BSC009NE2LS5IATMA1 vs IPB020N08N5ATMA1 比較

詳細並排比較 BSC009NE2LS5IATMA1 由 Infineon 與 IPB020N08N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ 啟用中

規格比較

參數 BSC009NE2LS5IATMA1 IPB020N08N5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Part Number BSC009NE2LS5IATMA1 —
Manufacturer Infineon Technologies —
Technology OptiMOS™ 5 (25V/30V family) OptiMOS 5 (N-channel trench MOSFET)
電晶體類型 N-Channel MOSFET —
Configuration Single with built-in diode Single N-channel, 3-pin (2+Tab)
Drain-Source Voltage (V_DS) max 25 V —
Gate-Source Voltage (V_GS) max 20 V —
Gate-Threshold Voltage V_GS(th) typ 1.7 V (range 1.0-2.0 V) —
R_DS(on) max @ V_GS=10V 0.95 mΩ —
Continuous Drain Current (I_D) @ T_A=25°C 40 A —
Continuous Drain Current (I_D) @ T_C=25°C 217 A (pulsed, datasheet rating) —
Power Dissipation (P_D) @ T_A 2.5 W —
Power Dissipation (P_D) @ T_C 74 W —
Total Gate Charge (Q_G) typ 23 nC @ V_GS=0-4.5V —
Input Capacitance (C_iss) typ 3200 pF —
工作溫度範圍 -55°C to +150°C —
封裝 PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TO263-3 (D2PAK-2)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Terminal Finish Matte Tin (e3 per JESD-609) —
Number of Terminals 8 —
RoHS 狀態 Compliant Compliant
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Tc=25C — 120 A
Pulsed Drain Current (IDM) — 480 A
Maximum RDS(on) at VGS=10V — 2.0 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (PD) at Tc=25C — 300 W
工作接面溫度 — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value, approx 0.5 C/W]
Avalanche Energy Rated (EAS) — [DATA_NEEDED: EAS value]

資料表與資源

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