AFT26HW050GSR3 vs AFT26HW050SR3 比較
詳細並排比較 AFT26HW050GSR3 由 NXP Semiconductors 與 AFT26HW050SR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | AFT26HW050GSR3 | AFT26HW050SR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Part Number | AFT26HW050GSR3 | — |
| Manufacturer | NXP Semiconductors | NXP Semiconductors |
| Device Type | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Family | Airfast RF Power | — |
| 封裝 / 外殼 | NI-780GS-4L4L (9-pin, ceramic) | NI-780-4S4 (Ceramic Air-Cavity) |
| 安裝類型 | Chassis Mount (bolt-down, flange) | Surface Mount (SMD RF Flange) |
| Operating Frequency | 2496 MHz to 2690 MHz | — |
| Typical Drain-Source Voltage (Vds) | 28 V | — |
| Maximum Drain-Source Voltage | 65 V | — |
| Output Power (P1dB / Avg) | 9 W average (Doherty) | — |
| Power Gain (Gp) | 14.2 dB at 2.69 GHz | — |
| Test Condition Gain | 14.2 dB @ 2.69 GHz | — |
| Test Condition Frequency | 2.496 GHz to 2.69 GHz | — |
| Quiescent Current (Iq) | 100 mA | — |
| Configuration | Single transistor, internally input-matched | — |
| Architecture | Asymmetric Doherty (paired carrier/peaking) | — |
| Technology | LDMOS (Laterally Diffused MOS), Airfast gen | — |
| RoHS 狀態 | Compliant | Compliant |
| REACH Status | Compliant | — |
| 工作溫度 | -40 C to +150 C | — |
| Part Family | — | Airfast AFT26HW050S Series |
| Transistor Polarity | — | N-Channel |
| Mode | — | Enhancement Mode |
| Frequency Range | — | 2496 MHz to 2690 MHz |
| Output Power (Average) | — | 9 W (Average) |
| Output Power (Peak) | — | 50 W (Peak) |
| Power Gain (Typical) | — | 14.2 dB |
| Drain Voltage (Operating) | — | 28 V |
| Quiescent Current (Test) | — | 100 mA |
| 拓撲 | — | Asymmetrical Doherty (Main + Peak) |
| Application Band | — | 2.6 GHz TDD-LTE / 5G NR |
| Lead-Free | — | Yes |
| Series | — | Airfast RF Power |