IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon
MPN: IRFR540ZTRLPBF ✓ Hoạt độngIRFR540ZTRLPBF Tóm tắt
Key specifications include a maximum drain-source voltage (VDS) of 100 V, continuous drain current (ID) of 35 A at TC, pulsed drain current of 110 A, and static drain-source on-resistance (RDS(on)) of 28.5 mΩ maximum at VGS = 10 V. The gate charge (Qg) is rated at 39 nC typical. Maximum power dissipation is 91 W at TC, and the operating junction temperature range is -55 °C to +175 °C, exceeding the standard 150 °C industrial limit.
The IRFR540ZTRLPBF uses Infineon's advanced planar process technology, optimized for low conduction loss and high repetitive avalanche ruggedness. The 100 V BVDSS rating combined with the 28.5 mΩ on-resistance places this part in the sweet spot for 48 V automotive and industrial switching applications, where it competes directly with similarly rated parts from STMicroelectronics, onsemi, and Vishay.
Typical applications include DC-DC converters in automotive ECU power stages, motor drive half-bridges, solenoid and relay drivers, synchronous rectifiers in isolated telecom DC-DC bricks, and high-current hot-swap controllers. The TO-252AA (DPAK) footprint with an exposed drain tab allows efficient PCB-side heat spreading.
When designing with this MOSFET, ensure the gate drive swings fully to 10 V for the lowest RDS(on). A gate-source pull-down resistor (10 kΩ minimum) prevents unwanted turn-on during supply transitions. For switching applications above 50 kHz, prioritize minimizing gate-loop and power-loop PCB inductance.
This page synthesizes distributor pricing, drop-in cross-brand alternatives, and practical design notes that go beyond the manufacturer datasheet to help engineers select and source this part efficiently.
Bộ thay thế dễ dàng lắp đặt cho IRFR540ZTRLPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFR540ZTRLPBF (cùng hình factor và footprint) — khác nhau ở Technology, Package, Operating Junction Temperature.
IRFR540ZTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR540ZPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFU540ZPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
AUIRFR540Z
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR3710ZTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR4510
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STD30N10F7
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR540ZTRLPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC | 35 A |
| Pulsed Drain Current (IDM) | 110 A |
| Static Drain-Source On-Resistance (RDS(on)) | 28.5 mΩ max at VGS=10V |
| Total Gate Charge (Qg) | 39 nC |
| Power Dissipation (PD) at TC | 91 W |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Technology | IR MOSFET™ / HEXFET® |
| Hộp | TO-252AA (DPAK) surface mount |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 3 (Gate, Drain, Source) |
| Automotive Qualification | AEC-Q101 qualified |
| Lead-Free / RoHS | Yes (PBF suffix) |
| Packaging | Tape & Reel (TR-L), 800-piece leader/trailer |
Cấu hình chân IRFR540ZTRLPBF
| Chân 1 | Gate — Gate drive input; logic-level or standard 10V VGS drive |
| Chân 2 | Drain — Drain connection (also electrically bonded to the metal tab/backside) |
| Chân 3 | Source — Source connection; typically tied to circuit ground |
| Chân TAB | Drain (Tab) — Exposed metal tab electrically connected to Drain; solder to PCB copper pour for thermal dissipation |
Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
IRFR540ZTRLPBF phù hợp cho 7 Áp dụngs: 48 V Automotive ECU Power Stages, Synchronous Rectifier in Telecom DC-DC, Motor Drive Half-Bridges, Solenoid and Relay Driver Switches, Hot-Swap and Load Switch Controllers, LED Lighting Driver Switches, Battery Management and Protection Switches.
48 V Automotive ECU Power Stages
The IRFR540ZTRLPBF's 100 V BVDSS, 35 A continuous ID rating, and AEC-Q101 qualification make it a strong fit for 48 V automotive ECU power conversion stages where MOSFETs must handle repetitive load transients from actuators, pumps, and DC-DC converters. Its 28.5 mΩ max RDS(on) at VGS = 10 V keeps conduction losses under 12 W at 20 A, manageable with a 1 sq-inch copper pour. The TO-252AA (DPAK) tab is soldered to a thermal land on the PCB, providing theta_JA around 50 °C/W for typical 4-layer FR4 layouts. Compared with lower-voltage 40 V parts, the 100 V rating offers comfortable headroom for 48 V load-dump transients up to 65 V, eliminating the need for additional TVS protection in many designs.
Được đề xuất
Synchronous Rectifier in Telecom DC-DC
In 48 V-input isolated telecom DC-DC bricks, the IRFR540ZTRLPBF serves as a low-side synchronous rectifier thanks to its 28.5 mΩ RDS(on), 39 nC Qg, and 100 V BVDSS. The 100 V rating provides margin above 72 V telecom rail transients while the 91 W power dissipation rating handles high secondary-side currents without thermal derating. The DPAK package supports reflow assembly and tab soldering for low thermal resistance. For high-frequency (>200 kHz) designs, the IRFR540ZTRLPBF's Qg of 39 nC is acceptable but switching losses dominate; designers should evaluate lower-Qg parts such as the IRFH5015TRPBF for MHz operation.
Được đề xuất
Motor Drive Half-Bridges
The IRFR540ZTRLPBF is well-suited to low-side switches in 24 V brushed DC motor half-bridges and H-bridges for industrial automation. Its 35 A continuous current rating supports motors up to roughly 500 W mechanical output, and the 110 A pulsed rating handles motor stall transients for the typical 100 ms duration specified by motor manufacturers. The 28.5 mΩ RDS(on) keeps I²R conduction losses low, while the TO-252AA package can be heatsink-attached for continuous high-current operation. The AEC-Q101 qualification provides reliability margin in industrial environments with thermal cycling and vibration.
Được đề xuất
Solenoid and Relay Driver Switches
For switching inductive loads such as 24 V solenoids, relays, and contactors, the IRFR540ZTRLPBF provides the ruggedness of the IR MOSFET™ process with avalanche-rated single-pulse energy capability. The 100 V BVDSS comfortably absorbs flyback voltage spikes from typical 24 V solenoids (VCLAMP up to 60 V with TVS or 80 V with snubber), while the 35 A ID supports high inrush currents from DC solenoids and relay coils. The TO-252AA (DPAK) package enables compact PCB designs. Designers should add a gate-source pull-down resistor (10 kΩ) to prevent unwanted turn-on during supply transients, especially in automotive load-dump scenarios.
Được đề xuất
Hot-Swap and Load Switch Controllers
The IRFR540ZTRLPBF serves as the main pass-element in -48 V telecom hot-swap controllers and 24 V/48 V load switches. Its 100 V BVDSS, 28.5 mΩ RDS(on), and 35 A ID rating allow continuous load currents up to 25 A with proper PCB thermal design, while its repetitive avalanche rating handles the inrush transients when bulk capacitors charge. The DPAK package provides sufficient thermal mass for sub-second fault conditions. Compared with integrated hot-swap ICs, a discrete MOSFET solution using the IRFR540ZTRLPBF offers flexibility for higher current or higher voltage applications.
Được đề xuất
LED Lighting Driver Switches
In high-brightness LED lighting drivers and architectural lighting controllers, the IRFR540ZTRLPBF functions as a PWM switching element for buck and boost converters driving 1-5 A LED strings. Its low RDS(on) of 28.5 mΩ minimizes conduction losses at typical LED currents of 1-3 A, while the 100 V rating provides headroom for 48 V LED strings with inductive transients. The DPAK package simplifies thermal management with tab-soldered copper pours. For applications requiring analog dimming, the device's low gate threshold allows direct MCU PWM drive with 3.3 V logic-level translation via small-signal driver stages.
Được đề xuất
Battery Management and Protection Switches
In battery management systems (BMS) for 24 V or 36 V battery packs and e-mobility applications, the IRFR540ZTRLPBF operates as a low-side disconnect switch or active balancing element. The 100 V BVDSS handles the maximum stack voltage with margin, while the 35 A continuous ID supports high discharge currents in power tools and e-bike applications. AEC-Q101 qualification makes it suitable for automotive-grade battery systems. The low RDS(on) of 28.5 mΩ ensures low power dissipation during continuous discharge, extending battery runtime. For higher-side switching, a P-channel variant or charge-pump driver is preferred.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFR540ZTRLPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFR540ZTRPBF | IRFR540ZPBF | IRFU540ZPBF | AUIRFR540Z | IRFR3710Z | STD30N10F7 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | STMicroelectronics |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-251AA (IPAK, through-hole) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID) | 35 A | 35 A | 35 A | 35 A | 35 A | 30 A | 30 A |
Bảo phân biệt quan trọng
- AEC-Q101 automotive qualification with 175 °C max junction temperature (vsIRFR540ZTRPBF)
- 35 A continuous drain current vs lower-rated cross-brand equivalents (vsSTD30N10F7)
- Lower RDS(on) and higher pulsed current capability than industry-standard IRF540 (vsIRF540 (legacy 1970s design))
Ghi chú thiết kế
Estimated: at VGS=10V, ID=20A continuous, RDS(on)=28.5 mΩ, conduction loss ≈ 11.4 W. With a 1 sq-inch copper pour on a 4-layer FR4 PCB, theta_JA is approximately 50 °C/W, yielding a junction temperature rise of roughly 145 °C at TA=70 °C, exceeding the 175 °C max rating. For continuous 20 A operation, either reduce current to ~15 A, increase PCB copper area to 2+ sq inches, or attach a small clip-on heatsink. The DPAK tab must be soldered to the thermal land with sufficient via stitching for heat transfer to inner layers.
Minimize parasitic inductance in the power loop (drain-source switching loop) by keeping the input capacitors, MOSFET drain, and source return paths as compact as possible - typically a 5 mm × 5 mm loop area. Use a 4-layer PCB with a dedicated ground plane directly under the DPAK footprint. Gate drive traces should be at least 0.5 mm wide and routed away from drain node transients to avoid capacitive coupling-induced false triggering. Place a 10 kΩ gate-source pull-down resistor (low-side) or 100 kΩ (high-side via charge pump) to prevent unwanted turn-on during supply transitions.
Do not exceed VGS = ±20 V (gate-source absolute maximum). The IRFR540ZTRLPBF is a standard-threshold (not logic-level) MOSFET and requires at least 6-8 V to achieve low RDS(on); driving it with 3.3 V logic without a gate driver will leave it in the linear region with very high losses. For 48 V automotive load-dump protection, add a TVS clamp (e.g., 90 V bidirectional) at the drain node to limit transient peaks below the 100 V BVDSS rating. Verify avalanche energy rating for repetitive inductive switching applications.
For switching frequencies above 50 kHz, gate-loop inductance becomes critical. A 10 nH gate loop combined with 39 nC Qg produces a voltage spike of V = L × dI/dt that can overshoot the VGS maximum during fast turn-off. Use a gate-drive resistor (10-47 Ω) in series with the gate to dampen ringing, and place a small ferrite bead or 10 Ω gate-source resistor if oscillation persists. The IRFR540ZTRLPBF's internal gate resistance is low, so external damping is essential in half-bridge configurations where cross-conduction could destroy the device.
Thông tin tuân thủ
RoHS compliant per PBF suffix. AEC-Q101 automotive qualified per Xecor comparison data. Lead-free (Pb-free) confirmed by part number suffix. Halogen-free status not explicitly stated in verified data - marked unknown.
