IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon
MPN: IRLR9343TRPBF ✓ Hoạt độngIRLR9343TRPBF Tóm tắt
A P-channel MOSFET is a type of field-effect transistor in which the conducting channel is formed by inverting the surface of an N-type semiconductor with a negative gate-source voltage. Unlike N-channel MOSFETs that require the load to be tied to ground, P-channel MOSFETs are typically placed on the high-side of a load and switched by pulling the gate toward ground. This high-side placement eliminates the need for a charge pump or bootstrap circuit in low-voltage systems, simplifying gate drive architecture.
Key specifications include a -55 V drain-source breakdown (withstand margin above 40 V automotive rails), 105 mOhm max RDS(on) at VGS = -10 V (reducing conduction losses in class-D output stages), and a threshold voltage suitable for direct logic-level (-5 V) gate drive from typical microcontroller or analog PWM controllers. The TO-252 surface-mount package supports automated assembly while still providing a metal tab for thermal dissipation.
The device uses Infineon's IR MOSFET silicon technology, a planar HEXFET process that has been refined over decades for power-conversion robustness. The 105 mOhm on-resistance combined with the modest gate charge yields a low FOM (figure-of-merit), enabling high-frequency PWM operation without excessive driver losses. Avalanche-rated, the device tolerates unclamped inductive switching events common in motor and audio applications.
Typical applications include class-D audio amplifier output stages, automotive load and motor switching (seat modules, window lifts, mirror adjusters), DC-DC converter high-side switches, battery protection and reverse-polarity OR-ing circuits, and power-OR/redundant-rail management in telecom and computing systems.
When designing with this device, gate drive impedance matters more than peak gate voltage. A 10-100 ohm gate resistor dampens ringing caused by the package's lead inductance and the MOSFET's input capacitance; too low a value risks EMI, too high slows switching and increases switching loss.
This page synthesizes distributor pricing, drop-in cross-brand alternatives, and practical class-D design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IRLR9343TRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRLR9343TRPBF (cùng hình factor và footprint) — khác nhau ở Package, Technology, Total Gate Charge (Qg), FET Type, Lead-Free.
IRLR9343PBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR5505TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →VBE2610N
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRLR9343TRPBF Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLR9343TRPBF |
| FET Type | P-Channel MOSFET |
| Technology | IR HEXFET |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -20 A |
| On-Resistance RDS(on) max at VGS=-10V | 105 mOhm |
| Total Gate Charge (Qg) | 31 nC (typical) |
| Power Dissipation (PD) at Tc=25C | 79 W |
| Hộp | PG-TO252-3 (DPAK) Surface Mount |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
| Cấp MSL | 1 |
| Optimized Application | Class-D audio amplifier output stages |
| Polarity | P-Channel |
Cấu hình chân IRLR9343TRPBF
| Chân 1 | Gate — Gate control input; pull toward ground (0 V) with respect to Source to turn the P-channel MOSFET on |
| Chân 2 | Drain — Drain terminal; electrically and thermally bonded to the metal tab on the back of the DPAK package |
| Chân 3 | Source — Source terminal; reference point for gate drive; typically tied to the positive supply rail in high-side switching |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IRLR9343TRPBF phù hợp cho 6 Áp dụngs: Class-D Audio Amplifier Output Stage, Automotive Load Switching (High-Side), DC-DC Converter High-Side Switch, Battery Protection & Reverse-Polarity OR-ing, Motor Driver H-Bridge (Low-Voltage), Power Multiplexing in Computing/Server.
Class-D Audio Amplifier Output Stage
The IRLR9343TRPBF is specifically optimized by Infineon for class-D audio amplifier output stages, where its 105 mOhm max RDS(on) and 31 nC total gate charge deliver the low conduction and switching losses required for >90% efficiency at full audio bandwidth. In a half-bridge output stage, the P-channel device sits on the high-side, eliminating the bootstrap supply required by N-channel topologies and simplifying the PWM modulator design. The -55 V VDS rating provides ample margin above the +/- 30 V typical audio bus rails. Place the device with the metal tab soldered to at least 0.5 sq-in of 2 oz copper to keep Tj within the 125C audio-grade limit.
Được đề xuất
Automotive Load Switching (High-Side)
Use the IRLR9343TRPBF as a high-side switch for 12 V automotive loads such as seat heaters, mirror adjusters, and lamp drivers where the P-channel device simplifies gate drive (pull to GND to turn on). The -55 V VDS rating tolerates 40 V load-dump transients per ISO 7637-2 when paired with a 30 V TVS clamp. However, this is a commercial-grade part - not AEC-Q101 qualified - so it suits non-safety automotive accessories and aftermarket modules rather than ECU-controlled safety loads. The 20 A ID rating covers most accessory current demands; for >20 A loads parallel two devices with 10 ohm gate resistors.
Được đề xuất
DC-DC Converter High-Side Switch
The IRLR9343TRPBF works as the high-side P-channel switch in non-isolated buck and buck-boost converters up to 30 V input, where its low RDS(on) minimizes conduction loss and its 31 nC gate charge keeps driver losses manageable at 200-500 kHz switching frequencies. In a buck converter, the P-channel device replaces an N-channel + bootstrap, saving two components and reducing the controller's BOM cost. For 24 V industrial bus inputs, the -55 V VDS provides 130% derating margin. Add a 10-100 ohm gate resistor and a small PNP pull-up on the gate to ensure clean turn-off in noisy industrial environments.
Được đề xuất
Battery Protection & Reverse-Polarity OR-ing
Place the IRLR9343TRPBF as a reverse-polarity protection P-channel MOSFET between a battery and its load - the device's body diode conducts during normal operation, and turning on the MOSFET (by shorting gate to source via a Zener-resistor network) eliminates the diode drop and reduces power dissipation by 80%+. In redundant-rail OR-ing circuits, two IRLR9343TRPBF devices in back-to-back configuration share load current with minimal voltage drop. The 105 mOhm RDS(on) translates to only 2.1 W dissipation at 20 A - well within the 79 W rating when properly heatsunk.
Được đề xuất
Motor Driver H-Bridge (Low-Voltage)
Build a low-voltage brushed DC motor H-bridge with the IRLR9343TRPBF as both high-side and low-side switches - the P-channel high-sides eliminate the need for a bootstrap circuit on each half-bridge, dramatically simplifying the gate driver. At 12-24 V brush motor voltages with peak currents up to 20 A, the IRLR9343TRPBF delivers excellent PWM control up to 50 kHz. The 79 W power dissipation rating allows sustained operation without additional heatsinking in small motors (<100 W mechanical output). Add a flyback diode across each motor terminal for inductive kick protection beyond the MOSFET's internal avalanche rating.
Được đề xuất
Power Multiplexing in Computing/Server
The IRLR9343TRPBF enables power-source multiplexing in server, networking, and storage systems where redundant supplies must be OR'd together. The P-channel device sits between each supply and the load bus, and a controller turns on the appropriate MOSFET based on which supply is healthy. The 105 mOhm RDS(on) at 20 A yields a 2.1 V drop and 42 W dissipation at full load - acceptable for a 12 V bus but warrants thermal verification. The DPAK package's metal tab can dissipate this power with proper copper layout, eliminating the need for an external heatsink in space-constrained 1U server form factors.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRLR9343TRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRLR9343PBF | IRFR5505TRPBF | VBE2610N |
|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | VBsemi (cross-brand) |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | TO-252 (DPAK) - same footprint |
| Drain-Source Voltage (VDS) | -55 V | -55 V | -55 V | -60 V (+9% margin) |
| Continuous Drain Current (ID) at Tc=25C | -20 A | -20 A | -20 A | -30 A (+50% margin) |
| On-Resistance RDS(on) max at VGS=-10V | 105 mOhm | 105 mOhm | 110 mOhm (older generation) | 61 mOhm (-42% lower loss) |
| Optimized Application | Class-D audio amplifier | Class-D audio amplifier (same) | General purpose P-channel | General purpose P-channel |
Bảo phân biệt quan trọng
- Class-D audio-optimized switching characteristics (vsIRFR5505TRPBF)
- Better on-resistance than same-brand drop-in (vsIRFR5505TRPBF)
- Same-brand family compatibility (vsVBE2610N (VBsemi))
Ghi chú thiết kế
Estimated: At 10 A continuous drain current and RDS(on) = 105 mOhm at VGS=-10V, conduction loss is P_D = I^2 x R = 100 x 0.105 = 10.5 W. The PG-TO252 (DPAK) package has theta_JC of approximately 1.6 C/W, giving a junction temperature rise above the case of 17 C - within safe limits if the case is held at 100 C. The case-to-ambient thermal resistance is ~50 C/W on 1 sq-in of 2 oz copper, which means the junction will rise 525 C above ambient at 10.5 W - clearly unacceptable. Solder the metal tab to AT LEAST 1 square inch of 2 oz copper (preferably 2 sq-in or more) to keep Tj within the 150 C silicon limit at continuous full load.
For the P-channel IRLR9343TRPBF, place a 10-100 ohm resistor between the gate driver output and the gate pin to damp the LC resonance formed by the gate-driver trace inductance and the MOSFET's Ciss (~1.5 nF). At 31 nC total gate charge, peak gate-drive current during turn-on is approximately Qg/t_rise - at a 30 ns rise time this is ~1 A, which is well within typical PWM controller capability. Always include a pull-down resistor (10-100 kOhm) from gate to source to ensure the MOSFET stays off when the controller is unpowered or in reset.
Critical pitfalls when using the IRLR9343TRPBF: (1) Forgetting that this is a P-channel device - the gate must be PULLED LOW relative to source to turn on, not driven high as with N-channel; (2) Driving the gate above the absolute maximum VGS rating (typically +/- 20 V) destroys the oxide - never apply a positive gate-source voltage; (3) Assuming the drain tab is isolated - on the DPAK package, the metal tab is electrically connected to pin 2 (drain), so the PCB copper pour MUST be at drain potential; (4) Overlooking avalanche energy - while the device is avalanche-rated, sustained unclamped inductive switching beyond the datasheet E_AS value will destroy the die.
Thông tin tuân thủ
RoHS compliant per Infineon product page and DigiKey listing. Lead-free (PBF suffix indicates Pb-free terminal finish). Not AEC-Q101 qualified - commercial-grade part, not intended for automotive safety-critical applications. REACH compliance per EU distributor documentation.
