1EDN7126GXTMA1 vs 1EDN7550BXTSA1 比較

詳細並排比較 1EDN7126GXTMA1 由 Infineon 與 1EDN7550BXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1EDN7126GXTMA1 1EDN7550BXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 4 A
Peak Sink Current 1.5 A 8 A
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) Non-inverting, truly differential
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
工作溫度範圍 -40C to +125C —
封裝 PG-VSON-10-4 PG-SOT23-6 (SOT-23-6)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS 狀態 Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Driver Configuration — Single-channel, high-side / low-side
Supply Voltage (VDD max) — 84 V
Minimum Input Pulse Width — 29 ns
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay value]
Input Common-Mode Range — Up to 150 V
Channel-to-Channel Matching — 1.0 ns typ.
Internal Regulator — 4.7 V on input side
Logic Input Compatibility — TTL / CMOS
Under-Voltage Lockout (UVLO) — Yes
工作接面溫度 — -40 °C to +150 °C

資料表與資源

瀏覽所有產品 建立 BOM 索取報價