IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
MPN: IQDH35N03LM5CGATMA1 ✓ Hoạt độngIQDH35N03LM5CGATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source terminals when a sufficient gate-to-source voltage is applied. Within the discrete semiconductor hierarchy, MOSFETs sit beneath transistors, which belong to the broader class of active discrete components. The OptiMOS 5 technology employed here represents Infineon's fifth-generation trench MOSFET platform, delivering industry-leading figure-of-merit (FOM = RDS(on) × Qg) for switching power conversion applications.
Key differentiating features include ultra-low RDS(on) of 0.35 mΩ at 10 V VGS, monolithic integrated Schottky-like body diode for reduced reverse recovery losses, and an exposed-top metal pad for top-side cooling. The PG-TTFN-9-U02 package provides a low-profile, halogen-free footprint with gull-wing leads and a wide drain tab for vertical current flow and minimal package inductance.
The device is engineered using Infineon's OptiMOS 5 30V platform, which utilizes a deep-trench cell structure combined with a thin wafer backside metallization process. This architecture reduces both conduction and switching losses, making the part highly suitable for high-frequency synchronous rectification at frequencies above 500 kHz.
Typical applications include synchronous rectification in isolated DC-DC converters, point-of-load (POL) converters for servers and telecom, hot-swap and OR-ing functions in 12 V industrial bus systems, motor drive switching stages in battery-powered robotics, and high-current USB-PD power paths. The low gate charge supports fast switching transitions for high-frequency buck and buck-boost topologies.
When designing with this MOSFET, pay close attention to PCB layout - the drain tab and source pads must be connected to wide copper pours to achieve the rated thermal performance. Use Kelvin-source connection for the gate drive to suppress source-bounce and ringing at high di/dt.
This page synthesizes distributor pricing, drop-in alternatives, application-specific design considerations, and comparison data not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IQDH35N03LM5CGATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQDH35N03LM5CGATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), Series.
IQDH35N03LM5CG
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSZ065N03LSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N03L5SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFH8318TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC066N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0902NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQDH35N03LM5CGATMA1 Tỷ lệ tối đa & tính chất điện
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta | 66 A |
| Pulsed Drain Current (IDM) at Tc | 700 A |
| Gate-to-Source Voltage (VGS) max | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | 0.35 mΩ (typical at VGS=10 V) |
| Power Dissipation (PD) at Ta | 2.5 W |
| Power Dissipation (PD) at Tc | 278 W |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C |
| Hộp | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 |
| Trạng thái RoHS | Compliant |
| Đông trùng haogen | Yes |
| Channel Type | N-Channel |
| Technology | OptiMOS 5 trench MOSFET |
Cấu hình chân IQDH35N03LM5CGATMA1
| Chân 1 | GND — Ground / thermal pad connection |
| Chân 2 | S — Source (Kelvin) |
| Chân 3 | S — Source (Kelvin) |
| Chân 4 | G — Gate |
| Chân 5 | NC — Not connected (per datasheet) |
| Chân 6 | S — Source (Kelvin) |
| Chân 7 | S — Source (Kelvin) |
| Chân 8 | D — Drain (exposed pad / top-side) |
| Chân 9 | D — Drain (exposed pad / top-side) |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IQDH35N03LM5CGATMA1 phù hợp cho 7 Áp dụngs: Synchronous Rectification in DC-DC Converters, Point-of-Load (POL) Buck Converters, Hot-Swap and OR-ing Functions, Battery-Powered Motor Drive Switching, USB Power Delivery (USB-PD) High-Current Paths, Industrial 12 V / 24 V Bus Switching, Telecom and Server Power Conversion.
Synchronous Rectification in DC-DC Converters
The IQDH35N03LM5CGATMA1 is an excellent choice for the synchronous rectifier (low-side) position in 12 V input isolated and non-isolated DC-DC converters. Its 0.35 mΩ RDS(on) at VGS=10 V minimizes conduction loss even at 60 A continuous current, while the OptiMOS 5 low Qrr body diode reduces dead-time switching losses. Placed between the 12 V bus and the transformer/inductor secondary, the device enables >97% efficiency at switching frequencies of 300-500 kHz typical of telecom and server SMPS designs. The PG-TTFN-9-U02 footprint allows direct PCB layout reuse between 30 V and 40 V platform variants.
Được đề xuất
Point-of-Load (POL) Buck Converters
For 12 V bus-to-1 V or lower POL conversion powering server CPUs, GPUs, and ASICs, the IQDH35N03LM5CGATMA1 serves as the low-side synchronous switch in multiphase buck topologies. Its 30 V rating provides ample margin for 12 V transients while the 0.35 mΩ RDS(on) keeps per-phase conduction loss under 1 W at 30 A. The PQFN 5x6 mm² footprint is the industry-standard for VRM power stages, allowing direct drop-in replacement across generations. Designers value the device's low Qgd/Qgs ratio which minimizes dead-time and body-diode conduction during load-step transients.
Được đề xuất
Hot-Swap and OR-ing Functions
The IQDH35N03LM5CGATMA1's 700 A pulsed current capability and 30 V VDS rating make it well suited for 12 V hot-swap and OR-ing applications in enterprise server and telecom power shelves. Its 0.35 mΩ RDS(on) holds voltage drop and I²R dissipation below 1 W even at 50 A continuous load, minimizing heat-sinking requirements on the backplane. Placed in-line between the 12 V distribution bus and the load, with a gate-resistor controlled turn-on for inrush current limiting, the device provides fast fault isolation. The PQFN footprint supports the high-density PCB layouts typical of OR-ing controllers.
Được đề xuất
Battery-Powered Motor Drive Switching
In battery-powered robotics, e-bike controllers, and 12-24 V cordless tools, the IQDH35N03LM5CGATMA1 functions as the low-side switch in three-phase half-bridge motor drivers. Its 66 A continuous rating covers motor currents up to ~40 A RMS with proper thermal design, while the OptiMOS 5 body diode reduces losses during recirculation events. The low Qg simplifies gate-driver selection, allowing direct MOSFET drive from 12 V gate-driver ICs. The PQFN 5x6 footprint enables compact motor-drive PCBAs for BLDC and PMSM motors used in industrial automation.
Được đề xuất
USB Power Delivery (USB-PD) High-Current Paths
The IQDH35N03LM5CGATMA1 supports the high-current 20 V / 5 A (100 W) paths required for USB Power Delivery 3.1 Extended Power Range (EPR) applications. Its 30 V VDS handles the 20 V PD bus with adequate transient margin, while the 0.35 mΩ RDS(on) limits voltage drop on the Source/Sink power path to less than 35 mV at 100 W. Used in laptop chargers, docking stations, and USB-PD hubs, the device enables compact PCB designs in PQFN 5x6 mm². The OptiMOS 5 technology's low Qrr body diode improves efficiency during fast load-step transitions typical of USB-PD negotiated profile changes.
Được đề xuất
Industrial 12 V / 24 V Bus Switching
Industrial PLCs, factory automation controllers, and rugged computing platforms benefit from the IQDH35N03LM5CGATMA1's robustness in 24 V nominal DC distribution systems where sustained voltages stay within 28 V. Its 30 V rating provides 2 V of margin above the 24 V bus transient envelope, while the PQFN 5x6 footprint simplifies integration with industrial-grade PCB stackups. The 66 A continuous rating supports high-power actuator and motor-driver stages. Designers appreciate the part's compatibility with the wide Infineon OptiMOS 5 ecosystem, allowing unified BOM across multiple industrial product variants.
Được đề xuất
Telecom and Server Power Conversion
In -48 V telecom rectifier intermediate bus architectures (IBAs), the IQDH35N03LM5CGATMA1 is used at the 12 V intermediate bus converter (IBC) output stage where 30 V devices are appropriate. Its low RDS(on) and fast body-diode recovery deliver high efficiency at the 100-200 kHz switching frequencies typical of digital IBC topologies. The 5x6 PQFN footprint matches the industry-standard power-stage layout used by leading telecom OEM reference designs. Combined with Infineon's gate-driver and controller portfolio, this part supports design-in for hyperscale data center power delivery.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQDH35N03LM5CGATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQDH35N03LM5CG | BSZ065N03LSATMA1 | ISC011N03L5SATMA1 | IRFH8318TRPBF | BSC066N06NSATMA1 | BSC0902NSATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-TTFN-9-U02 (PQFN 5x6 mm²) - same | PG-TTFN-9-U02 (PQFN 5x6 mm²) - same | PG-TTFN-9-U02 (PQFN 5x6 mm²) - same | PQFN 5x6 (8EP) - same footprint | PG-TTFN-9-U02 - same | PG-TTFN-9-U02 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-to-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 60 V | 30 V |
| On-Resistance RDS(on) at VGS=10V | 0.35 mΩ | 0.35 mΩ | 0.65 mΩ | 1.1 mΩ | 0.6 mΩ | 6.6 mΩ | 9.0 mΩ |
| Continuous Drain Current (ID) | 66 A (Ta) | 66 A | 40 A | 37 A | 50 A | 70 A | 31 A |
| Technology | OptiMOS 5 trench | OptiMOS 5 trench | OptiMOS 5 | OptiMOS 5 | IR HEXFET | OptiMOS 2 | OptiMOS |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Industry-lowest RDS(on) in PQFN 5x6 at 30V VDS (vsBSZ065N03LSATMA1)
- Higher continuous current rating at Ta (vsISC011N03L5SATMA1)
- OptiMOS 5 generation with integrated Schottky-like body diode (vsIRFH8318TRPBF)
- 30 V rating matches 12 V application envelope with minimal margin (vsBSC066N06NSATMA1)
Ghi chú thiết kế
Estimated: at 50 A continuous drain current and RDS(on) of 0.35 mΩ, conduction loss equals I² × RDS(on) = 50² × 0.00035 = 0.875 W. Power dissipation of 2.5 W at Ta (25 °C ambient) is the absolute ceiling, so the part requires substantial copper area on the drain tab to spread heat. According to the Infineon datasheet, the PG-TTFN-9-U02 package thermal resistance from junction to ambient (θJA) with 1 sq inch of 2-oz copper is approximately 50 °C/W. With proper top-side cooling, the package can sustain 278 W at Tc - enabling operation at much higher drain currents in pulsed-mode switching regulators.
Layout for the PG-TTFN-9-U02 demands top-side cooling and an extensive copper pour on the drain pad. The exposed drain pad must be soldered to a thermal via array connecting to inner-layer copper heat-spreaders. Per Infineon's application note on PQFN layout, place at least 4 thermal vias in the drain pad with 0.3 mm drill / 0.5 mm pad, and minimize the source trace inductance to less than 1 nH by using a Kelvin-source connection at the gate-driver ground return. The 5x6 mm² footprint is small for the current rating, so PCB designers must use 2-oz copper or heavier on outer layers.
Do not operate the IQDH35N03LM5CGATMA1 above VGS = ±20 V - the thin gate oxide will rupture. At 12 V VCC gate-drive, add a 10 kΩ gate pull-down resistor to ensure the MOSFET stays off during controller startup. Avoid using the device on 24 V industrial buses where sustained transients can exceed 30 V; derate to a 24 V-rated part instead. The OptiMOS 5 monolithic body diode has improved reverse recovery but is not a true Schottky - in dead-time-critical synchronous rectification at >500 kHz, use an external Schottky or carefully tune the controller's adaptive dead-time to minimize body-diode conduction.
For high di/dt switching (>5 A/ns), the source inductance must be minimized. Use a Kelvin-source connection (pin 2/3/6/7) for the gate return, separating it from the power source current path. Place the gate-driver IC physically close to the gate pin (pin 4) with a 10 Ω gate resistor to dampen ringing. Per the Infineon OptiMOS application handbook, the maximum recommended loop inductance for a 30 V buck stage is <2 nH to keep voltage overshoot below 40 V during switching transients.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Halogen-free per PG-TTFN-9-U02 package declaration. Not AEC-Q100 qualified - this is a commercial/industrial grade part; for automotive applications, choose an AEC-Q100 qualified Infineon OptiMOS variant.
