27C512-25 vs 27C512-10 比較

詳細並排比較 27C512-25 由 Microchip Technology 與 27C512-10 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Microchip Technology
27C512-25 27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 Obsolete

規格比較

參數 27C512-25 27C512-10
品牌 Microchip Technology Texas Instruments
類別 Memory ICs Memory ICs
生命週期狀態 Obsolete 停產終止
Memory Organization 64K x 8 (524,288 bits) —
記憶體類型 CMOS EPROM (UV / OTP) OTP EPROM (CMOS)
Maximum Access Time 250 ns —
Supply Voltage (Read Mode) 5 V +/- 10% —
Standby Current (CMOS) 20 uA typical —
Operating Mode Asynchronous Totally static operation
輸出類型 3-state, common I/O —
Pinout Standard JEDEC-approved 28-pin JEDEC-approved 28-pin EPROM pinout
封裝 DIP-28 28-pin DIP
安裝類型 Through Hole Through Hole
Programming Method High-voltage EPROM programming (Flashrite type) —
Erase Method UV (windowed variant) or not erasable (OTP variant) One-Time Programmable (not erasable)
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Access Time Guarantee Any byte in less than 250 ns —
Technology CMOS floating gate —
RoHS 狀態 [DATA_NEEDED: RoHS status] unknown
記憶體容量 — 512 Kbit
組織 — 64K x 8
Access Time (Speed Grade -10) — 100 ns
Supply Voltage (VCC) — +5 V with +/-10% tolerance
Programming Voltage (VPP) — +12.5 V
Standby Current — 20 uA typical (CMOS standby)
介面 — Parallel, TTL compatible
Address Lines — 15 (A0-A14)
Data Lines — 8 (Q0-Q7), tri-state outputs
Control Signals — /E (chip enable), /G (output enable)

資料表與資源

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