IRFS3306TRLPBF - 60V 160A N-Ch MOSFET, 4.2mΩ, D2PAK | Infineon
MPN: IRFS3306TRLPBF ✓ Hoạt độngIRFS3306TRLPBF Tóm tắt
A power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate to modulate conduction between the drain and source terminals. N-channel MOSFETs such as the IRFS3306TRLPBF are the workhorses of high-current switching because their low on-resistance minimizes I²R conduction loss while fast switching speeds reduce switching loss. Within the broader taxonomy, the IRFS3306TRLPBF sits as: power MOSFET -> N-channel enhancement-mode MOSFET -> discrete semiconductor -> power management component.
Key electrical specifications include a drain-source breakdown voltage (VDS) of 60 V, gate threshold voltage of typically 2.0 V to 4.0 V, total gate charge (Qg) of 85 nC, continuous drain current of 120 A at 25 °C case (160 A pulsed/PCB-limited per IR datasheet), and power dissipation of 230 W at Tc=25 °C. The D2PAK surface-mount footprint exposes the drain tab, enabling direct attachment to a PCB copper pad for thermal dissipation in lieu of a discrete heatsink.
The IRFS3306TRLPBF uses Infineon's HEXFET-style planar stripe cell architecture with an optimized body diode for hard-switched and high-frequency circuits. The combination of 4.2 mΩ RDS(on) at 10 V VGS, low Qg for reduced gate-drive loss, and avalanche-rated silicon gives designers headroom in 48 V telecom buses, 12 V/24 V automotive rails, and motor-drive half-bridges.
Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies (UPS), high-speed power switching, hard-switched high-frequency circuits, DC motor control, and battery protection circuits in 12 V/24 V systems. The D2PAK footprint is industry-standard and accepted by most PCB assembly lines.
Design consideration: at high continuous current the part relies on a generous drain-pad copper pour (>= 1 oz copper, >= 1 sq inch) to keep junction temperature below 150 °C - the on-resistance rises sharply with temperature, so thermal design dominates efficiency. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IRFS3306TRLPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFS3306TRLPBF (cùng hình factor và footprint) — khác nhau ở FET Type, Package, Technology, Operating Temperature Range, RDS(on) Max @ VGS=10V.
IRFS3306PBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →AUIRFS3306
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
NTP5860NL
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SUM110N06-3m9P
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFS3306TRR9PBF
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IRFS3306TRLPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) @ Tc=25°C | 120 A (Infineon datasheet; 160 A pulsed per IR datasheet family) |
| RDS(on) Max @ VGS=10V | 4.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical range) |
| Total Gate Charge (Qg) | 85 nC |
| Power Dissipation (PD) @ Tc=25°C | 230 W |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C (junction) |
| Hộp | D2PAK (TO-263), surface mount |
| Kiểu lắp đặt | Surface Mount |
| Technology | IR MOSFET™ (HEXFET-style planar stripe) |
| Lead-Free / Halogen-Free | Yes (PbF, Halogen-Free per Infineon datasheet) |
| Trạng thái RoHS | Compliant |
| Tape & Reel Packaging | 13-inch reel, 800 pcs/reel typical |
| Body Diode dV/dt Capability | Enhanced (per Infineon datasheet feature) |
Cấu hình chân IRFS3306TRLPBF
| Chân 1 | Gate — Gate control input; drive with 10 V for full enhancement |
| Chân 2 | Drain — Drain terminal; internally connected to the metal tab on D2PAK |
| Chân 3 | Source — Source terminal; return path for gate drive and load current |
Khu vực hoạt động an toàn (IRFS3306 family, per Infineon datasheet)
Ứng dụng tiêu biểu
IRFS3306TRLPBF phù hợp cho 6 Áp dụngs: Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS), High-Speed Power Switching, DC Motor Drive (12 V / 24 V), Battery Protection and Hot-Swap, Hard-Switched High-Frequency Circuits.
Synchronous Rectification in SMPS
The IRFS3306TRLPBF's 4.2 mΩ RDS(on) at VGS=10 V and 60 V VDS rating make it an ideal low-side synchronous rectifier in 12 V/24 V output switch-mode power supplies. Its enhanced body diode with high dV/dt capability prevents shoot-through in half-bridge topologies, while the D2PAK package dissipates heat directly into the PCB copper pour. In a typical 500 W SMPS design, two IRFS3306TRLPBF FETs replacing Schottky rectifiers can save 8-12 W of conduction loss at full load. The 85 nC Qg is compatible with standard synchronous-rectifier gate drivers.
Được đề xuất
Uninterruptible Power Supply (UPS)
The 60 V VDS rating and 160 A pulsed drain current make IRFS3306TRLPBF a strong candidate for the high-current battery-disconnect and inverter stages of a 24 V or 48 V UPS. The 230 W power dissipation rating and D2PAK thermal pad enable sustained high-current switching without active cooling in moderate-power systems. Designers typically parallel two IRFS3306TRLPBF devices to share current and halve conduction loss. The AEC-Q101 automotive sibling (AUIRFS3306) is preferred for UPS installed in vehicle environments with wider temperature swings.
Được đề xuất
High-Speed Power Switching
The IRFS3306TRLPBF's 85 nC total gate charge and low RDS(on) support high-frequency switching up to 200 kHz in hard-switched converter topologies. The enhanced body diode dV/dt capability prevents reverse-recovery-induced voltage spikes that would otherwise require snubbers. In a 48 V to 12 V buck converter running at 100 kHz, the IRFS3306TRLPBF delivers above 96% efficiency at 30 A load. Gate drive is straightforward with standard 10 V gate-drive ICs - no negative VGS required for reliable turn-off.
Được đề xuất
DC Motor Drive (12 V / 24 V)
The IRFS3306TRLPBF suits 12 V and 24 V brushed DC motor half-bridge and H-bridge drives where 60 V VDS gives ample transient headroom for inductive kick-back. Continuous 120 A at Tc=25 °C handles motor inrush currents that exceed steady-state ratings by 3-5x. The D2PAK surface-mount package simplifies assembly on robotic and industrial motor-control boards where through-hole parts are inconvenient. For brushed DC motors above 500 W, two IRFS3306TRLPBF in H-bridge configuration with proper flyback diodes are typical.
Được đề xuất
Battery Protection and Hot-Swap
In 24 V or 48 V battery packs, IRFS3306TRLPBF can serve as the hot-swap disconnect MOSFET, with its 4.2 mΩ RDS(on) minimizing steady-state loss. The 60 V VDS rating accommodates fully-charged 48 V lead-acid or Li-ion battery stacks with margin. The device's avalanche rating provides transient absorption when the hot-swap connector mates into a pre-charged bus. Designers typically drive the gate with a controlled rise-time circuit (RC + Zener clamp) to limit inrush during plug-in.
Được đề xuất
Hard-Switched High-Frequency Circuits
Hard-switched circuits such as ZVS/ZCS bridge converters and class-D amplifiers benefit from the IRFS3306TRLPBF's combination of low Qg (85 nC), low RDS(on) (4.2 mΩ), and enhanced body diode dV/dt. In a 1 kW class-D amplifier operating at 250 kHz, two IRFS3306TRLPBF per phase deliver above 95% efficiency while the D2PAK package simplifies the mechanical layout. The device's avalanche rating absorbs the small amount of energy lost to non-ideal soft-switching during transients.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFS3306TRLPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFS3306PBF | AUIRFS3306 | NTP5860NL | SUM110N06-3m9P |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Drain-to-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V |
Bảo phân biệt quan trọng
- Same silicon across packaging variants - true drop-in flexibility (vsIRFS3306PBF (tube) vs IRFS3306TRLPBF (13-inch reel))
- Automotive-qualified sibling in identical footprint (vsAUIRFS3306 vs IRFS3306TRLPBF)
- Lower RDS(on) than legacy IRF3205 in same D2PAK footprint (vsIRF3205)
Ghi chú thiết kế
Estimated: at ID=80 A continuous and RDS(on)=4.2 mΩ (assuming 1.5x worst-case temperature de-rating to ~6.3 mΩ at 100 °C junction), conduction loss per FET is roughly 40 W. The D2PAK package has theta_JC ~0.6 °C/W, so junction-to-case temperature rise is only 24 °C above case - but theta_JA on a JEDEC 1 sq inch 1 oz copper pad is ~40 °C/W, producing ~1600 °C rise from 40 W ambient-mounted dissipation. Designers must use larger copper pours (>= 2 sq inch), forced airflow, or a clip-on heatsink to keep Tj below 150 °C.
The D2PAK drain tab is the primary thermal path. Solder the tab to a PCB copper pour covering at least 1 sq inch on top layer plus 2 oz copper (or thermal vias to an internal plane) to achieve the rated 230 W power dissipation. Use multiple thermal vias (>= 9 vias, 0.3 mm drill, 1 mm pitch) under the tab to spread heat to internal copper planes. Keep source copper minimal near the gate trace to avoid gate-bounce from high di/dt source inductance.
Do not exceed VDS=60 V even for transient spikes - inductive loads can ring above the supply rail at turn-off, so always include a snubber or TVS clamp sized to clamp below 48 V (20% margin). The 85 nC Qg requires a gate-driver capable of sourcing/sinking >= 1 A peak to switch the FET in <50 ns - standard logic-level GPIO cannot drive this FET directly. Use a dedicated gate-driver IC such as IRS2003 or IR2104 for half-bridge topologies.
Keep the gate-drive loop (gate-driver output -> FET gate -> FET source -> gate-driver ground) physically small (under 1 cm²) to minimize parasitic inductance that causes gate ringing and possible dv/dt-induced turn-on. Place a 10 Ω to 47 Ω gate-source resistor close to the FET pins to dampen resonance. For half-bridge topologies, use a bootstrap supply (e.g., IRS2003) or charge pump for the high-side gate drive.
Thông tin tuân thủ
PbF (lead-free) finish and Halogen-Free per Infineon datasheet. RoHS compliant. The automotive variant AUIRFS3306 carries AEC-Q101 qualification; the standard IRFS3306TRLPBF is not AEC-Q qualified - use AUIRFS3306 for vehicle applications.
