BSC023N08NS5SCATMA1 vs BSC022N04LS6ATMA1 比較
詳細並排比較 BSC023N08NS5SCATMA1 由 Infineon 與 BSC022N04LS6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 ✓ 啟用中
規格比較
| 參數 | BSC023N08NS5SCATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC023N08NS5SCATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS™ 6 (N-channel trench) |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 202 A | — |
| Power Dissipation (PD, Tc=25°C) | 188 W | — |
| On-State Resistance RDS(on) typ. | 2.3 mΩ at VGS=10 V, ID=50 A | — |
| Gate Threshold Voltage VGS(th) typ. | 3.8 V | — |
| Total Gate Charge Qg | 98 nC at VGS=10 V | — |
| Input Capacitance Ciss | 6.8 nF | — |
| Output Capacitance Coss | 74 pF | — |
| Thermal Resistance RthJC | 0.72 K/W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | PG-WSON-8-2 (SuperSO8 DSC) | SuperSO8 5x6 (PG-TDSON-8-1) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Continuous Drain Current (ID) at Ta | — | 27 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Pulsed Drain Current (IDM) | — | 139 A |
| On-Resistance RDS(on) max | — | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 79 W |
| Channel Type | — | N-Channel |
| 腳位數 | — | 8 |
| 工作溫度 | — | -55 C to +175 C (junction) |