IQE220N15NM5CGATMA1 - 150V 44A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: IQE220N15NM5CGATMA1 ✓ Hoạt độngIQE220N15NM5CGATMA1 Tóm tắt
An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage inverts an n-type channel and permits electron flow from drain to source. In the power-management taxonomy, this part belongs to the discrete MOSFET family, which sits under power semiconductors, used for switching and synchronous-rectification roles in SMPS, motor drives, and server/telecom power rails.
Key features include 22 mOhm maximum RDS(on), a Source-Down package topology that pulls the source potential to the top side for superior thermal dissipation and simplified PCB layout, and 100 W continuous power dissipation at the case. The TTFN-9 footprint also features a large exposed drain pad that enables direct PCB heat-sinking with minimal thermal resistance. Gate threshold is optimized for standard 10 V drive.
The device is built on Infineon's OptiMOS 5 trench process, which reduces gate charge (Qg) and output capacitance (Coss) compared with prior generations, thereby cutting switching-related losses at high frequency. The Source-Down arrangement lowers package parasitic source inductance and improves current-handling symmetry between paralleled MOSFETs, an important consideration for high-current multiphase converters.
Typical applications include primary-side switches in telecom and server SMPS, synchronous-rectification MOSFETs in 48 V DC-DC converters, half-bridge stages in industrial motor drives, and hot-swap controllers in 12 V / 24 V distributed-power architectures. The 150 V rating provides ample margin above 100 V continuous input rails, improving reliability during transient spikes.
When designing with this part, place the Source-Down source pad on the top copper layer with multiple thermal vias to inner copper planes to maximize heat extraction. Use a low-inductance gate-drive loop and a Kelvin-source connection where the package permits to prevent dynamic RDS(on) degradation. This page synthesizes distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IQE220N15NM5CGATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQE220N15NM5CGATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
IQE220N15NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE220N15NM5CGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE050N08NM5CGATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IQE036N08NM6CGATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IQE065N10NM5CGSCATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IQE220N15NM5CGATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 5 |
| Kiểu transitor | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc | 44 A |
| On-State Resistance RDS(on) max | 22 mOhm |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 100 W |
| Hộp | PG-TTFN-9-3 (Source-Down) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55C to +175C (estimated from Tj max) |
| Technology | Trench MOSFET, OptiMOS 5 |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Số chân | 9 (TTFN) |
Cấu hình chân IQE220N15NM5CGATMA1
| Chân 1 | GATE — Gate drive input (10 V drive typical) |
| Chân 2 | SENSE — Kelvin source connection for gate-drive return |
| Chân 3 | NC — Not connected (per datasheet) |
| Chân 4 | NC — Not connected (per datasheet) |
| Chân 5 | NC — Not connected (per datasheet) |
| Chân 6 | NC — Not connected (per datasheet) |
| Chân 7 | NC — Not connected (per datasheet) |
| Chân 8 | NC — Not connected (per datasheet) |
| Chân 9 | NC — Not connected (per datasheet) |
| Chân PAD | DRAIN / SOURCE (Source-Down) — Source-Down top pad - large thermal pad for heat extraction and primary current path |
Khu vực hoạt động an toàn (estimated based on datasheet ratings)
Ứng dụng tiêu biểu
IQE220N15NM5CGATMA1 phù hợp cho 6 Áp dụngs: 48 V Telecom SMPS Primary Switch, Server 54 V Synchronous Rectifier, Industrial Motor Drive Half-Bridge, Hot-Swap / eFuse for 100 V Distribution, Solar Inverter DC-DC Stage, Battery Formation & Test Equipment.
48 V Telecom SMPS Primary Switch
The IQE220N15NM5CGATMA1 is well-suited as the primary-side switch in 48 V telecom isolated DC-DC converters. Its 150 V VDS rating provides 2-3x transient headroom above the nominal 54 V telecom input rail, while 22 mOhm RDS(on) minimizes conduction loss at full load. The Source-Down PG-TTFN-9-3 package enables top-side copper cooling, which is critical in 1U/2U rectifier modules where both sides of the PCB are used for power flow. In a 500 W full-bridge topology running at 200 kHz, the OptiMOS 5 trench process lowers switching loss versus prior generations, contributing measurable efficiency gains at partial load. Pair with a UCC28951 controller for phase-shifted full-bridge control with adaptive dead-time optimization.
Được đề xuất
Server 54 V Synchronous Rectifier
In 48 V-to-12 V or 54 V-to-12 V point-of-load converters for hyperscale servers, the IQE220N15NM5CGATMA1 serves as the synchronous-rectifier MOSFET on the secondary side. The Source-Down package aligns the high-current source-return path on the top copper layer, dramatically reducing parasitic source inductance that would otherwise slow switching and cause voltage overshoot. With 44 A continuous rating and 22 mOhm RDS(on), a single device handles 1 kW secondary-side current at high efficiency. Combined with the OptiMOS 5 low-Qg characteristic, this part enables 100 kHz+ switching frequencies needed for high-power-density server VR designs. Companion gate driver: UCC24612 synchronous-rectifier controller.
Được đề xuất
Industrial Motor Drive Half-Bridge
The IQE220N15NM5CGATMA1 is ideal for the half-bridge stages of industrial 100 V-class BLDC and servo motor drives. Its 150 V VDS rating covers back-EMF transients from 96 V bus systems with margin, while the 44 A continuous rating supports drives up to approximately 5 kW without paralleling. The Source-Down TTFN package enables direct top-side copper cooling in confined motor-control enclosures where bottom-side cooling is impractical. The OptiMOS 5 trench technology reduces dead-time losses by enabling faster turn-on/turn-off, which directly improves PWM waveform fidelity and reduces torque ripple in field-oriented control (FOC) loops. Pair with IRS2104STRPBF or 2EDL8124GXUMA1 gate drivers for high-side/low-side drive.
Được đề xuất
Hot-Swap / eFuse for 100 V Distribution
In 100 V-class hot-swap and electronic-fuse circuits for industrial equipment, the IQE220N15NM5CGATMA1 serves as the main pass-MOSFET protecting downstream circuitry from inrush currents and short-circuit events. The 150 V VDS rating provides 50% headroom above continuous bus voltage, while 22 mOhm RDS(on) keeps continuous conduction loss low at full load. The Source-Down package allows the hot-swap heatsink to be mounted on the top side, simplifying thermal management in dense backplane systems. During a fault event, the part's robust avalanche rating and Source-Down low-inductance design limit voltage overshoot, improving reliability. Companion controller: LTC4283 or hot-swap manager IC for sequenced startup.
Được đề xuất
Solar Inverter DC-DC Stage
In photovoltaic string inverters operating at 100 V-150 V DC bus voltages, the IQE220N15NM5CGATMA1 functions as the primary switch in boost or interleaved DC-DC converter stages. The 150 V VDS rating handles the maximum power-point voltage of 100 V-class PV strings with transient margin, while 44 A continuous rating supports string currents up to approximately 12-15 A at full power. The Source-Down PG-TTFN-9-3 package facilitates top-side cooling via aluminum substrate or insulated metal substrate PCB commonly used in solar inverter designs. OptiMOS 5 low gate charge reduces driver losses, critical for high-frequency interleaved topologies targeting compact magnetic designs.
Được đề xuất
Battery Formation & Test Equipment
In battery formation cycling and test equipment used for lithium-ion cell manufacturing, the IQE220N15NM5CGATMA1 serves as the linear or switching pass-element controlling charge and discharge currents to individual cells. Its 150 V VDS rating allows series-stacks of multiple cells to be tested from a single switching stage, while the 44 A continuous rating supports high-current formation protocols required for capacity grading. The Source-Down package's top-side cooling is advantageous in densely packed cell-fixture assemblies where air flow is limited. The OptiMOS 5 trench technology provides precise analog-grade switching characteristics, important for the accurate current control needed during formation cycling.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQE220N15NM5CGATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQE220N15NM5ATMA1 | IQE220N15NM5CGSCATMA1 | IQE050N08NM5CGATMA1 | IQE036N08NM6CGATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-3 (Source-Down) | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN (similar Source-Down family) | PG-TTFN (similar Source-Down family) | PG-TTFN (similar Source-Down family) |
| Drain-to-Source Voltage (VDS) | 150 V | 150 V | 150 V | 80 V | 80 V | 100 V |
| Continuous Drain Current (ID) | 44 A | 44 A | 44 A | 50 A (estimated, 80 V class) | 36 A (estimated, 80 V class) | 65 A (estimated, 100 V class) |
| On-State Resistance RDS(on) | 22 mOhm | 22 mOhm | 22 mOhm | 5.0 mOhm (estimated) | 3.6 mOhm (estimated) | 6.5 mOhm (estimated) |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (trench) | OptiMOS 5 (trench) | OptiMOS 5 (trench) | OptiMOS 6 (trench, newer gen) | OptiMOS 5 (trench) |
| Source-Down Package | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Source-Down topology enables direct top-side cooling (vsConventional TOLL-packaged MOSFETs)
- OptiMOS 5 trench technology reduces switching losses (vsOlder OptiMOS 3/4 generations)
- 150 V rating provides optimal margin for 100 V continuous rails (vs200 V-rated MOSFETs)
Ghi chú thiết kế
Estimated: With a Source-Down PG-TTFN-9-3 package, top-side copper cooling is the primary thermal path. The exposed source pad should be soldered to a copper pour of at least 1 square inch (645 mm^2) on the top layer, with an array of thermal vias (typically 0.3 mm drill, 0.5 mm pitch, filled with epoxy) connecting to inner copper planes. This configuration typically achieves a junction-to-ambient thermal resistance (theta_JA) below 35 C/W, allowing the 100 W Tc rating to be utilized in most practical applications without external heatsinks.
The Source-Down topology reverses the conventional TOLL/TDSON current path: drain current exits through the PCB bottom thermal pad while source current flows on the top copper layer. This arrangement minimizes the high-current loop area, reducing parasitic inductance that would otherwise cause voltage overshoot during switching. Design the gate-drive loop to be as short as possible and use a Kelvin-source connection (Sense pin) to prevent dynamic RDS(on) degradation caused by source-inductance-induced gate-voltage droop during high di/dt transitions.
Place the gate-driver IC within 5 mm of the gate pin to minimize gate-loop inductance. Use a 10 ohm gate-drive resistor (with optional parallel Schottky diode for asymmetric turn-on/off tuning) to control switching speed and limit ringing. Keep the power-loop (drain-source) copper pour as wide as practical - at least 10 mm for 44 A continuous operation - and avoid narrow bottlenecks that saturate current density. For high-frequency (>100 kHz) designs, add a small RC snubber (typically 1-10 ohm + 1-10 nF) across the drain-source to damp ringing without significantly increasing loss.
Do not exceed the datasheet's absolute maximum VDS of 150 V; in applications with significant parasitic inductance (long PCB traces, transformer leakage), add a transient voltage suppressor (TVS) or RC snubber to clamp inductive spikes. The Source-Down package requires special PCB footprint - do not reuse a standard TOLL/TDSON land pattern; refer to the Infineon footprint recommendation in the datasheet. Also note that the Sense pin must be connected to the Source pad with a separate trace - it cannot be directly bonded to the main source pad on the PCB.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified for automotive; for automotive-grade equivalents, look for Infineon parts with -Q1 suffix or automotive-qualified Source-Down MOSFETs. Halogen-free per JEDEC JS709 standard.
