1ED020I12B2XUMA1 vs 1ED3142MU12FXUMA1 比較

詳細並排比較 1ED020I12B2XUMA1 由 Infineon 與 1ED3142MU12FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1ED020I12B2XUMA1 1ED3142MU12FXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Single-channel IGBT gate driver, galvanically isolated —
Isolation Technology Coreless transformer (magnetic coupling) Coreless Transformer (CT)
Isolation Voltage (Vrms) 4500 Vrms —
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns —
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
封裝 PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8-72 (wide-body DSO-8)
Creepage Distance 8 mm —
工作溫度 -40 °C to +125 °C —
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL-3 (per JEDEC J-STD-020) —
Compliance RoHS compliant —
Product Type — Galvanically Isolated Gate Driver IC
Peak Source/Sink Output Current — 6.5 A (typical)
Isolation Voltage (DigiKey rating) — 3000 Vrms
Isolation Voltage (Manufacturer datasheet) — 2300 V
Output Supply Voltage (VCC2-VEE2) — [DATA_NEEDED: max value, typical datasheet 25 V max]
Input Supply Voltage (VCC1) — [DATA_NEEDED: value]
Propagation Delay (typical) — 42 ns
Target Power Switches — SiC MOSFETs, IGBTs, MOSFETs
工作溫度範圍 — [DATA_NEEDED: junction/ambient range]
Protection Features — UVLO (output-side), DESAT short-circuit detection
Output Stage — Separate source/sink pins, totem-pole
RoHS 狀態 — Compliant
Family — Infineon EiceDRIVER 1ED31xx

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