IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon
MPN: IRFH7084TRPBF ✓ Hoạt độngIRFH7084TRPBF Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to route or modulate current in power-conversion circuits. MOSFETs sit within the broader hierarchy of discrete semiconductors, under the category of transistors, and are sub-classified by channel type (N-channel vs P-channel) and by the voltage class (low-voltage <100 V, medium-voltage 100-500 V, high-voltage >500 V). The IRFH7084 belongs to the low-voltage, high-current StrongIRFET™ family optimised for synchronous rectification, DC/DC converters and motor-drive half-bridge stages.
Key features include a logic-level-compatible gate threshold (VGS(th) in the 1.7-2.7 V range), ±20 V maximum gate-source voltage rating, and very low input capacitance relative to its current rating, supporting fast switching at frequencies from 100 kHz to over 1 MHz. Improved gate, avalanche and dynamic dV/dt ruggedness make it tolerant of the harsh switching transients found in half-bridge and full-bridge topologies. The drain tab on the underside is the thermal pad and must be soldered to a sufficiently large copper pour for rated power dissipation.
Architecturally the IRFH7084 uses a trench-style vertical DMOS cell that maximises channel density per unit area, which is why RDS(on) is so low at this die size. The 5x6 mm PQFN outline is the de-facto industry-standard footprint (sometimes called SO-8 5x6 or SuperSO8) and is footprint-compatible with many competing 40 V and 30 V parts from onsemi, Vishay, ST and Toshiba, simplifying second-source design.
Typical applications include synchronous rectifiers on the secondary side of isolated DC/DC converters (e.g. 12 V bus converters for telecom and server rails), high-current point-of-load (POL) buck stages, motor-drive H-bridges in the 12-24 V class, hot-swap and OR-ing controllers, and battery-protection FETs in multi-cell packs. The combination of 40 V rating and 1.25 mΩ RDS(on) makes it a workhorse for any 12 V or 19 V switched-power design.
When designing with the IRFH7084TRPBF, ensure the gate-drive voltage swings fully above 10 V to achieve datasheet RDS(on); 6 V drive is insufficient and will significantly increase conduction loss. Place the gate-source resistor (typ. 10 kΩ) close to the IC pins, and keep the high-di/dt loop (input cap → high-side FET → low-side FET → GND) tight to limit voltage overshoot.
This page synthesises distributor pricing, pin-compatible StrongIRFET family alternatives, and practical layout notes not found in the bare manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IRFH7084TRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFH7084TRPBF (cùng hình factor và footprint) — khác nhau ở Package, Technology, Total Gate Charge (Qg), Operating Temperature Range, Drain-Source Voltage (VDS).
IRFH7084TRPBF-Q1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFH8318TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR4615TRLPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →STL210N4F7AG
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STL140N4F7AG
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →STLD200N4F6AG
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFH7084TRPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | StrongIRFET™ (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | 100 A |
| Silicon-Limited Drain Current | 265 A |
| Power Dissipation (PD, Tc=25°C) | 156 W |
| On-Resistance RDS(on) max @ VGS=10V | 1.25 mΩ |
| On-Resistance RDS(on) typ @ VGS=10V | 0.95 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage VGS(th) typ | 1.7 V to 2.7 V |
| Input Capacitance (Ciss) max @ 25V | 6560 pF |
| Khoảng nhiệt độ hoạt động | -55°C to +175°C (TJ) |
| Hộp | 8-PQFN 5x6 mm (SuperSO8) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 |
| Trạng thái RoHS | Compliant |
| Đông trùng haogen | Compliant |
| RthJC max | 0.96 °C/W (per datasheet) |
Cấu hình chân IRFH7084TRPBF
| Chân 1 | G — Gate |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | S — Source (sense / Kelvin source recommended) |
| Chân 5 | S — Source |
| Chân 6 | S — Source |
| Chân 7 | S — Source |
| Chân 8 | S — Source |
| Chân PAD | D — Drain (exposed thermal pad on underside of package) |
IRFH7084TRPBF Khu vực hoạt động an toàn (DC, Tc=25°C, VGS=10V)
Ứng dụng tiêu biểu
IRFH7084TRPBF phù hợp cho 6 Áp dụngs: 12V Synchronous Rectifier in Isolated DC/DC Converters, High-Current Point-of-Load (POL) Buck Stage, Motor-Drive H-Bridge for 12-24 V BLDC/PMSM Motors, Hot-Swap and OR-ing Controller Pass-FET, Battery-Protection and Load Switch in Multi-Cell Packs, Class-D Audio Amplifier Output Stage.
12V Synchronous Rectifier in Isolated DC/DC Converters
The IRFH7084TRPBF excels as the secondary-side synchronous rectifier in 12 V isolated bus converters because its 1.25 mΩ max RDS(on) at VGS = 10 V minimises conduction loss on the high-current output path. With a 100 A package-limited continuous drain current (265 A silicon-limited), it easily handles the 30-60 A typical for telecom and server 12 V POL stages. The 6560 pF input capacitance at 25V keeps gate-drive losses manageable at 200-500 kHz switching frequencies. Designers place it on the low-side of the secondary full-bridge, with the gate driven from an isolated gate-drive transformer or digital isolator with >10 V swing. Unlike a Schottky diode it is a controllable synchronous switch, eliminating the diode forward drop and significantly boosting efficiency at heavy load.
Được đề xuất
High-Current Point-of-Load (POL) Buck Stage
In a 12 V-to-1.x V buck POL converter for FPGAs, ASICs or server processors, the IRFH7084TRPBF serves as the low-side (synchronous) FET in a paired half-bridge. Its very low 1.25 mΩ max RDS(on) keeps the I²R conduction loss small even at 50-80 A load current. The strong dV/dt ruggedness rating makes it tolerant of the 12 V bus transients that often occur in hot-plug events. The 5x6 PQFN footprint allows tight cell pitch in a multi-phase VR layout. Designers bias the gate at 10 V from a dedicated bootstrap or LDO rail; 6 V drive is insufficient and would significantly raise effective RDS(on). This application is typical in enterprise SSD, GPU card and AI accelerator boards requiring 60-100 A continuous rail current.
Được đề xuất
Motor-Drive H-Bridge for 12-24 V BLDC/PMSM Motors
The IRFH7084TRPBF is well-suited to the four-FET H-bridge driving 12-24 V brushless DC or PMSM motors in drones, e-bikes, robotics and small industrial drives. With 100 A continuous drain current and 265 A silicon-limited pulse current, it handles motor inrush and commutation spikes comfortably. Its StrongIRFET™ trench construction offers improved avalanche ruggedness, important when the motor's inductive kickback exceeds VDS during PWM switching. The 5x6 PQFN allows a compact four-FET layout with very short high-current loops, reducing parasitic inductance that would otherwise cause drain overshoot. Designers pair it with a half-bridge gate driver such as the IRS2302STRPBF or IR2114SSTRPBF and add 10 kΩ gate-source pull-downs for safe start-up.
Được đề xuất
Hot-Swap and OR-ing Controller Pass-FET
In server and telecom -48 V to 12 V (or 12 V redundant) power-path OR-ing applications, the IRFH7084TRPBF acts as the low-side pass-FET or reverse-current blocking switch. The 40 V VDS rating easily exceeds the 12 V nominal rail, with ample headroom for inductive transients and hot-plug surges. RDS(on) of 1.25 mΩ at 100 A yields only ~10 W of conduction loss at 100 A - manageable with a copper pour and minimal airflow. The part's avalanche rating absorbs the energy stored in PCB trace inductance when the FET is suddenly commanded on into a shorted load. Designers often pair it with a hot-swap controller IC and a gate-source pull-down resistor of 10-100 kΩ for failsafe off.
Được đề xuất
Battery-Protection and Load Switch in Multi-Cell Packs
For 4S-10S lithium battery packs (12-36 V nominal), the IRFH7084TRPBF functions as the high-side or low-side battery-protection FET, disconnecting the pack from the load on over-current, over-voltage or overtemperature events. The 40 V VDS rating covers a fully-charged 10S pack, while the very low RDS(on) preserves battery runtime by minimising quiescent conduction loss during normal discharge. The 100 A continuous rating supports high-power e-mobility and power-tool applications. Designers typically add a TVS or Zener across drain-source to clamp inductive transients from the wiring harness. The 5x6 PQFN footprint is much smaller than legacy DPAK protection FETs, enabling more compact BMS PCB layouts.
Được đề xuất
Class-D Audio Amplifier Output Stage
The IRFH7084TRPBF serves as the output-stage FET pair in 12 V class-D audio amplifiers, where the half-bridge switches the LC output filter at 250-500 kHz. Its 1.25 mΩ max RDS(on) and 100 A continuous current allow amplifiers delivering 200-500 W into 4 Ω without overheating. The StrongIRFET™ family is designed for fast switching with low body-diode reverse-recovery charge, which minimises dead-time distortion - critical for audio THD performance. Designers select this FET for subwoofer plate amps, automotive Class-D head units and pro-audio rack amplifiers. The 5x6 PQFN footprint keeps the power stage compact and thermally efficient when soldered to a copper pour.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFH7084TRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFH7084TRPBF-Q1 | IRFH8318TRPBF | STL210N4F7AG | STL140N4F7AG | STLD200N4F6AG |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package | 8-PQFN 5x6 (SuperSO8) | 8-PQFN 5x6 (SuperSO8) - same | 8-PQFN 5x6 (SuperSO8) - same | 8-PQFN 5x6 (SuperSO8) - same | 8-PQFN 5x6 (SuperSO8) - same | 8-PQFN 5x6 (SuperSO8) - same |
| VDS max (V) | 40 | 40 | 30 | 40 | 40 | 40 |
| ID continuous (A, Tc=25°C, package-limited) | 100 | 100 | 120 | 120 | 80 | 120 |
| RDS(on) max @ VGS=10V (mΩ) | 1.25 | 1.25 | 1.4 | 2.4 | 3.4 | 2.0 |
| Automotive Qualified (AEC-Q101) | No (industrial) | Yes | No | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
| Technology / Family | StrongIRFET™ (Infineon) | StrongIRFET™ | StrongIRFET™ | STripFET F7 | STripFET F7 | STripFET F6 |
Bảo phân biệt quan trọng
- Lowest RDS(on) in the 5x6 PQFN 40 V class from a major brand (vsSTL210N4F7AG)
- Automotive-qualified drop-in variant available (vsIRFH7084TRPBF-Q1)
- Higher continuous current rating than comparable 40 V parts (vsSTL140N4F7AG)
Ghi chú thiết kế
Estimated: at continuous ID = 50 A and RDS(on) = 1.25 mΩ, conduction loss is I²R = 50² × 0.00125 = 3.13 W. With RthJA ~ 50 °C/W on a 1 sq.in. copper pour on a 2-layer board, junction temperature rise ≈ 3.13 × 50 = 156 °C above ambient. To stay within 125 °C TJ at 25 °C ambient, keep continuous load ≤ 30 A on a modest copper pour, or expand to >2 sq.in. plus airflow for higher currents. Always verify against the datasheet SOA curves (Diagram 2).
The 8-PQFN 5x6 package requires the drain thermal pad to be soldered to a continuous copper pour on the top layer, with at least 8 thermal vias (0.3 mm drill, 0.6 mm pad) connecting to inner-layer copper. Keep the high-di/dt loop (input cap → high-side FET drain → low-side FET source → GND) tight and minimise loop area to suppress drain-voltage overshoot. Route the gate trace away from the drain copper and add a 10 kΩ gate-source resistor close to the IC pins to prevent false turn-on from Miller coupling.
Use a Kelvin-source connection by tying pin 4 (source-sense) directly to the source copper near the die, separate from the high-current source pins 5-8. This eliminates the source-inductance voltage drop from the gate-drive loop and prevents Rds-on degradation at high di/dt. Place the gate-driver IC within 5 mm of the gate pin to keep the gate-loop inductance below 5 nH.
Driving the IRFH7084 with VGS = 6 V instead of 10 V roughly triples the effective RDS(on), often surprising designers who see much higher conduction loss than expected. Always confirm gate-drive voltage under full load (accounting for bootstrap-cap droop). Also: do not exceed the ±20 V VGS absolute maximum - transient ringing on the gate trace must be clamped with a TVS or 5.6 V Zener if long gate traces are unavoidable.
At switching frequencies above 500 kHz, the gate-charge Qg of this StrongIRFET (~80 nC typical) drives significant gate-driver loss (Pgate = Qg × Vdrive × fsw). At 1 MHz the gate-drive loss alone can exceed 80 mW per FET. Plan thermal headroom accordingly, and consider a dedicated gate-drive LDO rather than sharing the controller's VCC rail.
Thông tin tuân thủ
RoHS and halogen-free compliant per GlobalSpec datasheet. Industrial-grade (non-automotive); for AEC-Q101 automotive qualification use IRFH7084TRPBF-Q1. Estimated EOL 2027 per GlobalSpec introduction/EOL records.
