MOSFETs, allowing higher efficiency or smaller magnetics at the same power level. The TO-220-3 package bolts to a chassis or backplane heatsink for field deployment. Compared to smaller D2PAK parts, TO-220 offers easier field replacement and lower thermal-impedance mounting when paired with thermal compound and a clip-on heatsink.
Được đề xuất
Uninterruptible Power Supplies (UPS)
In double-conversion UPS systems, the IPP320N20N3GXKSA1 functions as the inverter-stage switch on the battery-to-AC side, where it must block the rectified bus voltage and conduct full load current with minimal heating. The 200 V VDS rating comfortably covers 192 V nominal battery strings with significant transient margin, and the 34 A continuous current supports multi-kVA residential and small-commercial UPS designs. With a typical RθJC around 1 °C/W and a properly mounted heatsink, the part dissipates the inverter's switching and conduction losses without thermal shutdown. Pairing the IPP320N20N3GXKSA1 with a microcontroller-class gate driver (e.g. an IRS2003 family IC) and a small RC snubber yields clean ZVS transitions in the inverter bridge.
Được đề xuất
Solar Micro-Inverters
The IPP320N20N3GXKSA1 is well-matched to solar micro-inverter stages operating off 60-cell PV panel strings (Voc up to ~50 V), where it acts as either the high-frequency primary-side switch or the synchronous rectifier. The 200 V breakdown gives margin for voltage spikes from leaky leakage inductance and grid transients, while the low 32 mΩ RDS(on) keeps conduction loss low at the 5–10 A typical micro-inverter current. The TO-220-3 package's exposed tab is field-replaceable, a practical advantage for outdoor inverter installations. Engineers often pair it with a small ferrite-core HF transformer and a UCC28C42-class PWM controller for peak power point tracking operation across 50 kHz to 100 kHz switching frequencies.
Được đề xuất
DC Motor Drives
The IPP320N20N3GXKSA1 serves as the low-side or high-side switch in H-bridge motor drive stages rated up to 100 V DC bus and 30 A continuous motor current. The 200 V VDS gives safety margin against back-EMF spikes when the motor is suddenly decelerated, and the 34 A continuous current supports 1–2 HP industrial motor drives without paralleling devices. The trench OptiMOS 3 process yields very low body-diode reverse-recovery charge (Qrr), which is important for half-bridge dead-time management to prevent shoot-through. Designers typically place the IPP320N20N3GXKSA1 with a small RC snubber (10 Ω + 1 nF) across D-S to absorb ringing and use a 10 Ω gate resistor to control switching speed.
Được đề xuất
Telecom Brick Converters
In 48 V-input isolated DC-DC bricks for telecom and networking equipment, the IPP320N20N3GXKSA1 typically serves as the primary-side switch in a full-bridge or push-pull topology. Its 200 V breakdown easily handles the reflected output voltage of a 12 V or 5 V output brick at 4:1 or 6:1 turns ratio, while the 32 mΩ RDS(on) at 10 V VGS keeps conduction loss manageable at 50–70 % duty cycle. The TO-220-3 package through-hole design supports conventional wave-solder assembly used in telecom board manufacturing. The 136 W power dissipation rating at TC=25 °C supports 200–300 W bricks when mounted to a 10 °C/W heatsink, sufficient for most compact telecom line-card power designs.
Được đề xuất
Battery Management & eMobility Auxiliary Converters
In 48 V mild-hybrid eMobility systems and auxiliary 12 V/24 V battery converters, the IPP320N20N3GXKSA1 acts as a reverse-battery protection MOSFET or a buck-stage switch. The 200 V VDS comfortably handles 48 V bus transients and load-dump spikes, while the 34 A ID supports the auxiliary converter's full load current including inrush during cold-crank recovery. The TO-220-3 package's mechanical robustness suits under-hood automotive environments when paired with potting or conformal coating. Designers should review Infineon's automotive-grade part variants (e.g. IPB-class) if AEC-Q101 qualification is required; the IPP320N20N3GXKSA1 itself targets industrial-grade applications.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPP320N20N3GXKSA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPP147N12N3GXKSA1 | IPP320N20N3-G | IRF540NPBF | STP30NF20 | FQP50N20L |
|---|---|---|---|---|---|---|
| Package | TO-220-3 (PG-TO220-3) | TO-220-3 (PG-TO220-3) - same | TO-220-3 - same | TO-220-3 - same | TO-220-3 - same | TO-220-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| VDS (Drain-Source Voltage) | 200 V | 120 V | 200 V | 100 V | 200 V | 200 V |
| Technology | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | Planar HEXFET | STripFET | QFET planar |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
Bảo phân biệt quan trọng
- OptiMOS 3 trench technology with 32 mΩ RDS(on) at 200 V (vsIRF540NPBF)
- Higher continuous drain current (34 A) than STMicro STP30NF20 (vsSTP30NF20)
- Same-brand drop-in identical-die alternative (vsIPP320N20N3-G)
Ghi chú thiết kế
Estimated: at ID = 20 A and RDS(on) = 32 mΩ, conduction loss is approximately 12.8 W; at VIN=100 V and full-load switching at 50 kHz, switching losses add 3–5 W. The TO-220-3 package's RθJC is typically 1 °C/W and RθJA on a 1 square-inch copper area is approximately 50 °C/W. For continuous operation above 50 W total dissipation, mount the tab with thermal compound (≥0.05 mm bond-line) to a clip-on or bolt-on heatsink rated for ≤5 °C/W. Without a heatsink, derate ID aggressively above TC = 75 °C.
Keep the gate-drive loop as small as possible: place the gate resistor (typically 10 Ω) within 10 mm of the gate pin, and route the gate-source return directly back to the driver ground. Use a low-impedance Kelvin source connection if the package exposes a 4th pin (the standard TO-220-3 here does not, so use the source lead as the gate-return reference). Add a 10 Ω + 1 nF RC snubber across D-S to damp ringing caused by package inductance (~5 nH) and stray PCB loop inductance.
Do not drive the gate directly from a microcontroller 3.3 V GPIO: the OptiMOS 3 threshold is around 4 V typ and full enhancement requires 10 V. Use a dedicated gate-driver IC (TC4420, IRS2003, UCC27531, or similar) to ensure fast rise/fall times (<50 ns) and clean Miller plateau transitions. Avoid sustained operation in the linear region — accidental prolonged operation with VGS between 3 V and 8 V can cause thermal runaway. Finally, verify body-diode reverse-recovery behavior in your topology; if used as a synchronous rectifier, schedule a small dead-time (typically 100–200 ns) to prevent shoot-through.
Thông tin tuân thủ
RoHS compliant per DigiKey and LCSC distributor listings; lead-free terminal finish per Infineon part suffix '-G'. Not AEC-Q100 qualified — Infineon offers automotive-grade variants under different part numbers for automotive 12 V/48 V systems.
