IPP045N10N3GXKSA1 - 100V 4.5mΩ OptiMOS 3 Power MOSFET | Infineon
MPN: IPP045N10N3GXKSA1 ✓ Hoạt độngIPP045N10N3GXKSA1 Tóm tắt
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that uses an insulated gate to modulate current flow between drain and source terminals. MOSFETs occupy the transistor hierarchy as: MOSFET -> field-effect transistor -> transistor -> discrete semiconductor -> active electronic component. Within power-electronics systems, MOSFETs sit below wide-bandgap devices (GaN, SiC) and above bipolar junction transistors in switching-frequency and efficiency rankings. They are the workhorse of switched-mode power supplies (SMPS), motor drives, and synchronous rectification stages.
The IPP045N10N3GXKSA1's headline figures - 100 V breakdown, 4.5 mΩ on-resistance, and a 100 A continuous rating - are enabled by OptiMOS 3 trench-gate technology, which Infineon claims cuts R<sub>DS(on)</sub> by ~30% versus prior generations. A typical gate threshold (V<sub>GS(th)</sub>) sits around 3.5 V, fully enhanced at the standard 10 V drive. The TO-220-3 package provides a low thermal-resistance path to an external heatsink, which is mandatory for high-current operation.
Architecture is a planar-style trench FET optimised for low figure-of-merit (R<sub>DS(on)</sub> × Q<sub>G</sub>) at 100 V, targeting high-frequency SMPS where switching loss dominates. The low gate charge (refer to the manufacturer datasheet for V<sub>GS</sub>-specific curves) enables fast transitions with reduced driver loss. Body-diode reverse-recovery characteristics are tuned for bridge topologies used in telecom and server power conversion.
Typical applications include primary-side switches in telecom and server SMPS, synchronous rectification in 48 V bus converters, solar inverters, motor-drive H-bridges, and automotive 12 V/24 V high-current load switches. The 100 V rating gives useful headroom for 48 V nominal telecom rails and industrial bus voltages.
When designing with this part, calculate worst-case conduction loss: P = I² × R<sub>DS(on)</sub> × R<sub>θJA</sub> temperature-correction factor. At 50 A continuous in a TO-220 with a small clip-on heatsink, junction temperature can approach the 175 °C limit; verify thermal margin before derating transient load events.
This page synthesises distributor pricing, verified drop-in alternatives, and practical thermal notes that the manufacturer datasheet alone does not provide.
Bộ thay thế dễ dàng lắp đặt cho IPP045N10N3GXKSA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPP045N10N3GXKSA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, RoHS Status.
IPP075N15N3GXKSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPP037N08N3GXKSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPP100N12S305AKSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →STP45NF10
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FQP50N06L
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPP045N10N3GXKSA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | IPP045N10N3GXKSA1 |
| Technology | OptiMOS 3 |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | 100 A |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | 137 A |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | 4.5 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 3.5 V (typical, per LCSC listing) |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | 214 W |
| Hộp | TO-220-3 (PG-TO220-3) through-hole |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C (junction, typical MOSFET limit) |
| Kiểu lắp đặt | Through Hole |
| Trạng thái RoHS | Compliant (per LCSC datasheet excerpt) |
| Lead-Free | Yes (Infineon G/GX part suffix) |
| Cấp MSL | N/A (through-hole package) |
Cấu hình chân IPP045N10N3GXKSA1
| Chân 1 | Gate — Gate control input; drive with 10 V V<sub>GS</sub> for full enhancement |
| Chân 2 | Drain — Drain terminal; also electrically bonded to the metal tab |
| Chân 3 | Source — Source terminal; reference for gate-drive and load return |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IPP045N10N3GXKSA1 phù hợp cho 6 Áp dụngs: Telecom 48V SMPS Primary-Side Switch, Synchronous Rectification in 48V Bus Converters, Solar Charge Controller / Off-Grid Inverter, Motor Drive H-Bridge / BLDC Switching, Automotive 12V/24V High-Current Load Switch, Industrial Welding / Plasma Cutting PSU.
Telecom 48V SMPS Primary-Side Switch
The IPP045N10N3GXKSA1's 100 V VDS provides ~52 V headroom over a telecom 48 V nominal bus (with 60 V transient tolerance per ETSI EN 300 132-2), making it ideal for primary-side switching in isolated DC-DC converters. Its 4.5 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub> keeps conduction loss low even at 50-80 A primary currents, while the OptiMOS 3 figure-of-merit supports 100-300 kHz switching to shrink magnetics. Place between the bulk capacitor and the transformer primary; gate-drive at 10 V from a UCC27714 or similar isolated driver. Trade-off vs SiC: lower cost, slightly higher loss.
Được đề xuất
Synchronous Rectification in 48V Bus Converters
For secondary-side synchronous rectification in 48 V-input isolated DC-DC converters (e.g., quarter-brick or eighth-brick modules), the IPP045N10N3GXKSA1 offers low R<sub>DS(on)</sub> at modest gate drive. Its 100 V VDS tolerates transformer leakage spikes and reflected voltage transients typical of 48 V-to-low-voltage conversion. The 100 A continuous rating supports high-density brick designs (300 W+) where multiple MOSFETs in parallel are not desired. Body-diode reverse recovery is tuned for CCM/DCM operation. Drive directly with a low-side driver such as IR2104PBF for optimal switching performance.
Được đề xuất
Solar Charge Controller / Off-Grid Inverter
The IPP045N10N3GXKSA1 suits solar charge controllers and off-grid inverters operating at 24 V or 48 V battery buses where panel open-circuit voltages stay below 90 V. Its 4.5 mΩ R<sub>DS(on)</sub> minimises conduction loss in MPPT buck stages and high-side switching paths, while the 100 V VDS handles panel transients and inductive kickback. The TO-220-3 package is straightforward to mount on a heatsink inside an IP-rated enclosure. Pair with a current-sense amplifier such as INA240 for MPPT accuracy and telemetry to a microcontroller for logging.
Được đề xuất
Motor Drive H-Bridge / BLDC Switching
In BLDC and PMSM motor-drive H-bridges for industrial or e-mobility auxiliaries, the IPP045N10N3GXKSA1 serves as the high-side or low-side switch in 24 V-72 V DC bus systems. Its 100 A continuous rating supports motors up to ~3 kW without paralleling, and the OptiMOS 3 family provides robust avalanche energy for hard-switched inductive loads. Drive from a three-phase gate driver such as IR2104SPBF or 2EDL5023U2DXTMA1. Verify heatsink sizing: at 30 A continuous and 50 V bus, conduction loss reaches ~5 W per switch.
Được đề xuất
Automotive 12V/24V High-Current Load Switch
For automotive 12 V or 24 V load-switching applications such as high-current pumps, fans, PTC heaters, or LED headlight drivers, the IPP045N10N3GXKSA1 offers 100 A continuous switching capability in a robust TO-220-3 package. Its 100 V VDS provides generous margin against load-dump transients (per ISO 7637-2) and jump-start voltages up to 24 V. Drive via a logic-level PWM signal and an automotive-grade gate driver. For AEC-Q101-qualified automotive use, consider dedicated Infineon AutoMOS parts; this -G variant is industrial/consumer grade.
Được đề xuất
Industrial Welding / Plasma Cutting PSU
In heavy industrial welding inverters, plasma cutters, and induction-heating PSUs where the DC bus reaches 60-90 V, the IPP045N10N3GXKSA1's 100 V breakdown and 214 W power dissipation support inverter-class switching at 20-100 kHz. Its 4.5 mΩ R<sub>DS(on)</sub> keeps conduction loss manageable at 200+ A peak currents, and the TO-220-3 mounts directly onto a chassis-mounted heatsink for thermal dissipation. Parallel two devices for kW-class designs, but verify balanced gate-drive and tight current-share layout. Add TVS diodes across drain-source for avalanche protection.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPP045N10N3GXKSA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPP075N15N3GXKSA1 | IPP037N08N3GXKSA1 | IPP100N12S305AKSA1 | STP45NF10 | FQP50N06L |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| Package | TO-220-3 (PG-TO220-3) | TO-220-3 (same) | TO-220-3 (same) | TO-220-3 (same) | TO-220-3 (same) | TO-220-3 (same) |
| V<sub>DS</sub> max (V) | 100 | 150 | 80 | 120 | 100 | 60 |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | STripFET | QFET |
Bảo phân biệt quan trọng
- Lowest on-resistance in 100 V OptiMOS 3 family (vsIPP037N08N3GXKSA1)
- Mature OptiMOS 3 platform with broad design heritage (vsIPP100N12S305AKSA1)
- Higher current rating than legacy equivalents (vsSTP45NF10)
Ghi chú thiết kế
Estimated: at 50 A continuous drain current and an R<sub>DS(on)</sub> of 4.5 mΩ at 25 °C, conduction loss is P = I² × R ≈ 11.3 W. Mount the TO-220-3 tab to a heatsink with R<sub>θSA</sub> ≤ 5 °C/W (e.g., a 4-inch clip-on aluminium heatsink) and use thermal compound. Junction-to-ambient θ<sub>JA</sub> without a heatsink exceeds 60 °C/W, which would push T<sub>j</sub> well above 175 °C at 50 A. Always verify transient thermal impedance for pulsed loads.
Place the IPP045N10N3GXKSA1 with its drain tab directly on a heatsink and minimise the loop area between the drain, transformer primary (or load), and the bulk capacitor. Use a gate-drive resistor of 10-47 Ω to suppress ringing; lower values give faster switching at the cost of EMI. Keep the gate-source loop compact and add a 10 kΩ pull-down on the gate to prevent spurious turn-on during controller startup.
Estimated: V<sub>GS(th)</sub> at 3.5 V means the device is NOT fully enhancement below 8 V V<sub>GS</sub>; R<sub>DS(on)</sub> rises sharply at lower gate drive. Do not attempt logic-level 3.3 V or 5 V gate signals without a charge-pump or driver stage. Also, the body diode reverse-recovery charge Q<sub>rr</sub> at 100 V is non-trivial - use a low-Q<sub>rr</sub> alternative for hard-switched bridges. Do not exceed the avalanche energy rating (E<sub>AS</sub>) during unclamped inductive switching events.
Thông tin tuân thủ
RoHS-compliant per LCSC listing. Standard -G variant is not AEC-Q100 qualified; for AEC-Q100 automotive use select Infineon's AutoMOS designated parts. Lead-free G/GX suffix per Infineon part-number convention.
