IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon
MPN: IRFH8318TRPBF ✓ Hoạt độngIRFH8318TRPBF Tóm tắt
Key features include an extremely low on-state resistance of 3.1 mΩ max, a 30 V drain-source breakdown voltage, 41 nC total gate charge optimized for high-frequency switching, and a maximum power dissipation of 3.6 W at Ta (59 W at Tc). The SuperSO8 (PQFN 5x6) package provides a low thermal resistance path and is widely accepted as the de-facto footprint for 30 V synchronous MOSFETs in point-of-load and CPU/GPU VR applications. The StrongIRFET™ silicon platform is engineered to balance low RDS(on), low Qg, and robust avalanche ruggedness.
This part is built on Infineon's advanced trench MOSFET process, delivering a low figure-of-merit (FOM = RDS(on) × Qg) that minimizes conduction and switching losses simultaneously. Its low gate charge supports multi-MHz operation in buck converters, while its low on-resistance keeps conduction losses negligible at high currents, making it ideal for high-density, high-efficiency synchronous rectification in switched-mode power supplies.
Typical applications include synchronous rectification in high-frequency buck converters for computing platforms (servers, workstations, graphics cards), DC-DC point-of-load (POL) modules, OR-ing FETs in redundant power architectures, and high-current low-voltage motor drives. The combination of 30 V rating and 120 A pulsed current capability also makes it well-suited for battery management and protection circuits in 12 V rail systems.
When designing with this device, ensure the gate driver can source/sink sufficient peak current to charge the 41 nC Qg quickly, and use Kelvin-source PCB layout where possible to keep the gate loop inductance low. The exposed pad must be soldered to a sufficiently large copper pour to achieve the rated 59 W Tc power dissipation, and an appropriate TVS or snubber may be required in avalanche-prone topologies.
This page synthesizes distributor pricing, drop-in alternatives, and practical PCB-layout notes not found in the bare manufacturer datasheet, providing engineers a single source for selection, sourcing, and design considerations.
Bộ thay thế dễ dàng lắp đặt cho IRFH8318TRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFH8318TRPBF (cùng hình factor và footprint) — khác nhau ở Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Package, Total Gate Charge (Qg).
IRFH8311TRPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFH8330TRPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR3806TRPBF
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →NTMFS4934NT1G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SiRA12DP-T1-GE3
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
PSMN3R5-30LL
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFH8318TRPBF Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | IRFH8318TRPBF |
| Technology | StrongIRFET™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta=25°C | 27 A |
| Continuous Drain Current (ID) at Tc=25°C | 120 A |
| On-Resistance RDS(on) max at VGS=10V | 3.1 mΩ |
| Total Gate Charge (Qg) | 41 nC |
| Power Dissipation (Ta) | 3.6 W |
| Power Dissipation (Tc) | 59 W |
| Hộp | PQFN 5x6 (SuperSO8, 8-PowerTDFN) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ hoạt động | -55°C to +150°C |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
| Cấp MSL | 1 |
| Description | Synchronous MOSFET for high-frequency buck converters |
Cấu hình chân IRFH8318TRPBF
| Chân 1 | Source — Source terminal (low-side return) |
| Chân 2 | Source — Source terminal (low-side return) |
| Chân 3 | Source — Source terminal (low-side return) |
| Chân 4 | Gate — Gate drive input (10V recommended for full RDS(on)) |
| Chân 5 | Drain — Drain terminal (high-voltage switching node) |
| Chân 6 | Drain — Drain terminal (high-voltage switching node) |
| Chân 7 | Drain — Drain terminal (high-voltage switching node) |
| Chân 8 | Drain — Drain terminal (high-voltage switching node) |
| Chân 9 | EP — Exposed Pad - electrically Drain; thermal pad, must be soldered to PCB copper |
Khu vực hoạt động an toàn (DC, Tj=25°C)
Ứng dụng tiêu biểu
IRFH8318TRPBF phù hợp cho 7 Áp dụngs: Synchronous Buck Converter (12V POL), Server & Datacenter VR, OR-ing FET for Redundant Power, High-Current Motor Drive (Low-Voltage), Battery Protection & Load Switch, Telecom 48V-to-POL DC-DC Stage, USB Power Delivery (PD) Fast Charger.
Synchronous Buck Converter (12V POL)
The IRFH8318TRPBF is the low-side synchronous rectifier in 12 V point-of-load buck converters feeding CPU, GPU, ASIC, and FPGA core rails. Its 3.1 mΩ max RDS(on) at VGS=10 V keeps conduction losses below 1 W even at 20 A load, while the 41 nC Qg allows switching frequencies up to 1-2 MHz without excessive gate-drive loss. Compared to a Schottky diode solution, this StrongIRFET™ part delivers 5-8% higher efficiency at full load.
Được đề xuất
Server & Datacenter VR
In server and datacenter voltage-regulator modules, the IRFH8318TRPBF is used as the synchronous FET in multi-phase VR topologies for 12 V to 0.8-3.3 V conversion. The PQFN 5x6 footprint is shared across all phases, simplifying PCB layout, and its 120 A TC rating provides ample margin for transient load spikes. The part's strong avalanche rating makes it robust against output-inductor ringing at 1 MHz switching frequencies typical in modern VR13 applications.
Được đề xuất
OR-ing FET for Redundant Power
The IRFH8318TRPBF is commonly deployed as an OR-ing FET in N+1 redundant 12 V power architectures for telecom and networking equipment. Its 3.1 mΩ RDS(on) minimizes voltage drop during normal operation, while the 30 V VDS rating comfortably exceeds 12 V nominal with full transient headroom. The exposed pad allows heat to dissipate directly into the OR-ing busbar copper pour, supporting continuous 27 A TA operation with minimal temperature rise.
Được đề xuất
High-Current Motor Drive (Low-Voltage)
In low-voltage (12-24 V) brushless DC motor drive half-bridges and H-bridges, the IRFH8318TRPBF serves as the switching element with its 120 A pulsed current capability handling motor inrush surges. The 3.1 mΩ RDS(on) reduces I²R losses during continuous PWM operation, extending battery runtime in cordless tools and e-mobility applications. The PQFN 5x6 footprint is also mechanically robust for vibration-prone environments.
Được đề xuất
Battery Protection & Load Switch
The IRFH8318TRPBF acts as a high-current load switch and reverse-battery protection FET in 12 V Li-ion battery packs and uninterruptible power supplies. Its low RDS(on) keeps voltage drop below 100 mV at 30 A discharge, preserving battery capacity and runtime. The StrongIRFET™ silicon is rated for repetitive avalanche energy, providing robust protection against load-dump transients common in automotive and industrial battery systems.
Được đề xuất
Telecom 48V-to-POL DC-DC Stage
In telecom isolated DC-DC bricks that step 48 V down to 12 V intermediate bus, the IRFH8318TRPBF is used in the secondary-side synchronous rectification stage delivering up to 30 A. The 30 V VDS rating is intentionally sized for the 12 V bus plus transient margin, allowing fast switching without avalanche stress. The 41 nC Qg supports 200-500 kHz switching typical of telecom bricks, balancing efficiency and magnetic size.
Được đề xuất
USB Power Delivery (PD) Fast Charger
In USB-PD 100W+ charger designs, the IRFH8318TRPBF is used as the synchronous rectifier on the secondary side of the resonant or flyback topology. Its 3.1 mΩ RDS(on) keeps rectifier losses below 2.5 W at 5 A output, helping meet DOE Level VI and EU CoC Tier 2 efficiency standards. The PQFN 5x6 footprint is preferred for its compactness in dense charger modules, and the low Qg enables MHz-class operation in active-clamp flyback designs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFH8318TRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFH8311TRPBF | IRFH8330TRPBF | NTMFS4934NT1G | SiRA12DP-T1-GE3 | PSMN3R5-30LL |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | Vishay | NXP |
| Package | PQFN 5x6 (SuperSO8) | PQFN 5x6 (SuperSO8) - same | PQFN 5x6 (SuperSO8) - same | PQFN 5x6 (SO-8FL) - same | PowerPAK SO-8 - same | PQFN 5x6 - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| RDS(on) max at VGS=10V | 3.1 mΩ | 4.0 mΩ (+29%) | 2.5 mΩ (-19%) | 3.0 mΩ (-3%) | 3.2 mΩ (+3%) | 3.5 mΩ (+13%) |
| Continuous Drain Current at TC=25°C | 120 A | 100 A | 140 A | 120 A | 100 A | 110 A |
| Total Gate Charge (Qg) | 41 nC | 33 nC | 55 nC | 38 nC | 48 nC | 45 nC |
| Power Dissipation at TC=25°C | 59 W | 50 W | 65 W | 60 W | 55 W | 52 W |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Bảo phân biệt quan trọng
- Lowest Qg in 30V/3mΩ class enables MHz switching (vsSiRA12DP-T1-GE3)
- Highest continuous TC current at 30V/3mΩ (vsNTMFS4934NT1G)
- StrongIRFET™ platform for avalanche ruggedness (vsIRFR3806TRPBF)
- Better price-performance ratio vs Vishay equivalent (vsSiRA12DP-T1-GE3)
Ghi chú thiết kế
The exposed pad (pin 9) of the PQFN 5x6 package MUST be soldered to a PCB copper pour of at least 1 square inch (645 mm²) to achieve the rated 59 W TC power dissipation. Without proper thermal vias (recommended: 9-12 vias at 0.3 mm drill, 1 mm pitch) under the exposed pad, the device can only dissipate ~3.6 W as listed for TA. Use 2 oz copper on outer layers or 1 oz on inner layers with multiple thermal via arrays for best thermal performance.
Use a Kelvin-source connection by routing the gate driver's return directly to the source pins (1-3) rather than sharing the high-current source path. This eliminates source-inductance-induced gate-drive ringing and prevents the well-known 'Miller turn-on' failure mode where dv/dt on the drain couples through Cgd and partially turns on the MOSFET. Keep the gate loop area below 0.5 cm² for switching edges under 10 ns.
Estimated: At 25 A continuous drain current and 3.1 mΩ RDS(on), the conduction loss is P = I² × R = 25² × 0.0031 = 1.94 W. With proper 1 sq-in copper pour the thermal resistance θJA is approximately 50°C/W, yielding a 97°C temperature rise above ambient. Above 35 A continuous on the standard footprint, a heatsink or forced-air cooling becomes necessary to keep junction below 150°C maximum rating.
Do not exceed VGS=±20 V absolute maximum; use a gate-source Zener clamp (typically 12-15 V) to protect against transients from the gate driver. Inductive switching applications must include a freewheeling path or TVS clamp to absorb avalanche energy. When paralleling multiple IRFH8318TRPBF parts, add a 10Ω gate-source resistor on each device to suppress parasitic oscillations from gate-loop inductance mismatch.
Thông tin tuân thủ
RoHS compliant and lead-free (Pb-free) per Infineon product page; 'PBF' suffix indicates lead-free finish. MSL Level 1 per JEDEC J-STD-020. Not AEC-Q100 qualified (industrial/consumer grade).
