1ED020I12B2XUMA1 vs 1ED3127MU12FXUMA1 比較

詳細並排比較 1ED020I12B2XUMA1 由 Infineon 與 1ED3127MU12FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3127MU12FXUMA1 1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 ✓ 啟用中

規格比較

參數 1ED020I12B2XUMA1 1ED3127MU12FXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Single-channel IGBT gate driver, galvanically isolated —
Isolation Technology Coreless transformer (magnetic coupling) —
Isolation Voltage (Vrms) 4500 Vrms —
Number of Channels 1 —
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns 15 ns
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
封裝 PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8-72 (SOIC-8 wide-body)
Creepage Distance 8 mm —
工作溫度 -40 °C to +125 °C —
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL-3 (per JEDEC J-STD-020) —
Compliance RoHS compliant —
功能 — Single-channel isolated gate driver
輸出數量 — 1
輸出配置 — High-side / Low-side, Inverting / Non-Inverting
Peak Output Current — 10 A (source/sink)
Continuous Output Current — 9 A
Supply Voltage (VCC2 secondary) — 12 V to 35 V
Supply Voltage (VCC1 primary) — 3 V to 5.5 V
Delay Matching (typ.) — 30 ns
Galvanic Isolation — 3000 Vrms (coreless transformer)
工作溫度範圍 — -40C to +125C
Protection Features — Miller clamp, UVLO, DESAT short-circuit protection
RoHS 狀態 — Compliant
Drives — IGBT, MOSFET, SiC MOSFET

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