2EDL8033G4CXTMA1 vs 2EDL8034G4CXTMA1 比較

詳細並排比較 2EDL8033G4CXTMA1 由 Infineon 與 2EDL8034G4CXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDL8033G4CXTMA1 2EDL8033G4CXTMA1 - 120V Half-Bridge Gate Driver IC | Infineon

2EDL8033G4CXTMA1 - 120V Half-Bridge Gate Driver IC | Infineon

2EDL8033G4CXTMA1 ✓ 啟用中
Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ 啟用中

規格比較

參數 2EDL8033G4CXTMA1 2EDL8034G4CXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side / Low-Side, Non-Inverting Non-Inverting
輸出數量 2 (HS + LS) 2
Source Drive Current 3 A —
Sink Drive Current 4 A —
Bootstrap Voltage (Max) 120 V 120 V
VCC Supply Voltage 10 V to 20 V [DATA_NEEDED: VCC range V]
Logic Input Compatibility 3.3 V / 5 V CMOS / TTL —
Isolation Technology Junction-isolated —
Propagation Delay (Typ) 45 ns —
Channel-to-Channel Matching <10 ns —
Integrated Bootstrap Diode Yes —
工作溫度範圍 -40C to +125C —
封裝 PG-VDSON-10-2 (10-pin VDSON with exposed pad) PG-VDSON-10-2 (DSN-10) with exposed pad
安裝類型 Surface Mount Surface Mount
Marking Code 2ED8033G4C —
RoHS 狀態 Compliant —
Driver Type — Half-Bridge (High-Side / Low-Side)
Peak Source Current — 3 A
Peak Sink Current — 4 A
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
Input Logic Compatibility — 3.3 V / 5 V
UVLO Protection — Yes (VCC and VBS)
Isolation Type — Junction-isolated (level-shifted)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
工作接面溫度 — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)
MSL 等級 — [DATA_NEEDED: MSL level]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價