BCY79-VII-TIN-LEAD vs BCY79-VII 比較

詳細並排比較 BCY79-VII-TIN-LEAD 由 Central Semiconductor 與 BCY79-VII 由 Central Semiconductor. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Central Semiconductor
BCY79-VII-TIN-LEAD BCY79-VII-TIN-LEAD - PNP 45V 100mA TO-18 BJT | Central Semiconductor

BCY79-VII-TIN-LEAD - PNP 45V 100mA TO-18 BJT | Central Semiconductor

BCY79-VII-TIN-LEAD ✓ 啟用中
Central Semiconductor
BCY79-VII BCY79-VII - PNP 45V 100mA Low Noise TO-18 | Central Semiconductor

BCY79-VII - PNP 45V 100mA Low Noise TO-18 | Central Semiconductor

BCY79-VII ✗ 停產

規格比較

參數 BCY79-VII-TIN-LEAD BCY79-VII
品牌 Central Semiconductor Central Semiconductor
類別 Transistors Transistors
生命週期狀態 啟用中 停產終止
電晶體類型 PNP Bipolar Junction Transistor (BJT), Single Bipolar (BJT), epitaxial planar silicon
Technology Silicon Planar Epitaxial —
集極-基極電壓 (Vcbo) 45 V 45 V
射極-基極電壓 (Vebo) 5.0 V 5 V
集極電流 (Ic) 100 mA —
Power Dissipation 340 mW (derated), 1 W case-related rating per distributor listing —
DC Current Gain Group VII —
封裝 TO-18 metal can, 3-lead TO-18 (TO-206AA), hermetically sealed metal case
安裝類型 Through Hole Through Hole
Finish Tin/Lead (TIN/LEAD) plated leads —
Polarity PNP PNP
Configuration Single transistor Single transistor, 3-pin
Typical Use Low-noise audio amplifier input and driver stages —
Manufacturer Central Semiconductor Corp —
DC Current Gain (hFE) [DATA_NEEDED: hFE min/max for group VII] —
集極-射極電壓 (Vceo) [DATA_NEEDED: VCEO rating] [DATA_NEEDED: VCEO]
工作溫度 [DATA_NEEDED: operating temperature range] —
Maximum Collector Current (IC) — 100 mA
Power Dissipation (PD) — 340 mW
Total Device Dissipation (DigiKey listing) — 1 W
轉換頻率 (ft) — 100 MHz
hFE Gain Group — VII (BCY79 VII/VIII/IX/X binning)
Maximum Operating Temperature — 200 C (junction, per family datasheet)
Application — Low noise amplifier and switching
Lead-Free / RoHS Option — BCY79-VII PBFREE variant available (DigiKey/Mouser)
Series — BCY78 / BCY79 (VII, VIII, IX, X)

資料表與資源

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