IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
MPN: IPD60R145CFD7ATMA1 ✓ Hoạt độngIPD60R145CFD7ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for switching and amplifying electronic signals. As a discrete power semiconductor, it belongs to the superjunction MOSFET class, which itself sits within the broader hierarchy of MOSFETs -> transistors -> discrete semiconductors -> active electronic components. CoolMOS CFD7 specifically targets ZVS and LLC applications, where the integrated fast body diode eliminates the need for an external anti-parallel diode and reduces reverse-recovery losses.
Key features of the IPD60R145CFD7 include a 600V drain-source breakdown voltage, 16A continuous drain current at T<sub>C</sub>=25C, 145 mOhm maximum on-resistance, and a fast body diode with low Q<sub>rr</sub>. Compared to the prior CFD2 generation, the CFD7 platform offers reduced gate charge (Q<sub>g</sub>) and improved figure-of-merit (R<sub>DS(on)</sub> x Q<sub>g</sub>), enabling higher switching frequency operation and smaller magnetics in resonant converters. The TO-252AA (DPAK) package is rated for 83W power dissipation at T<sub>C</sub>=25C, making it well suited for medium-power through-hole-replacement surface-mount designs.
Typical applications include phase-shift full-bridge telecom rectifiers, LLC resonant converters for server and datacom power, industrial SMPS, solar inverters, and EV onboard chargers where soft-switching efficiency is critical. The combination of low R<sub>DS(on)</sub>, low gate charge, and integrated fast body diode makes the IPD60R145CFD7 particularly attractive for high-frequency ZVS bridges and totem-pole PFC stages where body-diode recovery would otherwise cause shoot-through and EMI.
When designing with this MOSFET, ensure the gate-driver supply provides at least +10V V<sub>GS</sub> for full enhancement and that the gate resistor is sized to control dv/dt. For PCB layout, keep the source-tab copper pour as the primary heatsink path; the DPAK tab is electrically tied to the drain and must be floated or connected to the high-voltage rail with adequate creepage distance. This page synthesizes distributor pricing, drop-in CoolMOS CFD7 alternatives, and practical layout notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IPD60R145CFD7ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPD60R145CFD7ATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Drain-Source Voltage (VDS), Series, Mounting Type.
IPD60R145CFD7
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IPD60R380C6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD60R385CPATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD70R1K4P7SAUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD80R1K4P7ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD082N10N3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD60R145CFD7ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) |
| Hộp | TO-252AA (DPAK) surface mount |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) |
| Nhiệt độ hoạt động | -55C to +150C (junction) |
| Kiểu lắp đặt | Surface Mount (DPAK, 3-pin + tab) |
| Số chân | 3 (Gate, Drain, Source) |
| Series | CoolMOS CFD7 |
| Trạng thái RoHS | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching |
Cấu hình chân IPD60R145CFD7ATMA1
| Chân 1 | Gate — Gate drive input (10V typical, threshold ~3.5V) |
| Chân 2 | Drain — Drain (electrically connected to metal tab on back) |
| Chân 3 | Source — Source (low-side reference for gate drive) |
| Chân TAB | Drain — Metal back tab - electrically connected to Drain, used as primary thermal pad and high-voltage creepage surface |
Khu vực hoạt động an toàn (SOA) - TO-252AA (DPAK)
Ứng dụng tiêu biểu
IPD60R145CFD7ATMA1 phù hợp cho 6 Áp dụngs: LLC Resonant Converter (Server / Datacom), Phase-Shift Full-Bridge ZVS Converter (Telecom Rectifier), Totem-Pole PFC (Server / Industrial), Solar Inverter Boost Stage, Industrial SMPS Primary Switch, EV Onboard Charger / Auxiliary SMPS.
LLC Resonant Converter (Server / Datacom)
The IPD60R145CFD7ATMA1 is a primary-side switch choice for 1-3kW LLC resonant converters powering server and datacom rails. Its 600V V<sub>DS</sub> rating comfortably exceeds 400V PFC bulk rail levels, the 145 mOhm R<sub>DS(on)</sub> minimizes conduction loss at full load, and the integrated fast body diode handles ZVS commutation deadtime without shoot-through. Typical switching frequencies are 100-300 kHz.
Được đề xuất
Phase-Shift Full-Bridge ZVS Converter (Telecom Rectifier)
In phase-shift full-bridge (PSFB) telecom rectifier modules the IPD60R145CFD7ATMA1 delivers ZVS operation thanks to its low Q<sub>rr</sub> fast body diode and 145 mOhm R<sub>DS(on)</sub>. The CFD7 platform eliminates the need for an external anti-parallel Schottky and tolerates hard-commutated events on the lagging leg. 48V-output 2-3kW telecom rectifiers are the canonical application, with efficiencies above 96%.
Được đề xuất
Totem-Pole PFC (Server / Industrial)
The IPD60R145CFD7ATMA1 works on the slow (line-frequency-switching) leg of a CCM totem-pole PFC, where its 600V rating and fast body diode minimize reverse-recovery losses. The fast leg should still be implemented with a wide-bandgap device (GaN HEMT or SiC) for maximum efficiency above 65 kHz, but the CFD7 here provides rugged handling of near-hard-commutation events.
Được đề xuất
Solar Inverter Boost Stage
Solar string inverters use the IPD60R145CFD7ATMA1 as the boost switch in DC-DC stages stepping up 80-150V PV strings to a 400V bus, where its 600V V<sub>DS</sub> rating provides ample margin and the 16A continuous drain current handles 2-3 kW per phase. The CFD7 platform's low gate charge reduces drive losses, important for fan-less outdoor inverter designs.
Được đề xuất
Industrial SMPS Primary Switch
General-purpose 500W-2kW industrial SMPS designs use the IPD60R145CFD7ATMA1 as the primary-side switch in flyback, forward, and half-bridge topologies supplied from rectified 230V AC. The 600V V<sub>DS</sub> withstands the 380V DC bus with 1.5x safety margin, and DPAK's 83W power dissipation rating handles continuous operation without external heatsinking.
Được đề xuất
EV Onboard Charger / Auxiliary SMPS
Automotive 6.6-11kW onboard chargers and 12V auxiliary SMPS modules use the IPD60R145CFD7ATMA1 in PFC and LLC primary-side positions where the fast body diode supports ZVS commutation at the resonant tank. The 16A/600V rating fits 3.3kW-6.6kW single-stage chargers, and the CoolMOS CFD7 platform's reduced Q<sub>g</sub> lowers driver losses critical for thermally constrained under-hood designs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPD60R145CFD7ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPD60R145CFD7 | IPD60R380C6ATMA1 | IPD60R385CPATMA1 | IPD70R1K4P7SAUMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| V<sub>DS</sub> max | 600 V | 600 V | 600 V | 600 V | 700 V | 800 V |
| R<sub>DS(on)</sub> max | 145 mOhm | 145 mOhm | 380 mOhm | 385 mOhm | 1400 mOhm | 1400 mOhm |
| Technology | CoolMOS CFD7 (superjunction, fast body diode) | CoolMOS CFD7 - same | CoolMOS C6 | CoolMOS C3 (legacy) | CoolMOS P7 | CoolMOS P7 |
| Fast Body Diode | Yes (low Q<sub>rr</sub>) | Yes - same | Limited | No (legacy C3) | Limited (P7) | Limited (P7) |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Integrated fast body diode for ZVS/LLC (vsIPD60R385CPATMA1 (CoolMOS C3))
- Lower R<sub>DS(on)</sub> at 600V vs CoolMOS C6 (vsIPD60R380C6ATMA1 (CoolMOS C6))
- 600V exact match - not over-spec'd (vsIPD80R1K4P7ATMA1 (800V P7))
Ghi chú thiết kế
Estimated: at 600V/16A nominal and switching losses ~3W in a ZVS bridge, total dissipation is approximately 2.3W (P = I^2 x R = 16^2 x 0.145 - 100% duty would be 37W, but at 50% duty ~2.3W plus 3W switching). DPAK theta_JC is typically ~1.5C/W, so junction-to-case rise is ~3.5C. With theta_JA ~62C/W on 1oz 1sq-in copper pour, junction-to-ambient rise is ~143C above 25C, which exceeds 150C max junction. Use at least 4 sq-in copper pour or an external heatsink for sustained 16A operation.
Keep the high-current loop (drain tab - tab copper - source return - source pin) as small and tight as possible to minimize parasitic inductance. The DPAK tab is electrically connected to the drain and must NOT be soldered to the source-ground copper plane; route the drain tab copper to the high-voltage rail only. Provide at least 1mm creepage distance from the tab to any low-voltage trace. A 4-layer PCB with dedicated power and ground planes is strongly recommended above 2kW switching power.
Do not exceed V<sub>DS</sub>=600V - the avalanche rating is for transient clamping only, not continuous overvoltage. The gate-source voltage must remain within +/-20V; gate-source over-voltage is a common failure mode caused by gate-driver supply transients. Add a 10kOhm gate-source resistor to ensure the MOSFET is held off during driver power-up. Do not exceed 150C junction temperature; thermal runaway can occur in DPAK packages above this threshold.
Drive the gate with at least +10V V<sub>GS</sub> for full R<sub>DS(on)</sub> enhancement; +12V is recommended to minimize conduction loss. Use a dedicated gate-drive supply (isolated DC-DC or bootstrap) rather than pulling from V<sub>DD</sub> logic rails, which may not reach 10V under load. A gate resistor in the 10-47 Ohm range provides a good compromise between switching speed and dv/dt-induced ringing; reduce if ringing is well-controlled, increase if EMI is excessive.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - the IPD60R145CFD7ATMA1 is targeted at industrial SMPS, telecom, server/datacom, and solar inverter applications, not automotive. Halogen-free per Infineon policy.
