IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon
MPN: IQE012N03LM5CGATMA1 ✓ Hoạt độngIQE012N03LM5CGATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that converts and regulates electrical energy by toggling between a low-resistance on state and a high-resistance off state. Within the broader taxonomy, this part is an N-channel enhancement-mode MOSFET, a sub-class of discrete power transistors, which sit under discrete semiconductors and ultimately under active components. MOSFETs are the workhorse of DC-DC conversion, motor drive and load switching across every voltage domain, with low-voltage OptiMOS 5 specifically targeting 12 V to 24 V rails in computing, telecom and automotive subsystems.
Key features of this part include 30 V VDS max, 1.20 mOhm RDS(on) (typ, VGS=10 V), 34 A continuous drain current (Ta, 25 C) and 224 A pulsed drain current (Tc, 25 C, pulse duration per datasheet), 2.5 W power dissipation (Ta) and 107 W (Tc), with VGS(th) in the 1.0 V to 2.4 V range typical of OptiMOS 5 logic-level variants. The Source-Down PQFN 3.3x3.3 package with center-gate pinout improves power density, eases PCB layout symmetry, and reduces the source inductance loop area for cleaner switching at high di/dt.
Architecture-wise the device combines a planar-style OptiMOS 5 cell array with the Source-Down flip-chip assembly, allowing the bottom thermal pad to carry source current directly to the PCB. This reduces package parasitic source inductance by approximately 50 percent compared to a drain-down part in the same footprint, lowering switching losses in hard-switched buck converters, half-bridges, and eFuse / hot-swap circuits where every milli-ohm of RDS(on) and every nanohenry of Ls translates directly into wasted energy and ringing.
Typical applications include synchronous rectification in 12 V VRM and POL buck converters for servers, AI accelerator cards and high-current GPU power stages, hot-swap and OR-ing switches on 24 V telecom boards, motor drive H-bridges for low-voltage BLDC pumps and fans, USB-PD and high-current Type-C source controls, battery protection FETs in 1-3 s packs, and high-side load switches in industrial PLCs. The 3.3x3.3 mm footprint is intentionally small to fit space-constrained modules.
When designing with the IQE012N03LM5CG, observe SOA derating carefully: continuous Ta rating of 34 A assumes a reference footprint (FR4 40x40x1.5 mm with 6 cm2 copper, per Infineon test conditions) and falls rapidly with rising ambient temperature. Use Kelvin-source pin 4 (KS) for gate drive return to avoid source-bond voltage drop modulating VGS. Match VGS drive to 10 V (logic-level compatible) for full RDS(on) achievement, and gate-drive peak current per the OptiMOS 5 typical application circuit.
This page synthesizes Infineon distributor pricing as of 2026-09-14, same-package drop-in alternatives, comparison tables against competing 30 V N-FETs, and practical design notes beyond what the manufacturer datasheet alone surfaces for new design-in.
Bộ thay thế dễ dàng lắp đặt cho IQE012N03LM5CGATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQE012N03LM5CGATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
IQE012N03LM5CGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE008N03LM5SCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE013N04LM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQEH50NE2LM7UCGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC019N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE036N08NM6CGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE012N03LM5CGATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID, Ta) | 34 A |
| Pulsed Drain Current (IDM, Tc) | 224 A |
| On-Resistance RDS(on), typ | 1.20 mOhm |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 107 W |
| Technology / Process | OptiMOS 5 trench |
| Hộp | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ hoạt động | -55 C to +150 C (TJ) |
| Gate Drive (recommended) | 10 V (logic-level compatible) |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 |
Cấu hình chân IQE012N03LM5CGATMA1
| Chân 1 | Gate — Gate drive input, VGS=10 V recommended for full RDS(on) |
| Chân 2 | Source — Source connection, internally bonded to thermal pad |
| Chân 3 | Source — Source connection, internally bonded to thermal pad |
| Chân 4 | KS (Kelvin Source) — Kelvin source return for gate drive; isolate from main source current path |
| Chân 5 | Source — Source connection (drain on opposite face in Source-Down) |
| Chân 6 | Source — Source connection |
| Chân 7 | Source — Source connection |
| Chân 8 | Source — Source connection |
| Chân 9 | Source — Source connection |
Khu vực hoạt động an toàn - IQE012N03LM5CGATMA1
Ứng dụng tiêu biểu
IQE012N03LM5CGATMA1 phù hợp cho 7 Áp dụngs: 12V POL Synchronous Rectifier, USB-PD VBUS Hot-Swap / Source Switch, 24V Telecom Hot-Swap / OR-ing, Low-Voltage BLDC Motor Drive H-Bridge, 1S-3S Battery Pack Protection FET, Industrial High-Side Load Switch, AI Accelerator Card Power Stage.
12V POL Synchronous Rectifier
The IQE012N03LM5CGATMA1's 1.20 mOhm RDS(on) at VGS=10 V and 34 A continuous drain current make it a strong synchronous-rectifier candidate for 12 V input point-of-load buck converters powering CPUs, GPUs and ASICs. At 25 A the conduction loss is approximately 0.75 W, and the Source-Down PQFN 3.3x3.3 keeps the high-side/low-side loop inductance low for clean switching transitions. Use 10 V gate drive to fully enhance the cell; pair with a gate driver such as the IR2104STRPBF or 2EDN7524GXTMA1 to avoid shoot-through.
Được đề xuất
USB-PD VBUS Hot-Swap / Source Switch
In USB-PD Type-C source paths, the IQE012N03LM5CGATMA1 acts as the VBUS load switch controlling 5 V / 9 V / 15 V / 20 V PDOs up to 5 A. The 30 V VDS rating covers the highest 20 V PDO with margin, and 1.20 mOhm RDS(on) holds conduction loss under 30 mW at 5 A. The Source-Down package enables a tight thermal pad under the source current path so the connector area can deliver full 100 W without exceeding 80 C Tj. Add TVS protection at VBUS for surge compliance.
Được đề xuất
24V Telecom Hot-Swap / OR-ing
The IQE012N03LM5CGATMA1 suits 24 V telecom board hot-swap and OR-ing diodes in -48 V ground-referenced systems when sized for the positive return path. Its 30 V VDS provides headroom for transient ringing on 24 V distribution rails, and the 224 A pulsed rating handles inrush with adequate margin. The Source-Down footprint simplifies symmetrical PCB layout when used with a paralleled second FET. Add an Infineon gate driver such as IRS2004STRPBF for controlled dV/dt turn-on.
Được đề xuất
Low-Voltage BLDC Motor Drive H-Bridge
For 12 V to 24 V BLDC pumps, fans and small industrial drives, the IQE012N03LM5CGATMA1 functions as the low-side or high-side switch in a 4-FET H-bridge. The 1.20 mOhm RDS(on) keeps per-FET conduction loss under 1 W at 25 A continuous, and the 3.3x3.3 PQFN footprint lets designers parallel two FETs per leg for higher current without expanding board area. Use a gate driver such as IRS21834STRPBF or 2ED21844S06JXUMA1 for bootstrap high-side drive at 24 V bus.
Được đề xuất
1S-3S Battery Pack Protection FET
The IQE012N03LM5CGATMA1 is well suited as the protection MOSFET for 1-series to 3-series lithium-ion battery packs in power tools, e-bikes and portable medical devices. The 30 V VDS comfortably exceeds the maximum 3s pack voltage of 12.6 V, and 1.20 mOhm RDS(on) ensures minimal voltage drop during high-current discharge (10 A gives 120 mV drop). Its 3.3x3.3 mm PQFN enables compact BMS layouts. Choose the IAUC suffix for AEC-Q101 / automotive-grade variants.
Được đề xuất
Industrial High-Side Load Switch
In industrial PLC and factory-automation loads, the IQE012N03LM5CGATMA1 implements a high-side load switch on 24 V rails with P-channel replacement performance at N-channel cost. Drive the gate with a bootstrap or charge-pump circuit (such as the BTS3118N or a discrete gate driver) to fully enhance the FET for lowest RDS(on). The 224 A pulsed rating provides ample inrush margin for capacitive and inductive loads at turn-on, and the Source-Down footprint eases heatsinking on FR4.
Được đề xuất
AI Accelerator Card Power Stage
The IQE012N03LM5CGATMA1 can be used as a synchronous rectifier in 12 V input AI-accelerator VRMs where multiple paralleled 3.3x3.3 FETs share current to reduce conduction loss. The Source-Down architecture lowers switching loop inductance, suppressing ringing and EMI on the high-di/dt gate transitions. Each device carrying 20 A to 25 A continuous, two paralleled FETs achieve the 40 A to 50 A per phase typical of GPU/CPU VRMs with adequate thermal margin.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQE012N03LM5CGATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQE012N03LM5CGSCATMA1 | IQE008N03LM5SCATMA1 | IQE013N04LM6ATMA1 | IQEH50NE2LM7UCGSCATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PQFN 3.3x3.3 (PG-TTFN-9-3, Source-Down) | PQFN 3.3x3.3 (Source-Down) | PQFN 3.3x3.3 (Source-Down) | PQFN 3.3x3.3 (Source-Down) | PQFN 3.3x3.3 (Source-Down) | PQFN 3.3x3.3 (Source-Down class) |
| VDS max | 30 V | 30 V | 30 V | 40 V | 30 V | 80 V |
| RDS(on) typ | 1.20 mOhm at VGS=10 V | 1.20 mOhm at VGS=10 V | ~0.8 mOhm class (-33%) | 1.3 mOhm class (+8%) | lower mOhm class | 1.9 mOhm class (+58%) |
| Technology | OptiMOS 5 trench | OptiMOS 5 trench | OptiMOS 5 trench | OptiMOS 6 | OptiMOS 7 | OptiMOS 5 |
Bảo phân biệt quan trọng
- Ultra-low 1.20 mOhm RDS(on) in 3.3x3.3 Source-Down PQFN (vsBSC019N08NS5ATMA1 (Infineon 80 V OptiMOS 5, 1.9 mOhm))
- Source-Down package architecture halves source inductance (vsConventional drain-down PQFN 3.3x3.3 (e.g., BSC0502NSIATMA1))
- Infineon OptiMOS 5 platform with full distributor stock (vsCross-brand 30 V PQFN 3.3x3.3 Source-Down equivalents from Vishay or Renesas)
Ghi chú thiết kế
Estimated: at 25 A continuous conduction with RDS(on)=1.20 mOhm and Tj=100 C, conduction loss is roughly P=I^2*R = 25*25*0.0018 = ~1.1 W (RDS(on) derated ~1.5x at 100 C). On the Infineon reference PCB (FR4 40x40x1.5 mm, 6 cm2 copper) this keeps Tj well below 150 C. On smaller PCBs (1 cm2 copper) the part derates to roughly half the continuous current - use the SOA chart and thermal impedance curves in the datasheet.
The Source-Down package requires the bottom thermal pad to be electrically tied to the source and to the system ground plane. Use a continuous ground copper pour under the pad, with multiple thermal vias (at least 9 x 0.3 mm) stitching the top pad to inner ground planes. Keep the high-side and low-side switching loop area as small as possible to leverage the Source-Down inductance advantage - typical layouts show a 50 percent reduction in voltage overshoot at the switch node.
Drive VGS to 10 V, not 4.5 V, to achieve full RDS(on) - OptiMOS 5 logic-level VGS(th) is 1.0-2.4 V typical, but the curve flattens only above 8 V. Also, never tie the Kelvin Source pin (pin 4) to the same PCB trace as the main source current - this defeats its purpose and reintroduces source-bond voltage drop into the gate drive loop. Do not exceed 30 V VDS transients; even brief ringing above 30 V can permanently damage the device.
Use a dedicated gate driver (such as IR2104STRPBF, 2EDN7524GXTMA1, or IRS2004STRPBF) capable of sourcing and sinking 1 A to 2 A peak current to achieve fast switching transitions. Slow gate edges convert switching loss into heat and can trigger dv/dt-induced turn-on of the complementary FET in a half-bridge. Place a 10 Ohm gate resistor in series to dampen ringing; value depends on the gate driver and PCB layout parasitics.
Thông tin tuân thủ
Commercial-grade OptiMOS 5 part. For AEC-Q101 automotive qualification choose an IAUC-suffix variant. RoHS and lead-free per Infineon product page. REACH compliance assumed per EU regulations; conflict minerals declaration per Infineon CMRT.
