IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
MPN: IRFR024NTRPBF ✓ Hoạt độngIRFR024NTRPBF Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in electronic circuits. The IRFR024NTRPBF belongs to the broader N-channel enhancement-mode MOSFET family, which sits within the discrete semiconductor power-switch hierarchy (MOSFET -> transistor -> discrete semiconductor). It is specifically engineered for low- to medium-frequency switching, where its low gate charge (Qg = 13.3 nC typical) and 55 V drain-source rating suit DC-DC conversion, motor drive, and relay-replacement functions in non-automotive industrial and consumer systems.
Key specifications include a maximum drain-source voltage (VDS) of 55 V, continuous drain current (ID) of 17 A at TC = 25 C, pulsed drain current of 60 A, maximum on-resistance of 75 mOhm at VGS = 10 V, gate threshold voltage (VGS(th)) of 2.0 V to 4.0 V, and a maximum junction temperature of 175 C. The DPAK surface-mount package has a junction-to-ambient thermal resistance (theta_JA) of approximately 50 C/W on a standard JEDEC 1-square-inch pad, with a junction-to-case rating (theta_JC) of 3.3 C/W enabling direct PCB heat-sinking via the drain tab.
Typical applications include DC-DC buck/boost converters, low-voltage motor drivers, solenoid and relay drivers, LED backlight switching, battery protection circuits in 12 V lead-acid systems, and general-purpose power switches in industrial and consumer equipment. The 55 V rating provides sufficient margin above the 24 V industrial bus and 12 V automotive transient environment for many systems, though for harsh load-dump environments a 60 V or 100 V part is preferred.
When designing with this part, calculate worst-case power dissipation as PD = ID^2 x RDS(on) x (1 + TJ derating factor) and verify that the resulting junction temperature stays below the 175 C maximum. The exposed drain tab doubles as both pin 2 (electrical) and a thermal pad; a sufficiently large copper pour (>= 1 sq inch) is critical to achieving the rated continuous current without thermal limiting.
This page synthesizes distributor pricing, parametric cross-reference data, and practical PCB-layout guidance beyond what appears in the manufacturer datasheet, helping procurement engineers and design engineers evaluate the IRFR024NTRPBF alongside true drop-in alternatives in the DPAK footprint.
Bộ thay thế dễ dàng lắp đặt cho IRFR024NTRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFR024NTRPBF (cùng hình factor và footprint) — khác nhau ở Package, Technology, Total Gate Charge (Qg), FET Type, MSL Level.
IRFR024N
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFRL024N
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
NTD3055-094
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SUD50N05-25L-E3
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
NVD5865NLT4G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR024NTRPBF Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Product Series | HEXFET Power MOSFET (5th generation) |
| Kiểu transitor | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) | 17 A (at TC = 25 C) |
| Pulsed Drain Current (IDM) | 60 A |
| On-Resistance (RDS(on)) | 75 mOhm max (at VGS = 10 V) |
| Gate-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Typical Gate Charge (Qg) | 13.3 nC |
| Total Power Dissipation (PD) | 45 W (at TC = 25 C) |
| Nhiệt độ mối nối hoạt động | -55 C to +175 C |
| Hộp | TO-252-3 (DPAK, SC-63), surface mount |
| Kiểu lắp đặt | Surface Mount |
| Packaging | Tape and Reel (TR) |
| RoHS Compliance | Compliant (Pb-free / PbF terminations) |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
Cấu hình chân IRFR024NTRPBF
| Chân 1 | Gate — Gate control input; drive with 10V for full enhancement |
| Chân 2 | Drain — Drain terminal; electrically and thermally connected to the exposed tab |
| Chân 3 | Source — Source terminal; reference for gate drive |
Khu vực hoạt động an toàn (DC, TJ = 175 C)
Ứng dụng tiêu biểu
IRFR024NTRPBF phù hợp cho 6 Áp dụngs: 12 V / 24 V Industrial DC-DC Buck Converter, Solenoid and Relay Driver, DC Motor Speed Control (PWM), LED Lighting and Backlight Driver, Battery Protection and Load Switching, Power OR-ing and Reverse Polarity Protection.
12 V / 24 V Industrial DC-DC Buck Converter
The IRFR024NTRPBF is well suited for the low-side switch position in non-isolated buck converters running from 24 V industrial rails down to 12 V or 5 V logic rails. Its 55 V VDS rating provides 30 V of headroom above the maximum 24 V nominal bus, comfortably absorbing inductive ringing and transient overshoots. The 75 mOhm RDS(on) at 10 V VGS keeps conduction losses moderate, and the 13.3 nC typical gate charge enables switching frequencies up to 100 kHz with reasonable driver losses. In a typical 24 V-to-5 V/5 A buck stage the MOSFET dissipates approximately 1.9 W continuous, well within DPAK capability when mounted on >= 1 square inch of copper pour.
Được đề xuất
Solenoid and Relay Driver
The IRFR024NTRPBF excels as a low-side switch for 12 V or 24 V solenoid and relay coils in industrial automation panels. Its 17 A continuous rating easily handles inrush current of typical 12 V relays (200-500 mA holding, 1-2 A inrush), and the 60 A pulsed rating covers the brief 10-50 ms inrush of larger contactors. The 75 mOhm RDS(on) keeps the saturation drop under 200 mV at 2 A, preserving coil voltage. Fast switching (typ tr/tf < 50 ns at 10 V drive) reduces dissipation during PWM-based proportional control of hydraulic or pneumatic solenoid valves.
Được đề xuất
DC Motor Speed Control (PWM)
For brushed DC motors up to 10 A continuous in 12 V or 24 V systems, the IRFR024NTRPBF serves as the low-side PWM switch in an H-bridge or half-bridge configuration. At 25 kHz PWM, switching losses are dominated by the 13.3 nC gate charge rather than crossover losses, allowing the part to run acceptably cool at 5 A continuous with modest copper pour. Its 55 V VDS withstands the back-EMF spikes generated by motor inductance during commutation, eliminating the need for an external flyback clamp in many 12 V applications.
Được đề xuất
LED Lighting and Backlight Driver
The IRFR024NTRPBF functions as a low-side current sink for high-brightness LED strings in architectural and signage lighting. Its 55 V VDS supports long LED chains (up to 15-18 white LEDs in series at 12-24 V input), and the 75 mOhm RDS(on) maintains regulation accuracy when PWM-dimming at 200 Hz-1 kHz. In a typical 24 V-to-350 mA LED driver stage the MOSFET dissipates under 1 W, requiring only a standard DPAK footprint. The PbF terminations make the part RoHS-compliant for consumer-facing lighting products.
Được đề xuất
Battery Protection and Load Switching
In 12 V lead-acid battery backup systems and UPS modules, the IRFR024NTRPBF is used as the load-disconnect switch. Its 17 A rating covers typical telecom and security panel loads, and the 55 V VDS handles the 15 V float-charge transients plus inductive ringing from relay coils on the load side. The standard-threshold VGS(th) of 2.0-4.0 V prevents accidental turn-on from leakage on the gate during battery float conditions. For higher-side (P-channel) disconnect requirements, consider the IRFR5505 (P-channel complementary part).
Được đề xuất
Power OR-ing and Reverse Polarity Protection
The IRFR024NTRPBF wired in reverse across the input rail acts as a discrete reverse-polarity protection device, blocking fault current within microseconds of a reversed battery connection. With 55 V breakdown it tolerates 24 V transient spikes, and its 75 mOhm RDS(on) keeps the forward drop under 1.5 V at 20 A (above continuous rating, so use within SOA). This topology is widely used in industrial control cabinets and telecom equipment where a wiring mistake would otherwise destroy downstream components.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFR024NTRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFR024N | IRFRL024N | NTD3055-094 | SUD50N05-25L-E3 | NVD5865NLT4G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology | onsemi |
| Package | TO-252-3 (DPAK) | TO-252-3 (DPAK) | TO-252-3 (DPAK) | TO-252-3 (DPAK) | TO-252-3 (DPAK) | TO-252-3 (DPAK) |
| VDS Max (V) | 55 V | 55 V | 55 V | 60 V | 55 V | 60 V |
| Continuous ID (A) | 17 A | 17 A | 17 A | 12 A | 50 A | 42 A |
| RDS(on) Max (mOhm) | 75 mOhm | 75 mOhm | 75 mOhm | 94 mOhm | 25 mOhm | 22 mOhm |
| VGS(th) (V) | 2.0 - 4.0 V | 2.0 - 4.0 V | 2.0 - 4.0 V | 2.0 - 4.0 V | 1.0 - 2.5 V (logic level) | 1.0 - 2.5 V (logic level) |
| Max Junction Temp (C) | 175 C | 175 C | 175 C | 175 C | 175 C | 175 C |
| RoHS / Pb-Free | Yes (PbF) | No (matte tin) | No (matte tin) | Yes | Yes (E3 suffix) | Yes |
Bảo phân biệt quan trọng
- Pb-free (PbF) tape-and-reel packaging for RoHS-compliant production (vsIRFR024N)
- Higher continuous current rating than the popular NTD3055-094 (vsNTD3055-094 (onsemi))
- Lower gate charge than larger-current DPAK alternatives (vsSUD50N05-25L-E3 (Vishay))
Ghi chú thiết kế
Estimated: at ID = 10 A continuous and RDS(on) = 75 mOhm at TJ = 25 C, conduction loss is PD = I^2 x R = 7.5 W. With the DPAK theta_JA of approximately 50 C/W on a 1-sq-in. copper pour, this produces a 375 C temperature rise - well above the 175 C junction limit. To handle 10 A continuous the part requires either a substantial copper pour (>= 4 sq in.), a dedicated heatsink, or active airflow. In practice, the IRFR024NTRPBF is best suited for 5-8 A continuous duty in surface-mount designs without external cooling.
Solder the exposed drain tab (Pin 2) to a copper pour on the PCB top layer, using multiple thermal vias to inner-layer copper for additional heat spreading. According to Infineon's DPAK layout guidelines, a minimum 0.5 oz copper pour of 1 sq in. is required to achieve the datasheet thermal ratings. Use a gate-drive resistor of 10-100 ohm to control ringing, and add a 10 kohm pull-down on the gate to prevent inadvertent turn-on during MCU reset.
Do not drive the gate with 3.3 V logic - the IRFR024NTRPBF is a standard-threshold part requiring at least 10 V VGS for full enhancement and minimum RDS(on). Driving with 3.3 V will leave the MOSFET in the linear region, causing high dissipation and possible thermal failure. For direct 3.3 V or 5 V MCU GPIO drive, use a logic-level N-channel MOSFET such as the IRLZ44N instead. Additionally, never exceed VGS = +/- 20 V (absolute maximum) - ESD events on the gate can permanently damage the thin gate oxide.
Keep the gate-drive loop (gate-driver output, gate resistor, MOSFET gate, source return) as small as possible to minimize parasitic inductance. For switching frequencies above 50 kHz, use a star-ground topology where the MOSFET source current returns directly to the input capacitor ground, separate from the analog ground of the controller. This prevents source-inductance-induced turn-on glitches and reduces EMI.
Thông tin tuân thủ
PbF suffix confirms RoHS-compliant lead-free terminations. NOT AEC-Q100 qualified - for automotive safety applications use an automotive-grade part. Halogen-free per Infineon product declaration. REACH SVHC compliant per current EU declarations.
