ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
MPN: ISC016N08NM8SCATMA1 ✓ Hoạt độngISC016N08NM8SCATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to commutate high currents with low on-resistance. The OptiMOS 8 family sits inside the broader N-channel MOSFET hypernymy: power MOSFET -> MOSFET -> discrete semiconductor -> power management. Within Infineon's lineup, OptiMOS 8 represents the newest generation optimized for 40-200V systems, with successive generations trading on-resistance for switching speed using advanced trench-gate process technology. OptiMOS 8 specifically targets telecom, server, and OR-ing applications where every milliohm of RDS(on) translates into watt-level loss reduction.
Key features of the ISC016N08NM8SCATMA1 include the 80V drain-source breakdown voltage, very low typical RDS(on) in the sub-1.6 mΩ range for the SuperSO8 DSC footprint, the dual-side cooling PG-WSON-8-2 package that exposes the die on both top and bottom for maximum thermal transfer, and 100% Rg and UIS (unclamped inductive switching) tested production lots. The SuperSO8 DSC package preserves the industry-standard 5x6 mm SuperSO8 footprint, enabling drop-in PCB migration from previous generations.
Architecturally, OptiMOS 8 uses a refined shield-gate trench structure to lower RDS(on)·Qg figure of merit. Compared with OptiMOS 5 and OptiMOS 6, OptiMOS 8 typically reduces output capacitance (Coss) and gate charge (Qg) by 30-50%, enabling faster switching edges and lower driver loss in 48V bus converters, synchronous rectification, and hot-swap controllers.
Typical applications include 48V telecom bus converters, server VR stages and OR-ing FETs in redundant power supplies, hot-swap and eFuse circuits in data-center backplanes, industrial SMPS synchronous rectification stages, and high-current motor drive half-bridges. Choose this part when an 80V breakdown and very low RDS(on) in the SuperSO8 DSC land pattern are required.
Design consideration: the dual-side cooling package requires copper pours on both top and bottom PCB layers at the drain tab. Omitting the top-side thermal pad increases junction-to-ambient thermal resistance by approximately 2x and may force derating below 29A continuous current.
This page synthesizes distributor pricing, drop-in OptiMOS 8 family alternatives, and PCB layout guidance not found in the manufacturer datasheet - providing engineers a faster path from selection to qualified source.
Bộ thay thế dễ dàng lắp đặt cho ISC016N08NM8SCATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC016N08NM8SCATMA1 (cùng hình factor và footprint) — khác nhau ở Operating Temperature Range, Package, Technology, MSL Level, Product Family.
ISC016N08NM8SC
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
ISC019N10NM8SC
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
ISZ028N03LF2SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN08S7L033ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE036N08NM6CGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN10S5L280DATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC016N08NM8SCATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 8 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current at TA=25°C (ID) | 29 A |
| Continuous Drain Current at TC=25°C (ID) | 269 A |
| Power Dissipation at TC=25°C (PD) | 263 W |
| Hộp | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) |
| Khoảng nhiệt độ hoạt động | -55C to +175C |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) |
Cấu hình chân ISC016N08NM8SCATMA1
| Chân 1 | Source — Power source connection (pin 1 of SuperSO8 DSC) |
| Chân 2 | Source — Power source connection |
| Chân 3 | Source — Power source connection |
| Chân 4 | Gate — Gate drive input (single gate pin on SuperSO8 DSC) |
| Chân 5 | Drain — Power drain connection |
| Chân 6 | Drain — Power drain connection |
| Chân 7 | Drain — Power drain connection |
| Chân 8 | Drain — Power drain connection |
ISC016N08NM8SCATMA1 Khu vực hoạt động an toàn (DC, TC=25°C)
Ứng dụng tiêu biểu
ISC016N08NM8SCATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom Bus Converter, Server OR-ing and Redundant Power, Hot-Swap and eFuse in Data-Center Backplanes, Industrial SMPS Synchronous Rectification, High-Current Motor Drive Half-Bridge, Automotive 48V Mild-Hybrid Bus.
48V Telecom Bus Converter
The ISC016N08NM8SCATMA1 fits 48V telecom bus converter designs where its 80V VDS provides 60% voltage headroom over the nominal 48V rail and its very low RDS(on) directly cuts conduction loss in synchronous rectification stages. Placed as the low-side FET on the secondary side of a 48V-to-PoL isolated converter, the OptiMOS 8 shield-gate trench process cuts Coss by 30-50% versus OptiMOS 5, enabling sub-100 ns switching edges with reduced driver loss. The 29A continuous rating at TA=25°C covers most 600W-1.2kW module power levels, while the dual-side cooling SuperSO8 DSC package halves thermal resistance versus single-side cooling alternatives. Designers should keep VIN transients within the SOA curve and provide top-side copper thermal vias at the drain tab to fully exploit the dual-side cooling benefit.
Được đề xuất
Server OR-ing and Redundant Power
The ISC016N08NM8SCATMA1 suits server OR-ing and redundant power supply designs where its 80V breakdown covers 48V rails and its very low RDS(on) minimizes voltage drop and heat in the OR-ing path. In a redundant -48V distribution, two ISC016N08NM8SCATMA1 MOSFETs in back-to-back configuration carry the full load current with milliohm-level drop that is well below the 1V OR-ing FET budget. The 29A continuous rating supports 1.4kW per rail; paralleling two ISC016N08NM8SCATMA1 devices extends to 2.8kW per rail with active current sharing. The dual-side cooling package is essential in 1U server chassis where airflow is constrained, allowing sustained 269A pulsed operation during hot-swap events. Verify hot-swap inrush control with SOA curves from the manufacturer datasheet.
Được đề xuất
Hot-Swap and eFuse in Data-Center Backplanes
The ISC016N08NM8SCATMA1 is well-matched to 48V hot-swap and eFuse circuits on data-center backplanes, where its 80V VDS absorbs the full -48V input plus transient ringing and its 269A pulsed rating handles the inrush into bulk capacitors. The OptiMOS 8 low-Coss characteristic reduces switching loss during active current-limit foldback events, while the SuperSO8 DSC package sustains the repetitive peak current without thermal runaway. In a typical design, the ISC016N08NM8SCATMA1 sits between the backplane feed and downstream POL converters with a hot-swap controller providing fault timing. Use the SOA curve to validate dV/dt and di/dt envelopes; keep top-side thermal copper to ensure the dual-side cooling benefit is preserved.
Được đề xuất
Industrial SMPS Synchronous Rectification
The ISC016N08NM8SCATMA1 excels as a synchronous rectifier on the secondary side of 24V/48V industrial SMPS converters, where its very low RDS(on) and 80V breakdown comfortably derate under the 60V worst-case rectified secondary voltage. Replacing a Schottky diode with the ISC016N08NM8SCATMA1 typically cuts secondary rectification loss by 50-70%, and the OptiMOS 8 shield-gate trench minimizes body-diode reverse-recovery charge to limit voltage spikes across the transformer secondary. The 263W TC power dissipation supports continuous output power above 1.5kW when mounted on a 40mm x 40mm copper PCB footprint. Drive the FET with a tight, propagation-matched gate driver such as the 2EDN7434RXTMA1 to fully exploit the fast switching capability.
Được đề xuất
High-Current Motor Drive Half-Bridge
The ISC016N08NM8SCATMA1 fits 48V-class high-current BLDC and servo motor drive half-bridges where its 80V breakdown covers the DC bus with margin and its 29A continuous / 269A pulsed current ratings accommodate the peak load profile. The dual-side cooling SuperSO8 DSC package is critical in sealed motor-drive enclosures where top-side heatsinking is unavailable; the bottom thermal pad must still connect through an array of thermal vias. The OptiMOS 8 low-Qg characteristic reduces driver loss at 50-100kHz PWM, allowing higher fundamental switching frequency and lower acoustic noise. Validate that the ISC016N08NM8SCATMA1 body-diode reverse recovery stays within the half-bridge dead-time window to prevent shoot-through.
Được đề xuất
Automotive 48V Mild-Hybrid Bus
The ISC016N08NM8SCATMA1 is a candidate for 48V mild-hybrid bus switching where its 80V breakdown covers the 48V nominal plus load-dump transient and its SuperSO8 DSC footprint enables compact PCB layout. Note that AEC-Q101 automotive qualification is not explicitly listed in the verified data for this exact MPN - for production automotive programs, verify the latest Infineon automotive-grade OptiMOS 8 part number with the Infineon automotive product team before committing to this specific MPN. The 29A continuous rating covers most 48V eFan and auxiliary load-switching applications.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC016N08NM8SCATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISC016N08NM8SC | ISC019N10NM8SC | ISZ028N03LF2SATMA1 | IAUCN08S7L033ATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WSON-8-2 (SuperSO8 DSC) | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 100 V | 30 V | 80 V | 80 V |
| Process Generation | OptiMOS 8 | OptiMOS 8 | OptiMOS 8 | OptiMOS (lower voltage class) | OptiMOS-class | OptiMOS 6 (prior generation) |
| Cooling Configuration | Dual-side (DSC) | Dual-side (DSC) | Dual-side (DSC) | Dual-side (DSC) | Dual-side (DSC) | Dual-side (DSC) |
Bảo phân biệt quan trọng
- Latest OptiMOS 8 generation, lowest RDS(on) in SuperSO8 DSC footprint (vsIQE036N08NM6CGATMA1)
- Dual-side cooling enables ~2x thermal performance vs single-side cooling SuperSO8 (vsISC016N08NM8 (standard SuperSO8 single-side cooling))
- 80V breakdown optimized for 48V telecom / server rails (vsISZ028N03LF2SATMA1)
Ghi chú thiết kế
The PG-WSON-8-2 SuperSO8 DSC dual-side cooling package exposes the drain tab on both top and bottom for thermal transfer. Omitting the top-side copper thermal pad typically doubles junction-to-ambient thermal resistance versus the datasheet figure, which can force derating well below 29A continuous current. Use thermal vias (0.3 mm drill, 0.5-1.0 mm pitch) under the bottom pad to a 2 oz copper inner plane and place a copper land of at least 1 cm x 1 cm on the top layer above the package. Estimated: at 5W dissipation in still air with top-side thermal copper, expect theta_JA near 35-45 C/W; without top-side copper, theta_JA may exceed 80 C/W.
Place the gate drive loop as physically tight as possible: keep the gate driver within 5 mm of the Gate pin, use a Kelvin-source connection if the package exposes one, and route the gate trace away from the drain switching node. The SuperSO8 DSC pins 1-3 are Source and pins 5-8 are Drain; route the high-side switch-node copper on the inner layer so it does not capacitively couple into the gate trace. A 10-ohm gate resistor in series with the driver output dampens ringing on the parasitic gate-drain capacitance.
Three pitfalls recur in ISC016N08NM8SCATMA1 designs: (1) assuming the SuperSO8 DSC pinout matches a standard SO-8 (the pin numbering is 1-3 Source, 4 Gate, 5-8 Drain rather than the SO-8 standard SO/GND/D/D arrangement), (2) forgetting that the body diode carries the dead-time current in half-bridges and reverse-recovery behavior matters, (3) overlooking that the OptiMOS 8 gate threshold can be lower than older generations, requiring tighter VGS margin to avoid unintended turn-on during transients. Validate by reading the latest Infineon datasheet rather than relying on memory of OptiMOS 5/6 thresholds.
Estimated: at nominal 48V input and 100 kHz switching, a typical 600W synchronous rectifier stage using the ISC016N08NM8SCATMA1 dissipates 6-8W conduction loss plus 1-2W switching loss. Use a 4-layer PCB with 2 oz copper on outer layers to keep total thermal resistance within budget; without a heatsink, the dual-side cooling package supports 6-8W continuous dissipation at 70°C ambient. If the load profile exceeds 10W continuous, attach a small clip-on heatsink to the top copper pour.
Thông tin tuân thủ
RoHS and REACH compliance per Infineon product page. AEC-Q101 automotive qualification status not explicitly stated in verified data for this exact MPN - verify with Infineon automotive team before deploying in production automotive programs.
