IRFR3504ZTRPBF - 40V 77A 9mΩ HEXFET N-Channel MOSFET | Infineon
MPN: IRFR3504ZTRPBF ✓ Hoạt độngIRFR3504ZTRPBF Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for switching and amplifying signals in power electronics. Within the broader semiconductor taxonomy, a MOSFET sits under discrete semiconductors -> transistors -> MOSFETs, and within the power-management family it serves as the primary switching element in DC-DC converters, motor drivers, and synchronous rectification. The HEXFET process refers to Infineon's hexagonal cell layout, which maximizes silicon utilization and minimizes RDS(on) per unit area.
Key features of this part include a 9 mΩ max RDS(on) at VGS=10 V, 30 nC typical total gate charge (Qg), logic-level VGS(th) of approximately 1.0–2.0 V enabling full enhancement at 4.5 V gate drive, 175 °C maximum operating junction temperature, and avalanche-rated construction for inductive-switching robustness. The device is qualified per JEDEC standards and supplied on tape-and-reel for high-volume automated assembly.
Typical applications include high-side/low-side switching in synchronous buck converters, BLDC and brushed DC motor drive, battery protection and load switching in 12 V automotive subsystems, solenoid and relay drivers, and OR-ing / hot-swap circuits. The 40 V drain-source rating provides ample headroom for nominal 12 V and 24 V bus rails including transients.
When designing with this device, gate-drive layout is critical: keep the gate-loop loop area under 1 cm² to limit ringing, use a gate-source resistor of 10–100 Ω to dampen oscillations, and derate continuous drain current for PCB copper area and ambient temperature. The DPAK footprint dissipates 90 W at TC=25 °C but only a fraction of that in free air; a thermal pad with sufficient copper pour is mandatory for high-current designs.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing an engineer-ready reference for sourcing and implementing this part.
Bộ thay thế dễ dàng lắp đặt cho IRFR3504ZTRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFR3504ZTRPBF (cùng hình factor và footprint) — khác nhau ở Package, Technology.
IRFR3504ZTRRPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR3504ZPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR1010Z
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR3607TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →STD64N4F6AG
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STD95N4F3
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR3504ZTRPBF Tỷ lệ tối đa & tính chất điện
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, TC=25°C) | 42 A |
| On-Resistance RDS(on) max @ VGS=10V | 9 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | 1.8 V (logic-level) |
| Total Gate Charge (Qg) typ | 30 nC |
| Power Dissipation (PD) at TC=25°C | 90 W |
| Nhiệt độ mối nối hoạt động | -55°C to +175°C |
| Hộp | TO-252AA (DPAK) surface mount |
| Kiểu lắp đặt | Surface Mount |
| Technology | HEXFET (N-Channel Silicon MOSFET) |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 (unlimited) |
| Avalanche Rated | Yes (improved repetitive avalanche rating) |
Cấu hình chân IRFR3504ZTRPBF
| Chân 1 | Gate — Logic-level gate drive input (5V compatible) |
| Chân 2 | Drain — Power drain terminal; electrically tied to exposed tab |
| Chân 3 | Source — Power source terminal (power return) |
| Chân Tab | Drain (Tab) — Exposed metal tab - same node as Pin 2 (Drain); solder to thermal copper pour |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IRFR3504ZTRPBF phù hợp cho 6 Áp dụngs: Synchronous Buck DC-DC Converter, BLDC / Brushed DC Motor Drive, 12 V Automotive Load Switching, Battery Protection / Hot-Swap OR-ing, Solenoid and Relay Driver, Power Tool / Cordless Appliance Drive.
Synchronous Buck DC-DC Converter
The IRFR3504ZTRPBF's 9 mΩ RDS(on) and 30 nC Qg make it an excellent low-side synchronous rectifier in 12 V-to-3.3 V/5 V buck converters up to 20 A continuous. Its 40 V VDS provides ample margin above a 12 V nominal bus including ringing, and the logic-level VGS(th) of 1.8 V lets a 5 V gate driver fully enhance the channel. In a typical 4-switch buck topology, this part replaces Schottky rectifiers to boost efficiency by 3–5%. Mount the DPAK tab to at least 1 sq. inch of copper to handle continuous conduction loss without thermal throttling.
Được đề xuất
BLDC / Brushed DC Motor Drive
With 42 A continuous drain current and a 175 °C junction rating, the IRFR3504ZTRPBF drives small to mid-sized BLDC and brushed DC motors up to roughly 30 A per phase in three-phase H-bridge topologies. Its avalanche-rated construction absorbs the back-EMF energy during PWM commutation and braking, while 9 mΩ RDS(on) keeps I²R conduction loss manageable - critical for battery-powered tools and e-bikes where every watt of loss reduces runtime. Pair it with the DRV8301DCAR or DRV8872DDAR gate driver for a complete half-bridge stage.
Được đề xuất
12 V Automotive Load Switching
The 40 V VDS rating of the IRFR3504ZTRPBF comfortably exceeds the 12 V automotive bus under load-dump transients up to 35 V, making it a drop-in high-side or low-side switch for body-electronics modules. With 9 mΩ RDS(on), a 10 A load only dissipates 0.9 W - low enough for the DPAK package to handle with a modest PCB copper pour. It is widely used in LED lighting modules, seat controllers, and accessory power outlets where logic-level gate drive is provided directly by a 5 V microcontroller GPIO or body controller IC.
Được đề xuất
Battery Protection / Hot-Swap OR-ing
The IRFR3504ZTRPBF serves as a low-loss ideal-diode OR-ing element between paralleled battery packs or for hot-swap insertion in 12 V systems. Its 9 mΩ RDS(on) drops only 90 mV at 10 A - far below a Schottky diode - and the body diode conducts during transient reverse events. In hot-swap circuits, the MOSFET's 175 °C rating and avalanche energy absorb inrush energy as the load capacitance charges through a controlled soft-start ramp.
Được đề xuất
Solenoid and Relay Driver
Industrial solenoid and relay drivers benefit from the IRFR3504ZTRPBF's 42 A peak current capability and logic-level gate drive. A single DPAK-mounted part can switch 24 V solenoids up to 10 A continuous, dissipating only a few watts under steady state. The avalanche rating absorbs the inductive kickback when the solenoid de-energizes, eliminating the need for an external flyback diode in many designs and reducing PCB area.
Được đề xuất
Power Tool / Cordless Appliance Drive
In cordless drills, leaf blowers, and other 18 V/20 V lithium-ion battery-powered tools, the IRFR3504ZTRPBF drives brushed universal motors with low conduction loss thanks to 9 mΩ RDS(on) and minimal gate drive complexity at logic-level VGS. Its small DPAK footprint simplifies compact motor-control PCB layouts, while the 175 °C junction rating tolerates the high ambient temperatures inside sealed tool housings. Pair it with a low-cost gate driver like the FAN7392 or DRV8873HPWPRQ1 for a robust, field-proven power stage.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFR3504ZTRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFR3504ZTRRPBF | IRFR1010Z | IRFR3607 | STD64N4F6AG | STD95N4F3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | STMicroelectronics |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| VDS max | 40 V | 40 V | 55 V | 75 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 9 mΩ | 9 mΩ | ~10.5 mΩ | ~14 mΩ | ~9 mΩ | ~12 mΩ |
| Continuous ID (TC=25°C) | 42 A | 42 A | 42 A | 56 A | 64 A | 95 A |
| Logic-Level Gate Drive (5V) | Yes | Yes | Yes | No (standard level) | Yes | No (standard level) |
| Power Dissipation (PD) | 90 W | 90 W | 110 W | 140 W | 100 W | 110 W |
Bảo phân biệt quan trọng
- Logic-level gate drive at 5V VGS without bootstrap (vsIRFR3607)
- Lower RDS(on) than legacy IRFR3607 at same package (vsIRFR3607)
- Verified cross-brand drop-in with STD64N4F6AG (vsSTD64N4F6AG)
Ghi chú thiết kế
The DPAK package is rated 90 W at TC=25°C, but in free air (TA=25°C) only a few watts can be dissipated without substantial PCB copper. Estimate: with 1 sq. inch of 2-oz copper pour under the tab, theta_JA falls to roughly 40 °C/W, allowing ~3 W continuous at 25 °C ambient. For 10 A continuous conduction (10 mΩ × 100 A² = ~10 W), use at least 4 sq. inches of copper or an active heatsink. Always derate TC by at least 50 °C to keep the junction below the 175 °C absolute maximum.
Solder the exposed tab with a thermal pad designed for DPAK (e.g. PAD shape with 6 mm² center void). Use multiple thermal vias (0.3 mm diameter, 1 mm pitch) under the tab to inner copper planes. Gate-drive traces should be at least 0.2 mm wide, routed away from the drain switching node, and the gate resistor (10–100 Ω) placed within 5 mm of the gate pin to dampen parasitic oscillations during fast switching edges.
Do not exceed VGS=±20 V - a 12 V gate driver above 18 V can damage the gate oxide. Also avoid operating at VGS below 4.5 V: the part's logic-level rating assumes a fully-enhanced channel, and partial enhancement at 2–3 V gate drive causes the MOSFET to operate in its linear region with high losses and potential thermal runaway. Always verify drain-source voltage margin under worst-case transient conditions (load dump, inductive kickback) before finalizing the design.
In synchronous buck or half-bridge topologies, the high dv/dt on the switching node (up to 5 V/ns) can couple into the gate trace through the MOSFET's Cgd (Miller capacitance). Add a 10 kΩ gate-source pull-down resistor to keep the FET off during start-up transient, and consider a small RC snubber (10 Ω + 1 nF) across drain-source if ringing exceeds 10% of VDS. The 30 nC Qg is fast enough that gate-drive loop inductance must stay below 10 nH - keep the gate driver within 10 mm of the gate pin.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. JEDEC-qualified per datasheet description. Halogen-free status not explicitly stated in web data.
