1ED3122MC12HXUMA1 vs 1ED020I12B2XUMA1 比較

詳細並排比較 1ED3122MC12HXUMA1 由 Infineon 與 1ED020I12B2XUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3122MC12HXUMA1 1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 ✓ 啟用中

規格比較

參數 1ED3122MC12HXUMA1 1ED020I12B2XUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Isolated Gate Driver (single-channel) —
Isolation Technology Coreless Transformer (CT) Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) 5.7 kVrms 4500 Vrms
Maximum Transient Isolation (Vpk) 8 kVpk —
Output Current (source / sink) 10 A / 9 A —
Configuration High-side, non-inverting —
Number of Channels 1 1
Supply Voltage (VCC / VBS) 8 V to 35 V —
Propagation Delay (typ.) 30 ns 35 ns
Rise Time / Fall Time (typ.) 15 ns / 30 ns —
Miller Clamp Active (integrated) Yes (integrated 2 A clamp FET)
Short-Circuit Clamping Yes —
UVLO Primary and secondary side —
工作溫度 -40 C to +125 C -40 °C to +125 °C
封裝 PG-DSO-8-66 (300-mil DSO-8) PG-DSO-16-15 (300 mil wide-body DSO-16)
安裝類型 Surface Mount Surface Mount
MSL 等級 2 MSL-3 (per JEDEC J-STD-020)
RoHS 狀態 Compliant —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
Compliance — RoHS compliant

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