2ED2108S06FXUMA1 vs 1EDN7550BXTSA1 比較

詳細並排比較 2ED2108S06FXUMA1 由 Infineon 與 1EDN7550BXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2108S06FXUMA1 2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 ✓ 啟用中

規格比較

參數 2ED2108S06FXUMA1 1EDN7550BXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge Single-channel, high-side / low-side
Number of Drivers 1 —
Gate Type N-Channel MOSFET, IGBT —
輸出數量 2 (high-side + low-side) —
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes —
Undervoltage Lockout (UVLO) Yes (VCC and VB) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] [DATA_NEEDED: propagation delay value]
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
工作溫度 -40 C to +125 C —
封裝 PG-DSO-8-53 (DSO-8) PG-SOT23-6 (SOT-23-6)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 [DATA_NEEDED: MSL level]
RoHS 狀態 Compliant Compliant
Input Type — Non-inverting, truly differential
Peak Source Current — 4 A
Peak Sink Current — 8 A
Supply Voltage (VDD max) — 84 V
Minimum Input Pulse Width — 29 ns
Input Common-Mode Range — Up to 150 V
Channel-to-Channel Matching — 1.0 ns typ.
Internal Regulator — 4.7 V on input side
Logic Input Compatibility — TTL / CMOS
Under-Voltage Lockout (UVLO) — Yes
工作接面溫度 — -40 °C to +150 °C

資料表與資源

瀏覽所有產品 建立 BOM 索取報價