BSC0504NSIATMA1 vs BSC021N08NS5ATMA1 比較

詳細並排比較 BSC0504NSIATMA1 由 Infineon 與 BSC021N08NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 ✓ 啟用中

規格比較

參數 BSC0504NSIATMA1 BSC021N08NS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-channel MOSFET —
Drain-to-Source Voltage 30 V —
Continuous Drain Current at Ta 21 A —
Continuous Drain Current at Tc 72 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Technology Family OptiMOS 5 —
封裝 PG-TDSON-8-6 SuperSO8 5x6 (PG-TSON-8-3)
安裝類型 Surface Mount Surface Mount
腳位數 8 pins —
Exposed Pad Yes, according to distributor package description —
On-State Resistance [DATA_NEEDED: on-state resistance] —
Gate Charge [DATA_NEEDED: gate charge] —
閘極臨界電壓 [DATA_NEEDED: gate threshold voltage] —
熱阻 [DATA_NEEDED: thermal resistance] —
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification] —
RoHS 狀態 unknown Compliant (Pb-free)
Lead-Free Status unknown —
Halogen-Free Status unknown —
REACH Status unknown —
Manufacturer — Infineon Technologies
Part Number — BSC021N08NS5ATMA1
Technology — OptiMOS 5 (N-channel trench)
Drain-Source Voltage (V_DS max) — 80 V
Continuous Drain Current (I_D, Tc=25°C) — 226 A
Continuous Drain Current (I_D, Tc=100°C) — 100 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max (V_GS=10 V) — 2.1 mΩ
Gate-Source Voltage V_GS max — ±20 V
Power Dissipation P_D (Tc=25°C) — 214 W
工作接面溫度 — -55 °C to +175 °C
Total Gate Charge Q_G typ — [DATA_NEEDED: total gate charge]
R_thJC thermal resistance max — [DATA_NEEDED: R_thJC]
MSL 等級 — MSL 1 (per JEDEC J-STD-020)
Avalanche Energy Rated — Yes (single-pulse)
Delivery Form — Tape & Reel (T&R)

資料表與資源

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