AT45DB041E-SSHN2B-T vs AT45DB041E-SHN2B-T 比較
詳細並排比較 AT45DB041E-SSHN2B-T 由 Renesas Electronics 與 AT45DB041E-SHN2B-T 由 Renesas Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Renesas Electronics
AT45DB041E-SSHN2B-T - 4Mbit SPI DataFlash, 85MHz, 8-SOIC | Renesas
AT45DB041E-SSHN2B-T ✓ 啟用中Renesas Electronics
AT45DB041E-SHN2B-T - 4Mbit 1.65V SPI DataFlash 85MHz | Renesas
AT45DB041E-SHN2B-T ✓ 啟用中規格比較
| 參數 | AT45DB041E-SSHN2B-T | AT45DB041E-SHN2B-T |
|---|---|---|
| 品牌 | Renesas Electronics | Renesas Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Non-volatile Flash (DataFlash / NOR) | NOR Flash (DataFlash, SPI) |
| 記憶體容量 | 4 Mbit (4,194,304 bits) | 4 Mbit (512K x 8) plus 128 kbits extra |
| 組織 | 2,048 pages x 256 bytes (or 264 bytes binary page mode) | 2048 pages x 256 bytes (or 2112 x 264 bytes) |
| 介面類型 | SPI (Modes 0 and 3) / RapidS | SPI (3-wire: SI, SO, SCK + CS) |
| 最大時脈頻率 | 85 MHz | 85 MHz |
| Supply Voltage (Vcc) | 1.65 V to 3.6 V | — |
| 工作溫度 | -40 °C to +85 °C | -40C to +85C (industrial) |
| 封裝 | 8-SOIC (SOIC-N 150 mil) | 8-SOIC (EIAJ 208mil, 5.23 mm body width) |
| 安裝類型 | Surface Mount | Surface Mount |
| Page Size | 256 bytes / 264 bytes | 256 bytes (or 264 bytes binary page mode) |
| SRAM Buffers | 2 x 256/264 bytes (dual buffer) | — |
| Sector / Block Erase | Page erase as small as 256 bytes | — |
| Write Protection | Hardware, Software, and Absolute write protection | — |
| Power-on Reset | Yes (integrated) | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS 狀態 | Compliant | Compliant |
| Supply Voltage (VCC) | — | 1.65 V to 3.6 V |
| SRAM Buffer | — | Dual, 256/264 bytes |
| Packaging | — | Tape & Reel |
| Sector Erase Size | — | 64 KB (4 KB block, 256-byte page erase) |
| Standby Current | — | [DATA_NEEDED: deep power-down typical value] |