1ED020I12B2XUMA1 vs 1ED020I12FA2XUMA2 比較

詳細並排比較 1ED020I12B2XUMA1 由 Infineon 與 1ED020I12FA2XUMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED020I12FA2XUMA2 1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 ✓ 啟用中

規格比較

參數 1ED020I12B2XUMA1 1ED020I12FA2XUMA2
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Single-channel IGBT gate driver, galvanically isolated IGBT / SiC / GaN compatible
Isolation Technology Coreless transformer (magnetic coupling) Coreless transformer (CT)
Isolation Voltage (Vrms) 4500 Vrms 4500 Vrms
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns —
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
封裝 PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-20
Creepage Distance 8 mm —
工作溫度 -40 °C to +125 °C —
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL-3 (per JEDEC J-STD-020) —
Compliance RoHS compliant —
功能 — Galvanically isolated single-channel IGBT gate driver
Output Current (Source/Sink) — 2 A (rail-to-rail)
Configuration — Single low-side / high-side driver
工作溫度範圍 — -40 C to +125 C
Automotive Qualification — AEC-Q100 qualified
Common-Mode Transient Immunity (CMTI) — [DATA_NEEDED: CMTI value]
Propagation Delay (typ) — [DATA_NEEDED: tpd value]
UVLO Primary Side — [DATA_NEEDED: VUVLO_VCC1]
UVLO Secondary Side — [DATA_NEEDED: VUVLO_VCC2]
Propagation Delay Matching — [DATA_NEEDED: matching value]
RoHS 狀態 — Compliant
Insulation Type — Basic insulation per DIN EN 60747-5-2

資料表與資源

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