1ED3323MC12NXUMA1 vs 1ED3124MU12HXUMA1 比較

詳細並排比較 1ED3323MC12NXUMA1 由 Infineon 與 1ED3124MU12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3323MC12NXUMA1 1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon

1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon

1ED3323MC12NXUMA1 ✓ 啟用中

規格比較

參數 1ED3323MC12NXUMA1 1ED3124MU12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel isolated gate driver —
Isolation Voltage (Vrms) 5.7 kVrms —
Peak Source Current 8.5 A —
Peak Sink Current 9 A —
Number of Channels 1 —
Primary-Side Supply Voltage (VDD1) 3.1 V to 5.5 V —
Secondary-Side Supply Voltage (VCC2) 9 V to 18 V —
Propagation Delay (typ) 85 ns —
Common-Mode Transient Immunity (CMTI) [DATA_NEEDED: CMTI in kV/us] 200 kV/us minimum
Protection Features DESAT short-circuit, soft-off, Miller clamp, UVLO —
工作溫度範圍 -40 C to +125 C -40C to +125C
封裝 PG-DSO-16-40 PG-DSO-8-66 (DSO-8 wide-body)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] MSL2 (per JEDEC J-STD-020)
RoHS 狀態 Compliant Compliant
Family EiceDRIVER F3 Enhanced (1ED332x) —
Isolation Technology Coreless Transformer (CT) Coreless transformer (CT)
Product Type — Single-channel isolated gate driver IC
Manufacturer Family — EiceDRIVER Compact 1ED31xxMU12H (X3 compact)
Peak Output Current (source/sink) — 14 A typical
輸出配置 — Separate source and sink pins
Galvanic Isolation (rms) — 5.7 kV (UL 1577)
Working Voltage (continuous) — 1200 V
Propagation Delay (typ.) — 90 ns
UVLO Threshold — 10.5 V
Creepage Distance — >8 mm
Target Switch Types — IGBT, power MOSFET, SiC MOSFET
Recommended Switch Class — Up to 2300 V IGBT / SiC modules

資料表與資源

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