AT45DB041D-SU vs M25P16-VMN3TPB 比較

詳細並排比較 AT45DB041D-SU 由 Renesas Electronics 與 M25P16-VMN3TPB 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Renesas Electronics
AT45DB041D-SU AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU ✓ 啟用中
Micron Technology
M25P16-VMN3TPB M25P16-VMN3TPB - 16Mbit SPI NOR Flash 75MHz | Micron

M25P16-VMN3TPB - 16Mbit SPI NOR Flash 75MHz | Micron

M25P16-VMN3TPB ✓ 啟用中

規格比較

參數 AT45DB041D-SU M25P16-VMN3TPB
品牌 Renesas Electronics Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DataFLASH NOR NOR Flash (Serial SPI)
Memory Format FLASH —
Density 4 Mbit (4,325,376 bits) —
組織 2,048 pages x 264 bytes (binary) or 256 bytes (standard) 2 Mbyte x 8
介面 SPI, RapidS (SPI modes 0 and 3) SPI Serial
最大時脈頻率 66 MHz 75 MHz
供應電壓 2.7 V to 3.6 V 2.7 V to 3.6 V (single supply)
SRAM Data Buffers 2 x 264 bytes —
Page Program Time [DATA_NEEDED: page program time] 0.64 ms typ (256-byte page)
Endurance 100,000 program/erase cycles per page —
Data Retention 20 years minimum —
Security Register 128 bytes —
工作溫度 [DATA_NEEDED: operating temperature range] -40C to +85C
封裝 8-pin SOIC (150 mil, EIAJ) 8-SOIC (3.90 mm width, 150 mil)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
Lead-Free Yes —
記憶體容量 — 16 Mbit (2 M x 8)
Access Time — 15 ns
Sector Erase Time — 0.6 s typ (512 Kbit sector)
Bulk Erase Time — 13 s typ (16 Mbit)
Sector Count — 32 sectors of 64 Kbyte
Write Protection — Advanced write-protection mechanisms
Packaging — Tape & Reel (TPB suffix)

資料表與資源

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