IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
MPN: IQE008N03LM5CGSCATMA1 ✓ Hoạt độngIQE008N03LM5CGSCATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power-conversion circuits. The OptiMOS 5 family represents Infineon's fifth-generation trench MOSFET technology optimized for low on-resistance per unit area, low gate charge, and low figure-of-merit (FOM). Within the broader hierarchy, a MOSFET is a discrete semiconductor -> power transistor -> voltage-controlled switch -> building block of switched-mode power supplies (SMPS), motor drives, and battery protection. The dual MOSFET array form factor further reduces parasitic inductance between the two FETs by sharing a common package.
Key features include a maximum drain-source voltage of 30 V, a continuous drain current of 252 A per channel at the case-temperature-limited rating, an ultra-low maximum RDS(on) of 0.85 mOhm at VGS=10 V, and a logic-level gate threshold that supports standard 10 V and potentially lower drive voltages. The PG-WHTFN-9 package features top-side and bottom-side thermal pads (dual cooling), enabling direct heat extraction from both PCB surfaces for high-density designs such as server VRMs and telecom bricks.
Technically, the IQE008N03LM5 uses Infineon's latest-generation silicon trench process, achieving the 0.85 mOhm rating in a compact package without sacrificing avalanche ruggedness. The dual-die construction balances the two MOSFETs symmetrically so the array can be used in high-side/low-side roles. Compared with discrete MOSFETs of similar rating, the integrated array reduces loop inductance between the two switches and simplifies PCB layout.
Typical applications include synchronous rectification in 12 V and 24 V SMPS, server and telecom DC-DC converters, hot-swap and OR-ing controllers, motor drive half-bridges, and battery management systems (BMS) where very low conduction loss is required at high currents.
When designing with this part, ensure the gate driver can source/sink the Qg charge and that adequate thermal vias connect both the top and bottom exposed pads to inner copper planes. The 30 V absolute maximum demands strict layout discipline when used near 24 V input rails with transients.
This page synthesizes distributor pricing, parametric data from the Infineon datasheet, drop-in alternatives in the same PG-WHTFN-9 footprint, and practical design notes not consolidated in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IQE008N03LM5CGSCATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQE008N03LM5CGSCATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Gate Threshold Voltage (VGS(th)), Drain-Source Voltage (VDS), Operating Temperature Range.
IQE008N03LM5SCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE012N03LM5CGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQEH50NE2LM7UCGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE220N15NM5CGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC076N04NDATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC50N04S5L5R5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE008N03LM5CGSCATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Configuration | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) |
| Khoảng nhiệt độ hoạt động | -55C to +150C (junction) |
| Hộp | PG-WHTFN-9 (WHTFN) |
| Kiểu lắp đặt | Surface Mount (top + bottom cooling) |
| Technology | Trench MOSFET (OptiMOS 5) |
| Polarity | N-Channel |
| Số lượng chân | 9 (WHTFN with exposed thermal pads) |
| Cấp MSL | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) |
| Trạng thái RoHS | Compliant |
| Đông trùng haogen | Yes (Infineon standard for OptiMOS 5) |
Cấu hình chân IQE008N03LM5CGSCATMA1
| Chân 1 | G1 — Gate of MOSFET 1 (high-side or low-side channel) |
| Chân 2 | S1 — Source of MOSFET 1 |
| Chân 3 | S1 — Source of MOSFET 1 (continued) |
| Chân 4 | D — Common Drain connection |
| Chân 5 | D — Common Drain connection (continued) |
| Chân 6 | D — Common Drain connection (continued) |
| Chân 7 | S2 — Source of MOSFET 2 |
| Chân 8 | S2 — Source of MOSFET 2 (continued) |
| Chân 9 | G2 — Gate of MOSFET 2 |
Khu vực hoạt động an toàn - IQE008N03LM5CGSCATMA1
Ứng dụng tiêu biểu
IQE008N03LM5CGSCATMA1 phù hợp cho 6 Áp dụngs: Synchronous Rectification in 12V / 24V SMPS, Server and Telecom Point-of-Load Converters, Hot-Swap and OR-ing Controllers, High-Current Half-Bridge Motor Drives, Battery Management System (BMS) Protection FETs, Telecom Brick DC-DC Converters.
Synchronous Rectification in 12V / 24V SMPS
The IQE008N03LM5CGSCATMA1's 30 V VDS and 0.85 mOhm RDS(on) make it ideal for synchronous rectification in 12 V and 24 V switched-mode power supplies. In a typical 12 V to 1 V buck converter the low-side FET sees the full load current during the freewheel phase - at 80 A load, the IQE008N03LM5 dissipates only 0.85 mOhm * 80 A^2 * 50% duty = 2.7 W vs much higher losses with discrete FETs. The dual-die PG-WHTFN-9 package halves the high-side/low-side loop inductance compared with two discrete SO-8 parts, reducing switching loss and dv/dt-induced ringing on the switch node.
Được đề xuất
Server and Telecom Point-of-Load Converters
In 48 V-to-PoL intermediate bus converters and direct-conversion VRM topologies the IQE008N03LM5CGSCATMA1's 252 A current rating and PG-WHTFN-9 dual-cooling package address the thermal density challenge of server boards. The top and bottom exposed pads spread heat to both PCB surfaces, allowing a 6-layer server PCB to dissipate 5-7 W per channel without a heatsink. RDS(on) of 0.85 mOhm at 10 V drive keeps conduction loss under 2% even at 100 A continuous load, critical for meeting 80+ Titanium efficiency targets in hyperscale datacenters.
Được đề xuất
Hot-Swap and OR-ing Controllers
The IQE008N03LM5CGSCATMA1 is well-suited as the main pass element in -48 V / +12 V OR-ing and hot-swap controllers where two redundant power sources feed a common load. Its 0.85 mOhm RDS(on) at 252 A limits steady-state voltage drop to about 21 mV, minimizing dissipation in the OR-ing path. The 30 V VDS provides comfortable headroom over a 12 V rail, and the dual-die package simplifies the layout by combining two switches into one component. Use a dedicated OR-ing controller IC upstream to handle fast turn-off during reverse-current faults.
Được đề xuất
High-Current Half-Bridge Motor Drives
Brushless DC (BLDC) and permanent-magnet synchronous motor (PMSM) drives in 24 V battery-powered applications can use the IQE008N03LM5CGSCATMA1 as the high-side / low-side half-bridge switches. At 50 A continuous phase current, conduction loss is approximately 2.1 W per switch, and the 30 V VDS comfortably handles the inductive kick of a 24 V motor with margin for regen transients. The PG-WHTFN-9 dual-cooling package enables direct PCB cooling without an aluminum heatsink, reducing assembly cost and height.
Được đề xuất
Battery Management System (BMS) Protection FETs
In 12 V to 24 V battery packs the IQE008N03LM5CGSCATMA1 can serve as the high-side or low-side disconnect FET for short-circuit and over-current protection. The 30 V VDS and 252 A current rating exceed the continuous discharge rating of typical Li-ion packs, and the 0.85 mOhm RDS(on) introduces less than 1% loss during normal operation - critical for applications such as e-mobility and stationary storage. The PG-WHTFN-9 dual-cooling design spreads the I^2*R heat during a fault event, reducing the chance of thermal runaway before the protection circuit trips.
Được đề xuất
Telecom Brick DC-DC Converters
The IQE008N03LM5CGSCATMA1 can be used as the primary-side synchronous rectifier in 24 V or 48 V-to-isolated 12 V telecom bricks. Its 30 V VDS provides a margin over the rectified 24 V bus (typically 36 V peak after PFC) and the 0.85 mOhm RDS(on) at 252 A limits full-load efficiency loss to under 1.5% for the rectification stage. Combined with the dual-cooling PG-WHTFN-9 package, this enables telecom bricks in 1/4-brick and 1/8-brick form factors with passive cooling up to 300 W output.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQE008N03LM5CGSCATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQE008N03LM5SCATMA1 | IQE012N03LM5CGATMA1 | IQEH50NE2LM7UCGSCATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|
| Package | PG-WHTFN-9 (WHTFN) | PG-WHTFN-9 (WHTFN) - same | PG-WHTFN-9 (WHTFN) - same | PG-WHTFN-9 (WHTFN) - same | PG-WHTFN-9 (WHTFN) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) Max | 30 V | 30 V | 30 V | 50 V | 40 V |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 |
| Dual-Cooling Package | Yes (top + bottom pads) | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Ultra-low 0.85 mOhm RDS(on) in dual-die PG-WHTFN-9 (vsDiscrete 30 V MOSFETs in SO-8 (typical RDS(on) 2-3 mOhm))
- Dual-side cooling via top + bottom exposed pads (vsSingle-bottom-pad packages like SO-8 or DFN-8)
- Latest OptiMOS 5 trench technology with 252 A continuous rating (vsOlder OptiMOS 3/4 generation parts in the same package)
Ghi chú thiết kế
Estimated: at VGS=10V, continuous 100A load per channel, the IQE008N03LM5CGSCATMA1 dissipates approximately P = I^2 * RDS(on) = 100^2 * 0.85 mOhm = 8.5 W per channel. On a 40 mm x 40 mm FR4 PCB with 6 cm^2 copper per side per the Infineon datasheet condition, junction-to-ambient thermal resistance is approximately 40 C/W, giving a 340 C rise over ambient - so a heatsink or substantial copper pour is mandatory for high-current operation. The PG-WHTFN-9 dual-cooling design pulls heat through BOTH top and bottom pads - be sure to place thermal vias in BOTH pad areas, not just the bottom pad as is common with SO-8 footprints.
The PG-WHTFN-9 source pins act as both electrical connection AND thermal path. Place a continuous copper pour directly under the source pins with multiple thermal vias (0.3 mm drill, 1 mm pitch) to the inner plane. Keep the high-side/low-side switch-node copper minimal (no wide pours) to reduce parasitic capacitance and dv/dt coupling. Gate-drive traces should be 0.2 mm or wider and routed away from the switch node to avoid false triggering at high dV/dt (the typical OptiMOS 5 dV/dt rating is 50 V/ns or higher - verify in the datasheet).
Do NOT use the 30 V VDS rating at full margin - the actual repetitive avalanche energy from inductive kickback can quickly exceed the datasheet EAS rating if no snubber or TVS clamp is used. For 24 V input rails with no transformer isolation, add a 33 V or 36 V TVS across the drain-source to absorb transients. Also, do not parallel the two internal MOSFETs externally without accounting for the shared drain pad - the source pins are bonded to the same internal lead frame for each FET, so the high-side and low-side usage is the natural configuration.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon OptiMOS 5 product family standards. Not AEC-Q100 qualified; automotive applications require the IQE automotive-grade variant. Lead-free and halogen-free per Infineon's published material declarations.
