IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPP320N20N3GXKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.15 | $2.15 |
| 10 | $1.94 | $19.40 |
| 100 | $1.72 | $172.00 |
| 500 | $1.53 | $765.00 |
| 1,000 | $1.36 | $1,360.00 |
Drop-in alternatives for IPP320N20N3GXKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPP147N12N3GXKSA1
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View Datasheet →IPP320N20N3-G
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IRF540NPBF
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STP30NF20
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FQP50N20L
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IPP320N20N3GXKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TC=25°C | 34 A |
| On-State Resistance RDS(on) max at VGS=10V | 32 mΩ |
| Gate Threshold Voltage VGS(th) typ | 4 V |
| Total Power Dissipation PD at TC=25°C | 136 W |
| Package | TO-220-3 (PG-TO220-3) through-hole |
| Mounting Type | Through Hole |
| Number of Pins | 3 (3 + Tab) |
| Operating Temperature Range | -55°C to +175°C |
| Channel Type | N-Channel |
| Element Configuration | Single |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | Not applicable (through-hole) |
IPP320N20N3GXKSA1 Pin Configuration
| Pin 1 | Gate — Gate control input; drive to 10V for full enhancement |
| Pin 2 | Drain — Power drain connection; also tied to the mounting tab |
| Pin 3 | Source — Power source connection (signal ground reference) |
Safe Operating Area (DC, TJ=25°C)
Typical Applications
IPP320N20N3GXKSA1 is suitable for 6 applications: 48V Synchronous Rectification, Uninterruptible Power Supplies (UPS), Solar Micro-Inverters, DC Motor Drives, Telecom Brick Converters, Battery Management & eMobility Auxiliary Converters.
48V Synchronous Rectification
The IPP320N20N3GXKSA1 is purpose-built for 48 V synchronous rectification in telecom DC-DC bricks and server intermediate bus converters. Its 32 mΩ RDS(on) at 10 V VGS minimizes conduction loss on the low-side switch, while the 200 V VDS breakdown provides ample margin above the 60 V worst-case bus voltage. In a typical 48 V-to-12 V buck stage, the IPP320N20N3GXKSA1 reduces rectifier loss by 30–50 % versus older planar MOSFETs, allowing higher efficiency or smaller magnetics at the same power level. The TO-220-3 package bolts to a chassis or backplane heatsink for field deployment. Compared to smaller D2PAK parts, TO-220 offers easier field replacement and lower thermal-impedance mounting when paired with thermal compound and a clip-on heatsink.
Recommended
Uninterruptible Power Supplies (UPS)
In double-conversion UPS systems, the IPP320N20N3GXKSA1 functions as the inverter-stage switch on the battery-to-AC side, where it must block the rectified bus voltage and conduct full load current with minimal heating. The 200 V VDS rating comfortably covers 192 V nominal battery strings with significant transient margin, and the 34 A continuous current supports multi-kVA residential and small-commercial UPS designs. With a typical RθJC around 1 °C/W and a properly mounted heatsink, the part dissipates the inverter's switching and conduction losses without thermal shutdown. Pairing the IPP320N20N3GXKSA1 with a microcontroller-class gate driver (e.g. an IRS2003 family IC) and a small RC snubber yields clean ZVS transitions in the inverter bridge.
Recommended
Solar Micro-Inverters
The IPP320N20N3GXKSA1 is well-matched to solar micro-inverter stages operating off 60-cell PV panel strings (Voc up to ~50 V), where it acts as either the high-frequency primary-side switch or the synchronous rectifier. The 200 V breakdown gives margin for voltage spikes from leaky leakage inductance and grid transients, while the low 32 mΩ RDS(on) keeps conduction loss low at the 5–10 A typical micro-inverter current. The TO-220-3 package's exposed tab is field-replaceable, a practical advantage for outdoor inverter installations. Engineers often pair it with a small ferrite-core HF transformer and a UCC28C42-class PWM controller for peak power point tracking operation across 50 kHz to 100 kHz switching frequencies.
Recommended
DC Motor Drives
The IPP320N20N3GXKSA1 serves as the low-side or high-side switch in H-bridge motor drive stages rated up to 100 V DC bus and 30 A continuous motor current. The 200 V VDS gives safety margin against back-EMF spikes when the motor is suddenly decelerated, and the 34 A continuous current supports 1–2 HP industrial motor drives without paralleling devices. The trench OptiMOS 3 process yields very low body-diode reverse-recovery charge (Qrr), which is important for half-bridge dead-time management to prevent shoot-through. Designers typically place the IPP320N20N3GXKSA1 with a small RC snubber (10 Ω + 1 nF) across D-S to absorb ringing and use a 10 Ω gate resistor to control switching speed.
Recommended
Telecom Brick Converters
In 48 V-input isolated DC-DC bricks for telecom and networking equipment, the IPP320N20N3GXKSA1 typically serves as the primary-side switch in a full-bridge or push-pull topology. Its 200 V breakdown easily handles the reflected output voltage of a 12 V or 5 V output brick at 4:1 or 6:1 turns ratio, while the 32 mΩ RDS(on) at 10 V VGS keeps conduction loss manageable at 50–70 % duty cycle. The TO-220-3 package through-hole design supports conventional wave-solder assembly used in telecom board manufacturing. The 136 W power dissipation rating at TC=25 °C supports 200–300 W bricks when mounted to a 10 °C/W heatsink, sufficient for most compact telecom line-card power designs.
Recommended
Battery Management & eMobility Auxiliary Converters
In 48 V mild-hybrid eMobility systems and auxiliary 12 V/24 V battery converters, the IPP320N20N3GXKSA1 acts as a reverse-battery protection MOSFET or a buck-stage switch. The 200 V VDS comfortably handles 48 V bus transients and load-dump spikes, while the 34 A ID supports the auxiliary converter's full load current including inrush during cold-crank recovery. The TO-220-3 package's mechanical robustness suits under-hood automotive environments when paired with potting or conformal coating. Designers should review Infineon's automotive-grade part variants (e.g. IPB-class) if AEC-Q101 qualification is required; the IPP320N20N3GXKSA1 itself targets industrial-grade applications.
Recommended
Recommended Products Summary
Engineering reference data for IPP320N20N3GXKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP147N12N3GXKSA1 | IPP320N20N3-G | IRF540NPBF | STP30NF20 | FQP50N20L |
|---|---|---|---|---|---|---|
| Package | TO-220-3 (PG-TO220-3) | TO-220-3 (PG-TO220-3) - same | TO-220-3 - same | TO-220-3 - same | TO-220-3 - same | TO-220-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| VDS (Drain-Source Voltage) | 200 V | 120 V | 200 V | 100 V | 200 V | 200 V |
| Continuous Drain Current (ID) at TC=25°C | 34 A | [DATA_NEEDED] | 34 A | 33 A | 30 A | 50 A |
| RDS(on) max at VGS=10V | 32 mΩ | [DATA_NEEDED] | 32 mΩ | 44 mΩ | [DATA_NEEDED] | 39 mΩ |
| Power Dissipation (PD) at TC=25°C | 136 W | [DATA_NEEDED] | 136 W | 130 W | 125 W | [DATA_NEEDED] |
| Technology | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | Planar HEXFET | STripFET | QFET planar |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
Key Differentiators
- OptiMOS 3 trench technology with 32 mΩ RDS(on) at 200 V (vs IRF540NPBF)
- Higher continuous drain current (34 A) than STMicro STP30NF20 (vs STP30NF20)
- Same-brand drop-in identical-die alternative (vs IPP320N20N3-G)
Design Notes
Estimated: at ID = 20 A and RDS(on) = 32 mΩ, conduction loss is approximately 12.8 W; at VIN=100 V and full-load switching at 50 kHz, switching losses add 3–5 W. The TO-220-3 package's RθJC is typically 1 °C/W and RθJA on a 1 square-inch copper area is approximately 50 °C/W. For continuous operation above 50 W total dissipation, mount the tab with thermal compound (≥0.05 mm bond-line) to a clip-on or bolt-on heatsink rated for ≤5 °C/W. Without a heatsink, derate ID aggressively above TC = 75 °C.
Keep the gate-drive loop as small as possible: place the gate resistor (typically 10 Ω) within 10 mm of the gate pin, and route the gate-source return directly back to the driver ground. Use a low-impedance Kelvin source connection if the package exposes a 4th pin (the standard TO-220-3 here does not, so use the source lead as the gate-return reference). Add a 10 Ω + 1 nF RC snubber across D-S to damp ringing caused by package inductance (~5 nH) and stray PCB loop inductance.
Do not drive the gate directly from a microcontroller 3.3 V GPIO: the OptiMOS 3 threshold is around 4 V typ and full enhancement requires 10 V. Use a dedicated gate-driver IC (TC4420, IRS2003, UCC27531, or similar) to ensure fast rise/fall times (<50 ns) and clean Miller plateau transitions. Avoid sustained operation in the linear region — accidental prolonged operation with VGS between 3 V and 8 V can cause thermal runaway. Finally, verify body-diode reverse-recovery behavior in your topology; if used as a synchronous rectifier, schedule a small dead-time (typically 100–200 ns) to prevent shoot-through.
Compliance Information
RoHS compliant per DigiKey and LCSC distributor listings; lead-free terminal finish per Infineon part suffix '-G'. Not AEC-Q100 qualified — Infineon offers automotive-grade variants under different part numbers for automotive 12 V/48 V systems.
